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90D
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International Timing Technology
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Electromechanical Filter 90 MHz BPF, 3 dB IL, 1 dB Inband ripple |
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153.18KB |
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90D00103
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Storm Interface
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Switches - Accessories - KEY LEGEND SET D |
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348.92KB |
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90D-A
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Regal Electronics
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Connector: USB Connector: F: 8: RATHRU: 2 |
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39.07KB |
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90-DIPSTICK
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Grayhill
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Excavators, Hooks, Picks, Probes, Tuning Tools, Tools, TUNING TOOL POINTED PLASTIC |
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2EZ190D5
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SUNMATE electronic Co., LTD
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Axial leaded silicon Zener diode in DO-41 package, 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, low leakage current, high reliability, suitable for single-phase half-wave applications at 60Hz.Axial leaded silicon Zener diode in DO-41 package with 2.0W power dissipation, 3.6 to 200V voltage range, color band indicating cathode, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode in DO-41 package with 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, low leakage current, and operating junction temperature from -55 to +175°C. |
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RF-WUB190DS-JD-E0
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REFOND
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White LED with 1.6 x 0.8 x 0.7 mm package, blue chip with phosphor, viewing angle 140 degrees, forward current 20 mA, luminous intensity 700-1200 mcd, moisture sensitivity level 3, RoHS compliant. |
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RF-BWB190DS-EB-C
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REFOND
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White LED in 1.6mm x 0.8mm x 0.7mm package, fabricated using a blue chip and phosphor, with viewing angle of 140 degrees, forward voltage range 2.6V to 3.5V, luminous intensity from 230 to 800 mcd at 10mA, and moisture sensitivity level 3. |
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ETA1090D3M
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eta SEMICONDUCTOR
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High efficiency 1MHz synchronous step-up converter with up to 3A output current at 5V from 3.6V input, integrated power MOSFETs, true shut-off protection, and adjustable output voltage in a DFN3x3-12 package. |
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AKP02590D
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AK Semiconductor
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250V, 90A N-Channel Super Trench Power MOSFET with RDS(on) less than 15mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification, featuring low gate charge and 175°C operating temperature. |
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3EZ190D5
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SUNMATE electronic Co., LTD
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Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, voltage range 3.9 to 400V, low leakage current, high reliability, and ±5% tolerance indicated by suffix 5.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, and ±5% tolerance option, suitable for high reliability applications.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, voltage range 3.9 to 400V, low leakage current, high reliability, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, and ±5% tolerance indicated by suffix ""5"".Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, operating voltage range 3.9 to 400V, low leakage current, high reliability, and ±5% tolerance indicated by suffix ""5"". |
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2EZ190D5L
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SUNMATE electronic Co., LTD
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Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6V to 200V zener voltage range, low leakage current, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-15 package, 2.0W power dissipation, 3.6 to 200V zener voltage range, with ±5% or ±10% tolerance options, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode in DO-15 package, 2.0W power dissipation, 3.6V to 200V zener voltage range, ±5% or ±10% tolerance, low leakage current, high reliability, operating junction temperature up to +175°C.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, 60K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, low leakage current, and operating junction temperature from -55 to +175°C. |
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RF-WUB190DS-DD-E4
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REFOND
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White LED with 1.6 x 0.8 x 0.7 mm package, viewing angle 140 degrees, forward current 20 mA, luminous intensity 600-1200 mcd, forward voltage 2.7-3.5 V, operating temperature -40 to +85 °C. |
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AK6890D
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 68V drain-source voltage, 90A continuous drain current, and 7.5mΩ typical RDS(ON) at 10V VGS, featuring high ESD capability and optimized for power switching applications. |
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RF-WUB190DS-DD-P
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REFOND
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White LED in 1.6mm x 0.8mm x 0.7mm package, fabricated using a blue chip and phosphor, with viewing angle of 140 degrees, forward voltage range 2.8V to 3.6V, luminous intensity from 600 to 1200 mcd at 20mA. |
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AK6990D
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK6990D with 69V drain-source voltage, 90A continuous drain current, 7.2mΩ typical RDS(ON) at 10V VGS, advanced trench technology, low gate charge, and 160W power dissipation capability. |
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NCE6890D
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NCEPOWER
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NCE6890D N-Channel Enhancement Mode Power MOSFET with 68V drain-source voltage, 90A continuous drain current, and 7.5mΩ typical RDS(ON) at 10V gate-source voltage, utilizing trench technology for low on-resistance and high efficiency in power switching applications. |
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NCE6990D
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NCEPOWER
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NCE6990D N-Channel Enhancement Mode Power MOSFET with 69V drain-source voltage, 90A continuous drain current, and low RDS(ON) of 6.2mΩ typical at VGS=10V, suitable for high-frequency switching applications. |
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AKP2390D
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AK Semiconductor
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AKP2390D N-Channel Super Trench Power MOSFET with 230V drain-source voltage, 90A continuous drain current, 15.5mΩ RDS(on) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. |
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3EZ190D5L
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SUNMATE electronic Co., LTD
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Axial leaded silicon zener diode with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and DO-15 package.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package.Axial leaded silicon Zener diode 3EZ3.9D5L to 3EZ400D5L with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and DO-15 package.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package.Axial leaded silicon Zener diodes with power dissipation of 3.0W, voltage range from 3.9V to 400V, low leakage current, high reliability, and complete series from 3EZ3.9D5L to 3EZ400D5L.Axial leaded silicon Zener diode 3EZ3.9D5L with 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, and ±5% tolerance, suitable for general purpose regulation and protection applications.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package. |
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2EZ190D5
