AKP85T30T
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET with 85V VDS, 300A ID, RDS(on) less than 2.2mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification, featuring low gate charge and 175°C operating temperature. |
Original |
PDF
|
|
|
|
AKP85T25
|
|
AK Semiconductor
|
AKP85T25 N-Channel Super Trench Power MOSFET with 85V VDS, 250A ID, RDS(on) less than 2.6mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification, featuring low gate charge and 175°C operating temperature. |
Original |
PDF
|
|
|
|
AKP85T11
|
|
AK Semiconductor
|
AKP85T11 N-Channel Super Trench Power MOSFET with 85V drain-source voltage, 110A continuous drain current, 5.3mΩ typical RDS(on) at 10V VGS, and 175°C maximum junction temperature, suitable for high-frequency switching applications. |
Original |
PDF
|
|
|
|
AKP85T16D
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET with 85V drain-source voltage, 160A continuous drain current, 3.8mΩ RDS(on) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. |
Original |
PDF
|
|
|
|
SMD2920P185TF
|
|
SUNMATE electronic Co., LTD
|
Surface mount resettable PTC over-current protection device with holding current from 0.3A to 3.0A, working voltage up to 60V, low resistance, fast response, and high surge capability, suitable for USB, mobile devices, and general electronics applications. |
Original |
PDF
|
|
|
|
AKP85T12
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET AKP85T12 with 85V drain-source voltage, 120A continuous drain current, 4.5mΩ typical RDS(ON) at 10V VGS, 55nC total gate charge, and 175°C maximum operating temperature. |
Original |
PDF
|
|
|
|
AKP85T14
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET with 85V drain-source voltage, 140A continuous drain current, 3.6mΩ typical RDS(on) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. |
Original |
PDF
|
|
|
|
JVC085T
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
80V N-channel Power MOSFET in TO-220-3L package with 4.5 mΩ typical RDS(ON) at 10V VGS, 126A maximum continuous drain current, low gate charge, and 100% UIS tested for reliable power switching applications. |
Original |
PDF
|
|
|
|
AKP85T11M
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET with 85V drain-source voltage, 115A continuous drain current, 5.7mΩ RDS(on) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. |
Original |
PDF
|
|
|
|
AKP85T12D
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET with 85V VDS, 120A ID, RDS(on) less than 5.5mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification, featuring low gate charge and 175°C operating temperature. |
Original |
PDF
|
|
|
|
AKP85T16
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET with 85V VDS, 160A ID, RDS(on) less than 3.8mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification, featuring low gate charge and 175°C operating temperature. |
Original |
PDF
|
|
|
|
AKP85T14D
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET AKP85T14D with 85V drain-source voltage, 140A continuous drain current, 3.3mΩ typical RDS(on) at 10V VGS, 84nC total gate charge, and 175°C maximum operating temperature. |
Original |
PDF
|
|
|
|
AKP85T35T
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET with 85V drain-source voltage, 350A continuous drain current, 1.85mΩ RDS(ON) at 10V VGS, suitable for high-frequency switching and synchronous rectification. |
Original |
PDF
|
|
|
|
CBM128S085TS
|
|
COREBAI
|
8-channel 10/12-bit voltage output digital-to-analog converter with rail-to-rail output, 1.8V to 5.5V supply voltage, SPI interface up to 40MHz, integrated reference inputs, and low power consumption down to 10uA in sleep mode. |
Original |
PDF
|
|
|
|
|
|
CBM108S085TS
|
|
COREBAI
|
8-channel 10/12-bit voltage output digital-to-analog converter with rail-to-rail output, 1.8V to 5.5V supply voltage, SPI interface up to 40MHz, integrated reference inputs, and low power consumption down to 10uA in sleep mode. |
Original |
PDF
|
|
|
|
AKP85T25D
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET AKP85T25D with 85V drain-source voltage, 250A continuous drain current, RDS(ON) less than 2.6mΩ at 10V VGS, suitable for high-frequency switching and synchronous rectification. |
Original |
PDF
|
|
|
|
2SB985-TA
|
|
JCET Group
|
PNP transistor in TO-92MOD package with -60V collector-base voltage, -50V collector-emitter voltage, -3A continuous collector current, low saturation voltage, and high DC current gain, suitable for power supplies, relay drivers, and lamp drivers. |
Original |
PDF
|
|
|
|
AKP85T15
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET with 85V drain-source voltage, 150A continuous drain current, 3.9mΩ RDS(on) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. |
Original |
PDF
|
|
|
|
AKP85T25T
|
|
AK Semiconductor
|
N-Channel Super Trench Power MOSFET with 85V VDS, 250A ID, and RDS(on) less than 2.8mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification. |
Original |
PDF
|
|
|
AKP85T30T
