|
02P-LEBSS-TF(LF)(SN)
|
|
JST Manufacturing
|
Solid State Lighting Connectors, Connectors, Interconnects, CONN PLUG HEADER 2POS SMD |
Original |
PDF
|
|
3 |
|
02P-MWPV-SSR
|
|
JST Manufacturing
|
Connector Accessories Plug Housing For Pin Contacts 2POS PBT White |
Original |
PDF
|
80.12KB |
2 |
DQ96402P G
|
|
JWD
|
2.5/5G Base-T quad port magnetic module with isolation, RoHS compliance, 1500V hipot rating, and PoE options up to 75W, designed for Ethernet applications per IEEE 802.3bz standard. |
Original |
PDF
|
|
|
|
NTR4502P
|
|
Shikues Semiconductor
|
P-Channel MOSFET, -20V/-3A, RDS(ON)=120mΩ@VGS=-4.5V, SOT-23, Power Management, Portable Equipment. |
Original |
PDF
|
|
|
|
AW13102PSTR
|
|
Shanghai Awinic Technology
|
0.1-3.0GHz SPDT Switch |
Original |
PDF
|
|
|
|
DG96502PT G
|
|
JWD
|
Quad port 100/1000 Base-T magnetic module with isolation, RoHS compliant, supporting PoE up to 120W, operating temperature from -40 to 85°C, designed for Ethernet applications per IEEE 802.3 standard. |
Original |
PDF
|
|
|
|
SK02P03
|
|
Shikues Semiconductor
|
30V P-Channel MOSFET, RDS(ON)=100mΩ@VGS=-10V, 140mΩ@VGS=-4.5V, Power Management in Portable Equipment. |
Original |
PDF
|
|
|
|
FDN302P
|
|
VBsemi Electronics Co Ltd
|
P-Channel 20V -5A MOSFET in SOT-23 package with RDS(on) of 35 mOhm at VGS = -10V, featuring trench technology and suitable for load switches, PA switches, and DC/DC converters. |
Original |
PDF
|
|
|
|
NCE02P20K
|
|
NCEPOWER
|
NCE02P20K is a -200V, -20A trench technology power MOSFET with RDS(ON) less than 200mΩ at VGS=-10V, designed for high-density applications requiring low on-resistance and low gate charge. |
Original |
PDF
|
|
|
|
M88DR4RCD02P
|
|
Montage Technology
|
M88DR4RCD02P是澜起科技推出的Gen2 Plus DDR4寄存时钟驱动器（RCD）芯片。该芯片符合JEDEC DDR4RCD02标准，最高支持速率DDR4-3200，可应用于RDIMM 和LRDIMM。此外，该芯片还支持NVDIMM（非易失性双列直插内存模组）模式，为计算机内存体系增加了新层级的功能，使高端数据中心服务器能充分利用非易失性内存的数据持久性优势和DRAM内存颗粒的高速存取优势，实现DRAM速率级的非易失性内存访问。注：此处以 DDR4 RDIMM 为例，展示了RCD芯片在内存模组上的应用示意图。符合JEDEC DDR4RCD02标准最高支持速率DDR4-3200支持NVDIMM（非易失性双列直插内存模组）模式支持32位1:2的地址和控制信号的寄存缓冲内部集成PLL时钟驱动模块，输出5对差分时钟信号支持1.2 V VDD电压支持2或4个片选信号支持命令和地址输入信号的奇偶校验输出信号的特性可通过寄存器配置支持I²C接口支持多种节电模式，如S3低功耗模式、CK STOP模式等超低功耗绿色封装：FBGA (Fine-pitch Ball Grid Array)DDR4 RDIMM, LRDIMM 和 NVDIMM |
Original |
PDF
|
|
|
|
JMSH0702PE
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
70V, 230A, 1.8mΩ N-channel Power SGT MOSFET in TO-263-3L package with low gate charge, 100% UIS tested, suitable for load switch, PWM, and power management applications. |
Original |
PDF
|
|
|
|
HSBB02P15
|
|
Huashuo Semiconductor
|
P-Ch 150V Fast Switching MOSFET with -2A continuous drain current, 780 mΩ RDS(ON), low gate charge, and high cell density trench technology for synchronous buck converters. |
