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    -020N Search Results

    -020N Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge JX020N2
    Jiangsu JieJie Microelectronics Co Ltd 2A Sensitive SCR with 600V repetitive peak off-state and reverse voltage, high dV/dt capability, IGT ≤200uA, in SOT-89-2L RoHS-compliant package. Original PDF
    badge AKP020N85
    AK Semiconductor AKP020N85 N-Channel Super Trench II Power MOSFET with 85V VDS, 300A ID, 1.8mΩ RDS(on) (TO-220), 1.6mΩ RDS(on) (TO-263), 245nC total gate charge, suitable for high-frequency switching and synchronous rectification. Original PDF
    badge RSR020N06TL
    VBsemi Electronics Co Ltd N-Channel 60-V MOSFET in SOT23 package with RDS(on) of 85 mOhm at VGS = 10 V, continuous drain current of 4 A, and low gate charge of 2.1 nC, suitable for battery switches and DC/DC converters. Original PDF
    badge MUR1020NS
    Microdiode Semiconductor (MDD) VRRMS 140 V, VDC 200 V, I(AV) 10.0A, IFSM 120 A, VF 1.2 V, CJ 85pF, RθJA 50°C/W, Trr 35 ns, TJ,TSTG -55 to +150°C. Original PDF
    badge IRC3020N13-B20
    CT Micro International Corporation SMD type 940nm infrared emitter with GaAlAs LED, peak wavelength at 940nm, radiant intensity of 1.8 mW/sr at 20mA, viewing angle ±60 degrees, and RoHS compliant. Original PDF
    badge NCEAP020N10LL
    NCEPOWER NCE AP020N10LL is an Automotive N-Channel Super Trench II Power MOSFET with 100 V drain-source voltage, 330 A continuous drain current, 1.5 mΩ typical RDS(on) at VGS = 10 V, and 175 °C maximum operating temperature. Original PDF
    badge HSBL020N08
    Huashuo Semiconductor HSBL020N08 is an N-channel 80V fast switching MOSFET with a typical RDS(ON) of 1.4 mΩ, continuous drain current up to 240A, low gate charge, and advanced trench technology for high efficiency in synchronous rectification applications. Original PDF
    badge NCEAP020N85LL
    NCEPOWER NCE AP020N85LL is an N-channel Super Trench II Power MOSFET with 85 V drain-source voltage, 295 A continuous drain current, 1.6 mΩ typical RDS(on) at 10 V VGS, and 175 °C maximum operating temperature, suitable for high-frequency switching and synchronous rectification applications. Original PDF
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    -020N Price and Stock

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    Infineon Technologies AG IPB020NE7N3GATMA1

    MOSFET N-CH 75V 120A D2PAK
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    DigiKey IPB020NE7N3GATMA1 Cut Tape 11,190 1
    • 1 $6.55
    • 10 $4.39
    • 100 $3.17
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    Rochester Electronics IPB020NE7N3GATMA1 2,268 1
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    • 1000 $2.15
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    NexGen Digital IPB020NE7N3GATMA1 830
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    EBV Elektronik IPB020NE7N3GATMA1 9 Weeks 1,000
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    Vyrian IPB020NE7N3GATMA1 4,860
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    Infineon Technologies AG IQD020N10NM5CGATMA1

    OPTIMOS 6 POWER-TRANSISTOR
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    DigiKey () IQD020N10NM5CGATMA1 Cut Tape 4,791 1
    • 1 $6.37
    • 10 $4.26
    • 100 $3.07
    • 1000 $2.83
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    IQD020N10NM5CGATMA1 Tape & Reel 4,791 5,000
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    IQD020N10NM5CGATMA1 Digi-Reel 4,791 1
    • 1 $6.37
    • 10 $4.26
    • 100 $3.07
    • 1000 $2.83
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    Avnet Americas IQD020N10NM5CGATMA1 Tape & Reel 5,000 52 Weeks 5,000
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    Newark () IQD020N10NM5CGATMA1 Tape & Reel 4,300 100
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    • 1000 $2.81
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    IQD020N10NM5CGATMA1 Cut Tape 4,300 1
    • 1 $4.75
    • 10 $4.75
    • 100 $2.96
    • 1000 $2.81
    • 10000 $2.70
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    Rochester Electronics IQD020N10NM5CGATMA1 3,610 1
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    EBV Elektronik IQD020N10NM5CGATMA1 53 Weeks 5,000
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    KORATECH 020N0200B07441010N0001

    20N*200mm*1.0P*(4/4/10/10)*P7
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    DigiKey 020N0200B07441010N0001 Bulk 500 10
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    KORATECH 020N0120A07440808N0001

    20N*120mm*0.5P*(4/4/8/8)*P7
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    DigiKey 020N0120A07440808N0001 Bulk 500 10
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    KORATECH 020N0060A07440808N0004

    20N*60mm*0.5P*(4/4/8/8)*P7
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    DigiKey 020N0060A07440808N0004 Bulk 500 10
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