-020N Search Results
-020N Datasheets (8)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
AKP020N85
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AK Semiconductor | AKP020N85 N-Channel Super Trench II Power MOSFET with 85V VDS, 300A ID, 1.8mΩ RDS(on) (TO-220), 1.6mΩ RDS(on) (TO-263), 245nC total gate charge, suitable for high-frequency switching and synchronous rectification. | Original | ||||
RSR020N06TL
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VBsemi Electronics Co Ltd | N-Channel 60-V MOSFET in SOT23 package with RDS(on) of 85 mOhm at VGS = 10 V, continuous drain current of 4 A, and low gate charge of 2.1 nC, suitable for battery switches and DC/DC converters. | Original | ||||
JX020N2
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Jiangsu JieJie Microelectronics Co Ltd | 2A Sensitive SCR with 600V repetitive peak off-state and reverse voltage, high dV/dt capability, IGT ≤200uA, in SOT-89-2L RoHS-compliant package. | Original | ||||
MUR1020NS
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Microdiode Semiconductor (MDD) | VRRMS 140 V, VDC 200 V, I(AV) 10.0A, IFSM 120 A, VF 1.2 V, CJ 85pF, RθJA 50°C/W, Trr 35 ns, TJ,TSTG -55 to +150°C. | Original | ||||
NCEAP020N10LL
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NCEPOWER | NCE AP020N10LL is an Automotive N-Channel Super Trench II Power MOSFET with 100 V drain-source voltage, 330 A continuous drain current, 1.5 mΩ typical RDS(on) at VGS = 10 V, and 175 °C maximum operating temperature. | Original | ||||
HSBL020N08
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Huashuo Semiconductor | HSBL020N08 is an N-channel 80V fast switching MOSFET with a typical RDS(ON) of 1.4 mΩ, continuous drain current up to 240A, low gate charge, and advanced trench technology for high efficiency in synchronous rectification applications. | Original | ||||
IRC3020N13-B20
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CT Micro International Corporation | SMD type 940nm infrared emitter with GaAlAs LED, peak wavelength at 940nm, radiant intensity of 1.8 mW/sr at 20mA, viewing angle ±60 degrees, and RoHS compliant. | Original | ||||
NCEAP020N85LL
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NCEPOWER | NCE AP020N85LL is an N-channel Super Trench II Power MOSFET with 85 V drain-source voltage, 295 A continuous drain current, 1.6 mΩ typical RDS(on) at 10 V VGS, and 175 °C maximum operating temperature, suitable for high-frequency switching and synchronous rectification applications. | Original |
-020N Price and Stock
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Tai-Tech Advanced Electronics Co Ltd HPC-5020NV-2R2MFIXED IND 2.2UH 2.8A 32 MOHM SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HPC-5020NV-2R2M | Digi-Reel | 4,760 | 1 |
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| HPC-5020NV-2R2M | Cut Tape | 4,760 | 1 |
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| HPC-5020NV-2R2M | Tape & Reel | 2,500 | 2,500 |
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Littelfuse Inc 0891020.NXWSFUSE AUTO 20A 58VDC BLADE MINI |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
0891020.NXWS | Bulk | 2,320 | 1 |
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Pulse Electronics Corporation HX5020NLMODULE DUAL GIGABIT ETHENET 50P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HX5020NL | Tube | 1,567 | 1 |
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HX5020NL | Bulk | 297 | 1 |
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HX5020NL | 19 Weeks | 300 |
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HX5020NL | 8 Weeks, 1 Days | 300 |
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|
HX5020NL | 240 |
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HX5020NL | 8,116 |
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HX5020NL | 1,535 |
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onsemi NVMFD020N06CT1GMOSFET 2N-CH 60V 8A 8DFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVMFD020N06CT1G | Digi-Reel | 1,500 | 1 |
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NVMFD020N06CT1G | 1,290 | 1 |
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NVMFD020N06CT1G | 11,570 |
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NVMFD020N06CT1G | 42 Weeks | 1,500 |
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NVMFD020N06CT1G | 7,500 |
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NVMFD020N06CT1G |
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NVMFD020N06CT1G | 5,670 | 1 |
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onsemi NTMFD020N06CT1GMOSFET 2N-CH 60V 8A 8DFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTMFD020N06CT1G | Digi-Reel | 1,064 | 1 |
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| NTMFD020N06CT1G | Cut Tape | 1,064 | 1 |
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NTMFD020N06CT1G | 5,405 | 1 |
|
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NTMFD020N06CT1G | 44 Weeks | 1,500 |
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NTMFD020N06CT1G | 45 Weeks | 1,500 |
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NTMFD020N06CT1G | 19,451 |
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NTMFD020N06CT1G |
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