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003A
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Essentra Components
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TAPERED CAP - OD RANGE: 5.3 - 6. |
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ULN2003AL
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Sinotech Mixic Electronics Co Ltd
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Seven-channel high-voltage, high-current Darlington transistor array with 500mA output current per channel, 50V breakdown voltage, TTL/CMOS-compatible inputs, integrated clamp diodes, and 2.7kΩ base resistors for direct logic interface. |
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JMSH1003ATLQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel TOLL power MOSFET with 2.7 mΩ typical RDS(ON) at 10V VGS, 228A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications in a PowerJE10x12 package. |
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JMTC3003A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 150A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.3mΩ at VGS=10V, advanced trench technology, low gate charge, and TO-220C-3L package. |
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JMTE3003A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 150A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.9mΩ at VGS=10V and 6.5mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and TO-263-3L package. |
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ULN2003A
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Sinotech Mixic Electronics Co Ltd
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Seven-channel high-voltage, high-current Darlington transistor array with 500mA output per channel, integrated clamp diodes, TTL/CMOS-compatible inputs, and 50V or 40V breakdown voltage options. |
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JMTQ3003A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 80A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V and 6.6mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and PDFN3x3-8L package. |
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ULN2003A-DIP16
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Sinotech Mixic Electronics Co Ltd
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Seven-channel high-voltage, high-current Darlington transistor array with 500mA per channel output, integrated clamp diodes, TTL/CMOS input compatibility, and 50V breakdown voltage, suitable for driving inductive loads such as relays and stepper motors. |
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NCE4003A
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NCEPOWER
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NCE4003A is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 3A continuous drain current, and low on-state resistance of 32mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications. |
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JMTG3003A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 90A N-channel enhancement mode power MOSFET with RDS(ON) less than 3.1mΩ at VGS=10V and 6.4mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and PDFN5x6-8L package. |
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ULN2003A
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JCET Group
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ULN2003A is a high-voltage, high-current Darlington transistor array with seven NPN pairs, each rated for 500mA collector current and 50V output, featuring integrated clamp diodes and 2.7kΩ base resistors for TTL or CMOS compatibility. |
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JMSH1003AGWQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V 2.8mΩ N-Ch Power MOSFET in PDFN5x6-8L-W package with 178A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. |
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ULN2003AU
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SLKOR
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Seven NPN Darlington pairs, 500mA collector current, 50V outputs, 2.7kΩ base resistor, TTL/5V CMOS compatible. |
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CBM2003AS16
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COREBAI
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Seven-channel Darlington transistor array with 500 mA rated collector current per channel, 50 V high-voltage outputs, integrated clamp diodes, and 2.7 kΩ base resistors for direct TTL or 5 V CMOS logic interface. |
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JMSH1003ATL
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in PowerJE®10x12 package with 2.7 mΩ RDS(ON) at 10V VGS, 228A continuous drain current, and low gate charge, suitable for high-efficiency power switching applications. |
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JMTK3003A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 150A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V, TO-252-3L package, designed for power management and load switching applications. |
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JMSH1003AE7Q
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Jiangsu JieJie Microelectronics Co Ltd
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100 V N-Ch Power MOSFET in TO-263-7L package with 2.8 mΩ RDS(ON) at 10 V VGS, 196 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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SM4003A
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SUNMATE electronic Co., LTD
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Surface mount silicon rectifier diodes with 50 to 1000V voltage range, 1.0A average forward current, low forward voltage drop, and SMA/DO-214AC package, suitable for surface mounted applications. |
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G1003A
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AK Semiconductor
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G1003A is a MOSFET in SOT23-3L package with 100V drain-source voltage, 5A continuous drain current, 3W power dissipation, and low RDS(ON) of 100 mΩ at 10V gate voltage, suitable for power switching and high-frequency applications. |
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ULN2003AL
