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01P-LEBSS-TF(LF)(SN)
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JST Manufacturing
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Solid State Lighting Connectors, Connectors, Interconnects, CONN PLUG HEADER 1POS SMD |
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3 |
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01P-LELSS-GA-TF(HF)
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JST Manufacturing
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Solid State Lighting Connectors, Connectors, Interconnects, CONN PLUG 1POS SMT GOLD |
Original |
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2 |
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01P-MWPV-SSR
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JST Manufacturing
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Connector Accessories Plug Housing For Pin Contacts 1POS PBT White |
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80.12KB |
2 |
ESD0701P3
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Leiditech
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ESD0701P3 is a 5500W peak pulse power TVS diode in DFN2020-3 package, featuring 7V working voltage, low leakage current, ultra-low clamping voltage, and protection for one power line, compliant with IEC61000-4-2 and IEC61000-4-5 standards. |
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SD1501P4-3
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Leiditech
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SD1501P4-3 is a 1-line high power TVS diode in DFN2020-3 package, with 15V operating voltage, 6500W peak pulse power (8/20µs), low leakage current, and ultra-low clamping voltage for power management and industrial applications. |
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SDA0801P
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Leiditech
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200W unidirectional TVS diode in DFN1006 package with 8V working voltage, low clamping voltage, 13.3V peak pulse voltage at 1A, 11pF typical capacitance, and ±30kV ESD protection for signal line protection in portable electronics. |
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SDA3601P
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Leiditech
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Unidirectional TVS diode in DFN1006 package, 200W peak pulse power (8/20µs), 36V working voltage, 40V breakdown voltage, 60V clamping voltage at 1A, low leakage current, ESD protection up to ±15kV air and ±8kV contact. |
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SDA2401P
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Leiditech
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200W unidirectional TVS diode in DFN1006 package, with 24V working voltage, 26.7V breakdown voltage, 36V clamping voltage at 1A, low leakage current, and ESD protection up to ±15kV air, ±8kV contact. |
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SD1201P4-3
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Leiditech
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SD1201P4-3 is a 5400W peak pulse power TVS diode in DFN2020-3 package, featuring 12V operating voltage, low leakage current, ultra-low clamping voltage, and compliance with IEC61000-4-2, -4-4, and -4-5 standards. |
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ESD1501P3
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Leiditech
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ESD1501P3 is a 1-line high power TVS diode in DFN2020-3 package, featuring 6000W peak pulse power (8/20µs), 15V operating voltage, low leakage current, ultra low clamping voltage, and compliance with IEC61000-4-2 and IEC61000-4-5 standards. |
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SD2401P4-3
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Leiditech
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SD2401P4-3 is a 1-line high power TVS diode in DFN2020-3 package, featuring 4000W peak pulse power, 24V operating voltage, low leakage current, ultra low clamping voltage, and compliance with IEC61000-4-2, -4-4, and -4-5 standards. |
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AK01P30
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AK Semiconductor
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AK01P30 P-Channel Enhancement Mode Power MOSFET with -100V drain-source voltage, -30A continuous drain current, 58mΩ maximum RDS(ON) at VGS=-10V, advanced trench technology, and TO-220-3L package. |
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SDA0501P
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Leiditech
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SDA0501P is a unidirectional TVS diode in DFN1006 package with 5V operating voltage, ultra-low leakage in nA range, 8V clamping voltage at 1A, and peak pulse power of 25W, suitable for ESD protection in USB, Ethernet, and digital interfaces. |
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AK01P18D
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AK Semiconductor
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AK01P18D P-Channel Enhancement Mode Power MOSFET with -100V drain-source voltage, -18A continuous drain current, and 85mΩ typical RDS(ON) at VGS=-10V, utilizing advanced trench technology for low on-resistance and high cell density. |
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ESD0801PB
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Microdiode Semiconductor
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Portable Electronics, Desktops, Servers, Notebooks, Cellular Phones, MP3 Ports; DFN1006; UL 94V-0; Tape and Reel; IEC61000-4-2 ±15kV (air), ±8kV (contact); transient protection; low clamping voltage. |
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AK01P30L
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK01P30L with -100V drain-source voltage, -30A continuous drain current, 58mΩ maximum RDS(ON) at VGS=-10V, advanced trench technology, and TO-251S package. |
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NCE01P13I
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NCEPOWER
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NCE01P13I is a -100V, -13A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 170 mΩ at VGS = -10V and low gate charge, suitable for power switching and DC/DC converter applications. |
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SDA1501P
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Leiditech
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Unidirectional TVS diode in DFN1006 package, 200W peak pulse power (8/20µs), 15V working voltage, 16.6V breakdown voltage, 21.5V clamping voltage at 1A, 6uA max leakage current, protects one I/O line, ESD protection up to ±30kV. |
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SD1801P4-3
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Leiditech
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SD1801P4-3 is a 1-line high power TVS diode in DFN2020-3 package with 6400W peak pulse power, 18V operating voltage, low leakage current, and ultralow clamping voltage for power management and industrial applications. |
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SG24Z01PT G
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JWD
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SG24Z01PT G single port magnetic module for 100/1000 Base-T Ethernet, SMD type, with 180 uH inductance, 1500 V isolation, 4PPoE 200W support, operating temperature -40 to 85 C, compliant with IEEE 802.3 and RoHS standards. |
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