AD-CJ13-320001010D05
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JCET Group
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SMD3225 32MHz quartz crystal resonator with 10pF load capacitance, ±10ppm frequency tolerance, ±100ppm temperature stability, fundamental mode, AEC-Q200 qualified, operating temperature -40 to +125°C. |
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G1010DS
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AK Semiconductor
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Surface mount silicon rectifier in TO-252 package with reverse voltage ratings from 100 to 1000 V, 10 A forward current, low forward voltage drop, glass passivated junction, and operating temperature up to 150 °C. |
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JMTQ3010D
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 22A dual N-channel enhancement mode power MOSFET in PDFN3x3-8L-D package with RDS(ON) less than 13.5mΩ at VGS=10V and low gate charge, suitable for load switching, PWM, and power management applications. |
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MSK4010D
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Shikues Semiconductor
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Schottky Barrier Diodes, AEC-Q101 Qualified, RoHS compliant, SOD-882 package. |
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GPI65010DF56
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GaNPower
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N-channel 650V 10A GaN Power HEMT in 5x6 DFN package with 120 mΩ RDS(on), 2.6 nC gate charge, and zero reverse recovery charge, designed for high-frequency switching applications requiring high power density and efficiency. |
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JMTP3010D
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Jiangsu JieJie Microelectronics Co Ltd
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Dual N-channel enhancement mode power MOSFET in SOP-8 package, 30V, 12A, with RDS(ON) less than 11.6mΩ at VGS=10V and low gate charge, suitable for load switch, PWM, and power management applications. |
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US1010DS
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AK Semiconductor
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Surface mount ultrafast recovery rectifier in TO-252 package with reverse voltage ratings from 100V to 1000V, 10A forward current, low forward voltage drop, and 50 to 75ns reverse recovery time.Surface Mount Ultrafast Recovery Rectifier in TO-252(D-PAK), 10A forward current, 100 to 1000V reverse voltage, 50-75ns reverse recovery time, low forward voltage drop, high surge capability, lead-free.Surface Mount Ultrafast Recovery Rectifier in TO-252(D-PAK), 100 to 1000V reverse voltage, 10A forward current, 50-75ns reverse recovery time, 0.95-1.65V forward voltage at 10A, -55 to +150°C operating temperature. |
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