JX020N2
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Jiangsu JieJie Microelectronics Co Ltd
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2A Sensitive SCR with 600V repetitive peak off-state and reverse voltage, high dV/dt capability, IGT ≤200uA, in SOT-89-2L RoHS-compliant package. |
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AKP020N85
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AK Semiconductor
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AKP020N85 N-Channel Super Trench II Power MOSFET with 85V VDS, 300A ID, 1.8mΩ RDS(on) (TO-220), 1.6mΩ RDS(on) (TO-263), 245nC total gate charge, suitable for high-frequency switching and synchronous rectification. |
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RSR020N06TL
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VBsemi Electronics Co Ltd
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N-Channel 60-V MOSFET in SOT23 package with RDS(on) of 85 mOhm at VGS = 10 V, continuous drain current of 4 A, and low gate charge of 2.1 nC, suitable for battery switches and DC/DC converters. |
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MUR1020NS
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Microdiode Semiconductor (MDD)
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VRRMS 140 V, VDC 200 V, I(AV) 10.0A, IFSM 120 A, VF 1.2 V, CJ 85pF, RθJA 50°C/W, Trr 35 ns, TJ,TSTG -55 to +150°C. |
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NCEAP020N10LL
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NCEPOWER
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NCE AP020N10LL is an Automotive N-Channel Super Trench II Power MOSFET with 100 V drain-source voltage, 330 A continuous drain current, 1.5 mΩ typical RDS(on) at VGS = 10 V, and 175 °C maximum operating temperature. |
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IRC3020N13-B20
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CT Micro International Corporation
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SMD type 940nm infrared emitter with GaAlAs LED, peak wavelength at 940nm, radiant intensity of 1.8 mW/sr at 20mA, viewing angle ±60 degrees, and RoHS compliant. |
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HSBL020N08
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Huashuo Semiconductor
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HSBL020N08 is an N-channel 80V fast switching MOSFET with a typical RDS(ON) of 1.4 mΩ, continuous drain current up to 240A, low gate charge, and advanced trench technology for high efficiency in synchronous rectification applications. |
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NCEAP020N85LL
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NCEPOWER
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NCE AP020N85LL is an N-channel Super Trench II Power MOSFET with 85 V drain-source voltage, 295 A continuous drain current, 1.6 mΩ typical RDS(on) at 10 V VGS, and 175 °C maximum operating temperature, suitable for high-frequency switching and synchronous rectification applications. |
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JX020N2
