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01EBM1
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Curtis Industries
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Power Entry Connectors - Inlets, Outlets, Modules - Filtered, Connectors, Interconnects, POWER ENTRY FILTERED 1A FLANGE |
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NCE3401E
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NCEPOWER
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NCE3401E is a -30V, -4.4A channel enhancement mode power MOSFET with low RDS(ON) of less than 85mΩ at VGS=-2.5V, suitable for load switch and PWM applications in surface mount package. |
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WSDY3301E
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Winsemi Microelectronics
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Single-cell lithium-ion/polymer battery protection IC with integrated 55 mΩ MOSFET, overcharge, overdischarge, overcurrent, and short-circuit protection, 0.9 uA operating current, and SOT23-5L package.Single-cell lithium-ion/polymer battery protection IC with integrated 55 mΩ MOSFET, overcharge, overdischarge, overcurrent, and short-circuit protection, 0.9 uA operating current, available in SOT23-5L package.Single-cell lithium-ion/polymer battery protection IC with integrated 55 mΩ MOSFET, featuring overcharge, overdischarge, overcurrent, and short-circuit protection, 0.9 uA operating current, and SOT23-5L package.Single-cell lithium-ion/polymer battery protection IC with integrated 55 mΩ MOSFET, overcharge and overdischarge protection, overcurrent and short-circuit detection, 0.9 uA operating current, and SOT23-5L package. |
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JMTL2301E
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel enhancement mode power MOSFET with -20V drain-source voltage, -2A continuous drain current, and low RDS(ON) of 114mΩ at VGS = -4.5V, available in SOT-23 package. |
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AW93001EDNR
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Shanghai Awinic Technology
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A Low Power One-key Capacitor Touch Sensor |
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AW8601ECSR
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Shanghai Awinic Technology
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10-bit DAC Bi-directional ±150mA H-Bridge Driver |
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AK2301E
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AK Semiconductor
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P-Channel Enhancement Mode MOSFET AK2301E with -20V drain-source voltage, -2.6A continuous drain current, RDS(ON) less than 150mΩ at VGS=-2.5V, available in SOT-23 surface mount package. |
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NCE3401E
