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50G6P41
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Unknown
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The Diode Data Book with Package Outlines 1993 |
Scan |
PDF
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93.25KB |
2 |
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50G6P43
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Unknown
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The Diode Data Book with Package Outlines 1993 |
Scan |
PDF
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90.97KB |
2 |
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50GD33
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Eaton
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Circuit Protection - Accessories - GAUGE PIECE D3 50A 500V FOR E33 |
Original |
PDF
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506.08KB |
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50G LARGE
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Easy Braid
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Static Control, ESD, Clean Room Products - Static Control Clothing - GLOVES LARGE 1PAIR |
Original |
PDF
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3.05MB |
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50-GP-1
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Cinch Connectors
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Card Edge Connectors - Accessories, Connectors, Interconnects, CONN CARD EDGE |
Original |
PDF
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282 |
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50GP-1
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Cinch Connectors
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - EDGE CONNECTOR ACCESSORY, CARD GUIDE, GREEN |
Scan |
PDF
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79.35KB |
1 |
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50-GP-1B
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Cinch Connectors
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Card Edge Connectors - Accessories, Connectors, Interconnects, CONN CARD EDGE |
Original |
PDF
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282 |
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50GP-1B
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Cinch Connectors
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - EDGE CONNECTOR ACCESSORY, CARD GUIDE, BLACK |
Scan |
PDF
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79.35KB |
1 |
K1050G
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Jiangsu JieJie Microelectronics Co Ltd
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Bidirectional silicon switch with high power handling, available in KxxxxG series, featuring breakover voltages from 80V to 270V, on-state current up to 1A, and surge current tolerance of 16.7A peak, suitable for high-voltage ignition and protection applications. |
Original |
PDF
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S8050-G(RANGE:120-200)
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JCET Group
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NPN transistor in SOT-23 package with collector current of 500 mA, collector-emitter voltage of 25 V, DC current gain up to 400, and transition frequency of 150 MHz.NPN transistor in SOT-23 package with collector current of 500 mA, collector-emitter voltage of 25 V, DC current gain from 120 to 400, and transition frequency of 150 MHz. |
Original |
PDF
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SS8050-G(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-23 package with 25V collector-emitter voltage, 1.5A collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400, suitable for general-purpose switching and amplification applications. |
Original |
PDF
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GD32F150G6U6TR
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GigaDevice Semiconductor (Beijing) Inc
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RISC Microcontroller |
Original |
PDF
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NCE60P50G
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NCEPOWER
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NCE60P50G is a -60V, -50A P-channel MOSFET with 23mΩ typical RDS(ON) at VGS=-10V, featuring low gate charge, high current capability, and 150°C operating temperature in a DFN5x6-8L package. |
Original |
PDF
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GD32F150G4U6TR
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GigaDevice Semiconductor (Beijing) Inc
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RISC Microcontroller |
Original |
PDF
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GD32F350G6U6TR
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GigaDevice Semiconductor (Beijing) Inc
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RISC Microcontroller |
Original |
PDF
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NCE30P50G
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -50A continuous drain current, RDS(ON) less than 7mΩ at VGS=-10V, housed in DFN5x6-8L package. |
Original |
PDF
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K1050G
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SUNMATE electronic Co., LTD
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Axial leaded silicon bilateral voltage triggered device in DO-15 package, with peak off-state voltage from 70 to 220 V, on-state RMS current 1 A, and non-repetitive surge current up to 16.7 A. |
Original |
PDF
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GD32F150G8U6TR
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GigaDevice Semiconductor (Beijing) Inc
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RISC Microcontroller |
Original |
PDF
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GD32F350G4U6TR
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GigaDevice Semiconductor (Beijing) Inc
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RISC Microcontroller |
Original |
PDF
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RGP50G
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SUNMATE electronic Co., LTD
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5.0 A average forward current, 50 to 1000 V peak repetitive reverse voltage fast recovery rectifier diode in DO-201AD package with 300 A surge capability and 150 to 500 ns reverse recovery time. |
Original |
PDF
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K1050G