Original |
PDF
|
|
|
|
M88DR4DB02P/M88NR4DB02P
|
|
Montage Technology
|
M88DR4DB02P/M88NR4DB02P是一款Gen2 Plus DDR4数据缓冲器（DB）芯片，符合JEDEC DDR4DB02标准，最高支持速率DDR4-3200。该DB芯片可与澜起的M88DR4RCD02P（RCD）芯片组成套片，用于DDR4 LRDIMM或NVDIMM（非易失性双列直插内存模组）。每个DDR4 LRDIMM可采用1 * RCD + 9 * M88DR4DB02P，而每个DDR4 NVDIMM可采用1 * RCD + 9 * M88NR4DB02P。注：此处以 DDR4 LRDIMM 为例，展示了 DB 芯片在内存模组上的应用示意图。符合JEDEC DDR4DB02标准最高支持速率DDR4-3200M88NR4DB02P支持NVDIMM（非易失性双列直插内存模组）模式支持DDR4数据 (DQ) 信号双向重定时和1: 1再驱动支持通过输入时钟重新生成数据控制 (DQS) 信号DQ通路内置FIFO，支持总线接口时域和DRAM接口时域解耦支持最多四个pakcage rank总线接口支持package rank定时校准仅支持4位DRAM支持1.2 V VDD电压BCOM接口支持奇偶校验错误和顺序错误检测支持多种节电模式，如CKE低功耗模式、CK STOP模式等绿色封装: FBGA (Fine-pitch Ball Grid Array)M88DR4DB02P 应用于 DDR4 LRDIMMM88NR4DB02P 应用于 DDR4 NVDIMM |
Original |
PDF
|
|
|
|
SG48002P G
|
|
JWD
|
Dual-port 100/1000 Base-T SMD magnetic module with isolation, RoHS compliant, supports IEEE 802.3 standards, operating temperature from -40 to 85°C, available with PoE ratings up to 90W. |
Original |
PDF
|
|
|
|
|
|
NTR4502PT1G
|
|
VBsemi Electronics Co Ltd
|
P-Channel 30 V TrenchFET MOSFET in SOT-23 package with -5.6 A continuous drain current, 0.046 ohm typical RDS(on) at VGS = -10 V, and 11.4 nC gate charge, suitable for load switches and DC/DC converters. |
Original |
PDF
|
|
|
|
FDC602P
|
|
VBsemi Electronics Co Ltd
|
P-Channel 30-V, 4.8-A, 0.049-ohm MOSFET in TSOP-6 package, designed for load switch applications with low on-resistance and fast switching characteristics. |
Original |
PDF
|
|
|
|
DG24102PT G
|
|
JWD
|
Single port magnetic module for 100/1000 Base-T Ethernet applications, featuring 350 uH inductance, 1500 V isolation, RoHS compliance, and support for PoE or non-PoE configurations with operating temperature from 0 to 70 °C. |
Original |
PDF
|
|
|
|
JMSL0302PG
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
30V, 199A, 1.9mΩ N-channel Power SGT MOSFET in PDFN5x6-8L package with low gate charge, 100% UIS tested, suitable for load switch and power management applications. |
Original |
PDF
|
|
|
|
ESDA1202P3
|
|
Leiditech
|
ESDA1202P3 is a low capacitance TVS diode array with 12V operating voltage, ultra low leakage in nA range, designed for ESD protection in high-speed interfaces, featuring 17V clamping voltage at 1A and compliant with IEC 61000-4-2 ±15kV air discharge standard. |
Original |
PDF
|
|
|
|
ESDA3302P3
|
|
Leiditech
|
ESDA3302P3 is a low capacitance TVS diode array with 3.3V operating voltage, ultra low leakage in nA range, 8.5V clamping voltage at 1A, and 5pF typical capacitance, designed for ESD protection in high-speed data lines. |
Original |
PDF
|
|
|
DQ96402P G
