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01P-LEBSS-TF(LF)(SN)
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JST Manufacturing
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Solid State Lighting Connectors, Connectors, Interconnects, CONN PLUG HEADER 1POS SMD |
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3 |
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01P-LELSS-GA-TF(HF)
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JST Manufacturing
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Solid State Lighting Connectors, Connectors, Interconnects, CONN PLUG 1POS SMT GOLD |
Original |
PDF
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2 |
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01P-MWPV-SSR
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JST Manufacturing
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Connector Accessories Plug Housing For Pin Contacts 1POS PBT White |
Original |
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80.12KB |
2 |
SD2401P4-3
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Leiditech
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SD2401P4-3 is a 1-line high power TVS diode in DFN2020-3 package, featuring 4000W peak pulse power, 24V operating voltage, low leakage current, ultra low clamping voltage, and compliance with IEC61000-4-2, -4-4, and -4-5 standards. |
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ESD0701P3
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Leiditech
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ESD0701P3 is a 5500W peak pulse power TVS diode in DFN2020-3 package, featuring 7V working voltage, low leakage current, ultra-low clamping voltage, and protection for one power line, compliant with IEC61000-4-2 and IEC61000-4-5 standards. |
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SD1201P4-3
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Leiditech
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SD1201P4-3 is a 5400W peak pulse power TVS diode in DFN2020-3 package, featuring 12V operating voltage, low leakage current, ultra-low clamping voltage, and compliance with IEC61000-4-2, -4-4, and -4-5 standards. |
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SDA2401P
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Leiditech
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200W unidirectional TVS diode in DFN1006 package, with 24V working voltage, 26.7V breakdown voltage, 36V clamping voltage at 1A, low leakage current, and ESD protection up to ±15kV air, ±8kV contact. |
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SD1501P4-3
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Leiditech
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SD1501P4-3 is a 1-line high power TVS diode in DFN2020-3 package, with 15V operating voltage, 6500W peak pulse power (8/20µs), low leakage current, and ultra-low clamping voltage for power management and industrial applications. |
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ESD1501P3
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Leiditech
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ESD1501P3 is a 1-line high power TVS diode in DFN2020-3 package, featuring 6000W peak pulse power (8/20µs), 15V operating voltage, low leakage current, ultra low clamping voltage, and compliance with IEC61000-4-2 and IEC61000-4-5 standards. |
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SDA0801P
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Leiditech
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200W unidirectional TVS diode in DFN1006 package with 8V working voltage, low clamping voltage, 13.3V peak pulse voltage at 1A, 11pF typical capacitance, and ±30kV ESD protection for signal line protection in portable electronics. |
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SDA3601P
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Leiditech
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Unidirectional TVS diode in DFN1006 package, 200W peak pulse power (8/20µs), 36V working voltage, 40V breakdown voltage, 60V clamping voltage at 1A, low leakage current, ESD protection up to ±15kV air and ±8kV contact. |
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SDA0501P
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Leiditech
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SDA0501P is a unidirectional TVS diode in DFN1006 package with 5V operating voltage, ultra-low leakage in nA range, 8V clamping voltage at 1A, and peak pulse power of 25W, suitable for ESD protection in USB, Ethernet, and digital interfaces. |
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AK01P18D
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AK Semiconductor
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AK01P18D P-Channel Enhancement Mode Power MOSFET with -100V drain-source voltage, -18A continuous drain current, and 85mΩ typical RDS(ON) at VGS=-10V, utilizing advanced trench technology for low on-resistance and high cell density. |
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AK01P30
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AK Semiconductor
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AK01P30 P-Channel Enhancement Mode Power MOSFET with -100V drain-source voltage, -30A continuous drain current, 58mΩ maximum RDS(ON) at VGS=-10V, advanced trench technology, and TO-220-3L package. |
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ESD0801PB
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Microdiode Semiconductor
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Portable Electronics, Desktops, Servers, Notebooks, Cellular Phones, MP3 Ports; DFN1006; UL 94V-0; Tape and Reel; IEC61000-4-2 ±15kV (air), ±8kV (contact); transient protection; low clamping voltage. |
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AK01P30L
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK01P30L with -100V drain-source voltage, -30A continuous drain current, 58mΩ maximum RDS(ON) at VGS=-10V, advanced trench technology, and TO-251S package. |
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AK01P18
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK01P18 with -100V drain-source voltage, -18A continuous drain current, and low on-resistance of 85mΩ typical at VGS=-10V, featuring advanced trench technology for high efficiency in power management applications. |
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JMSH0401PG
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 211A, 0.8mΩ N-channel Power SGT MOSFET in PDFN5x6-8L package with low gate charge, 100% UIS tested, suitable for load switch and power management applications. |
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SD4501P4-3
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Leiditech
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6000W peak pulse power TVS diode in DFN2020-3 package, with 4.5V working voltage, low leakage current, ultra low clamping voltage, and 200A 8/20us surge current capability, suitable for power line protection. |
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AK01P05S
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET with -100V drain-source voltage, -5A continuous drain current, 85mΩ typical RDS(ON) at VGS=-10V, advanced trench technology, and low gate charge for power switch and DC/DC converter applications. |
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SD2401P4-3
