AK01H13WD
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK01H13WD with 100V drain-source voltage, 130A continuous drain current, and low on-resistance of 5.2mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. |
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AK01H11
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK01H11 with 100V drain-source voltage, 110A continuous drain current, and 7.5mΩ typical RDS(ON) at 10V VGS, featuring advanced trench technology for low gate charge and high switching efficiency. |
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AK01H14D
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AK Semiconductor
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AK01H14D N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 140A continuous drain current, RDS(ON) less than 5.5mΩ at VGS=10V, and high ESD capability in a TO-263-2L package. |
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AK01H10
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AK Semiconductor
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AK01H10 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 100A continuous drain current, and 13mΩ maximum RDS(ON) at 10V VGS, featuring high ESD capability and optimized for power switching applications. |
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AK01H13D
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AK Semiconductor
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AK01H13D N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and 6.8mΩ typical RDS(ON) at 10V VGS, designed for high-frequency switching and power applications. |
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NCE01H11
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NCEPOWER
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NCE01H11 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 110A continuous drain current, 6.8mΩ typical RDS(ON) at VGS=10V, and advanced trench technology for low gate charge and high efficiency in power switching applications. |
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AK01H14C
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK01H14C with 100V drain-source voltage, 140A continuous drain current, RDS(ON) less than 6.0mΩ at VGS=10V, advanced trench technology, low gate charge, and high ESD capability. |
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NCE01H13D
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NCEPOWER
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NCE01H13D is an N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and low on-resistance of 5.3mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. |
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AW93001HDNR
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Shanghai Awinic Technology
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A Low Power One-key Capacitor Touch Sensor |
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AK01H21TC
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 100V VDSS, 210A ID, and 3.3mΩ typical RDS(ON) at VGS=10V, utilizing trench technology for low on-resistance and high efficiency in power switching applications. |
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AK01H13
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and low on-resistance of 5.3mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. |
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AK01H29T
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK01H29T with 100V VDSS, 290A ID, and RDS(ON) of 2.4mΩ typical at VGS=10V, featuring high density cell design for low on-resistance and optimized performance in power switching applications. |
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AD-MMBT5401-H
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JCET Group
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PNP plastic-encapsulated transistor in SOT-23 package, with collector-base voltage of -160 V, collector-emitter voltage of -150 V, continuous collector current of -0.6 A, and power dissipation of 0.3 W, suitable for medium power amplification and switching. |
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NCE01H10
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NCEPOWER
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NCE01H10 is an N-channel enhancement mode power MOSFET with 100V drain-source voltage, 100A continuous drain current, and ultralow RDS(ON) of 9.9mΩ typical at VGS=10V, designed for high-efficiency power switching applications. |
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AK01H10D
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 100A continuous drain current, and 9.9mΩ typical RDS(ON) at 10V VGS, featuring high ESD capability and low gate charge in a TO-263-2L package. |
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AK01H14T
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK01H14T with 100V drain-source voltage, 140A continuous drain current, and 4.5mΩ typical RDS(ON) at 10V VGS, designed for high-frequency switching and power applications. |
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AK01H21T
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK01H21T with 100V VDS, 210A ID, and RDS(ON) of 3.1mΩ at VGS=10V, featuring high cell density design, low gate charge, and optimized for high efficiency power switching applications. |
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NCE01H10D
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NCEPOWER
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NCE01H10D is a channel enhancement mode power MOSFET with 100V drain-source voltage, 100A continuous drain current, and low on-state resistance of 9.9mΩ typical at VGS=10V, featuring advanced trench technology for high efficiency in power switching applications. |
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AK01H14
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AK Semiconductor
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AK01H14 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 140A continuous drain current, and 4.6mΩ typical RDS(ON) at 10V VGS, suitable for high-frequency switching applications. |
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NCE01H13
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NCEPOWER
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NCE01H13 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and 6.8mΩ typical RDS(ON) at 10V gate-source voltage, featuring advanced trench technology for low on-resistance and high switching performance. |
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AK01H13WD
