JMSL0601AG
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in PDFN5x6-8L package with 0.90 mΩ typical RDS(ON) at 10V VGS, 275A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications. |
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AP4501AGM
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VBsemi Electronics Co Ltd
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N- and P-channel 30 V MOSFET in SO-8 package, featuring trench technology, 100% Rg and UIS tested, with low on-resistance down to 0.018 ohms for N-channel and 0.032 ohms for P-channel, suitable for motor drive and mobile power bank applications. |
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JMSH0601AG
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Jiangsu JieJie Microelectronics Co Ltd
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60V 1.4mΩ N-Ch Power MOSFET in PDFN5x6-8L package, with 197A continuous drain current, low gate charge, and 100% UIS tested, suitable for power management and switching applications. |
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JMSH0401AG
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Jiangsu JieJie Microelectronics Co Ltd
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40V 1.3mΩ N-Ch Power MOSFET in PDFN5x6-8L package, with 190A continuous drain current, low gate charge, and ultra-low on-resistance, suitable for power management and switching applications. |
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JMSL0601AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-Ch Power MOSFET in PDFN5x6-8L package with 0.90 mΩ RDS(ON) at VGS = 10V, 315 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSH0601AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-Ch Power MOSFET in PDFN5x6-8L package with 1.3 mΩ typical RDS(ON) at 10 V VGS, 225 A continuous drain current, and 81 nC total gate charge, suitable for automotive applications. |
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JMSL0301AGND
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Jiangsu JieJie Microelectronics Co Ltd
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30V Dual Asymmetric N-Ch Power MOSFET in DFN5060-8L-B package with RDS(ON) of 3.4 mΩ and 0.90 mΩ, continuous drain current of 64A and 173A, and thermal resistance RθJA of 35°C/W and 45°C/W. |
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JMSL0601AG
