SKSHC0603L-100M
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Shikues Semiconductor
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Wire Wound SMD Power Inductors with magnetic shield, high current, low DC resistance, composite structure, ultra-low noise, good weldability, high heat resistance. |
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EC31QS03L
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode in SMB/DO-214AA package with 30V repetitive peak reverse voltage, 3.0A average rectified output current, low forward voltage drop of 0.45V, and operating junction temperature range from -40 to +150°C. |
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FR103L
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Shenzhen Heketai Electronics Co Ltd
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Fast recovery diode in SOD-123FL package with repetitive peak reverse voltage from 50V to 1000V, low forward voltage of 1.3V at 1.0A, reverse recovery time of 250ns, and junction capacitance measured at 1MHz. |
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IP403LF
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IC Plus Corp
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56-output serial-to-parallel LED driver and 52 GPIO controller with adjustable current output from 4 to 16mA, supporting single or triple serial input modes, programmable de-bounce time, interrupt capability, and 3.3V or 1.8V logic levels in a 68-pin QFN package. |
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EC10QS03L
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode EC10QS03L with 30V repetitive peak reverse voltage, 1.0A average rectified forward current, low forward voltage drop, and operating junction temperature from -40 to +150°C. |
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CESD0603LC5VB-M
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CREATEK Microelectronics
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Low capacitance ESD protection diode in DFN0603 package, featuring 40W peak pulse power, 2.7pF typical junction capacitance, bidirectional configuration, and protection compliant with IEC 61000-4-2, IEC 61000-4-4, and IEC 61000-4-5 standards. |
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VSA030C03LD
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VANGUARD
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30V N+P channel enhancement mode MOSFET in DFN2x3-8L package with low on-resistance of 40 mΩ (N) and 77 mΩ (P) at VGS=±2.5V, suitable for high efficiency power switching applications. |
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VSE008N03LS
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VANGUARD
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30V/42A N-Channel Advanced Power MOSFET with 10 mΩ RDS(on) at VGS=10V, available in PDFN3333 package, featuring low on-resistance, fast switching, and avalanche ruggedness. |
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JEB03LCDF
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Jiangsu JieJie Microelectronics Co Ltd
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Ultra-low capacitance bidirectional TVS diode array JEB03LCDF for ESD protection, 3.3V operating voltage, 0.15pF typical capacitance, designed to protect high-speed data lines in USB, display port, and wireless communication applications. |
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NTD25P03LG
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VBsemi Electronics Co Ltd
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P-Channel 30V MOSFET with 0.033 ohm RDS(on) at VGS = -10V, 26A continuous drain current, 19nC gate charge, in TO-252 package, RoHS compliant and halogen-free. |
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RR1608(0603)LR010FT
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SUP
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Thick Film Chip Resistor (RR) in sizes from 01005 to 2512, with power ratings up to 3W, operating voltage up to 500V, resistance range from 0Ω to 100MΩ, and TCR down to ±50PPM/℃. |
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CBM803LSC3
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COREBAI
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Supervisory circuit with precision supply voltage monitoring, 17uA quiescent current, reset assertion down to 1V VCC, and 140ms minimum power-on reset; available in open-drain or push-pull output configurations. |
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SKSHC0603L-100M
