JMSH0402AEQ
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Jiangsu JieJie Microelectronics Co Ltd
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40V N-channel Power MOSFET in TO-263-3L package with 1.3 mΩ RDS(ON) at 10V VGS, 253A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSH0602AE
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET with 1.8 mΩ typical RDS(ON) at 10 V VGS, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, 195 A maximum drain current, and 100% UIS tested reliability. |
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KTH1702AE-ST3
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Quanzhou KTsense Microelectronics Co..Ltd
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高性能、低功耗、全极磁场检测霍尔开关传感器 |
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JMSH1002AEQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 350A, 1.6mΩ N-channel Power MOSFET in TO-263-3L package, featuring low gate charge, ultra-low on-resistance, and AEC-Q101 qualification for automotive applications. |
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JMSH1002AE
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET with 1.6 mW typical RDS(ON) at VGS = 10V, 271A maximum continuous drain current, available in TO-220-3L and TO-263-3L packages, suitable for power management and motor driving applications. |
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JMSH0602AEQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V 2.0mΩ N-Ch Power MOSFET in TO-263-3L package, with 224A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSH0402AEQ
