2N7002BK
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VBsemi Electronics Co Ltd
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N-Channel 60-V MOSFET in SOT-23 package with 2.8 ohm typical RDS(on) at 10 V VGS, low threshold voltage of 2 V, fast switching speed, 25 pF input capacitance, and 1200 V ESD protection. |
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DIO7002B
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Dioo Microcircuits Co Ltd
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5.5V, 2.5A low-loss power distribution switch with 70mΩ on-resistance, input voltage range 2.7V to 5.5V, programmable current limit, overcurrent and thermal protection, available in SOT23-5 package. |
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JMSH1002BC
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Jiangsu JieJie Microelectronics Co Ltd
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100 V N-Ch Power MOSFET with 2.1 mΩ RDS(ON) at VGS = 10V, 258 A continuous drain current, TO-220-3L and TO-263-3L package options, suitable for power management and motor driving applications.100V N-Ch Power MOSFET with 2.1 mΩ RDS(ON) at VGS = 10V, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, high continuous drain current of 258A, and designed for power management and motor driving applications. |
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JMTE3002B
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 180A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.6mΩ at VGS=10V, available in TO-263-3L package, featuring advanced trench technology, low gate charge, and 100% UIS tested. |
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3DD13002B(RANGE:25-30)
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JCET Group
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NPN transistor in TO-92 package, rated for 600 V collector-base voltage, 400 V collector-emitter voltage, 0.8 A continuous collector current, with a transition frequency of 5 MHz and DC current gain ranging from 9 to 40. |
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JMTK3002B
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 180A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.6m ohm at VGS=10V and 4.3m ohm at VGS=4.5V, available in TO-252-3L package. |
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3DD13002B(RANGE:20-25)
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JCET Group
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NPN transistor in TO-92 plastic package, rated for 400V collector-emitter voltage, 0.8A continuous collector current, with a DC current gain ranging from 9 to 40 and a transition frequency of 5MHz. |
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JMSH1002BE
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-Ch Power MOSFET with 2.1 mΩ RDS(ON) at VGS = 10V, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, high continuous drain current of 258A, and designed for power management and motor driving applications. |
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JMTG3002B
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 120A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.2mΩ at VGS=10V and 3.9mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and 100% UIS tested, in PDFN5x6-8L package. |
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SL1002B
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SLKOR
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2N7002BK
