|
50G6P41
|
|
Unknown
|
The Diode Data Book with Package Outlines 1993 |
Scan |
PDF
|
93.25KB |
2 |
|
50G6P43
|
|
Unknown
|
The Diode Data Book with Package Outlines 1993 |
Scan |
PDF
|
90.97KB |
2 |
|
50GD33
|
|
Eaton
|
Circuit Protection - Accessories - GAUGE PIECE D3 50A 500V FOR E33 |
Original |
PDF
|
506.08KB |
|
|
50G LARGE
|
|
Easy Braid
|
Static Control, ESD, Clean Room Products - Static Control Clothing - GLOVES LARGE 1PAIR |
Original |
PDF
|
3.05MB |
|
|
50-GP-1
|
|
Cinch Connectors
|
Card Edge Connectors - Accessories, Connectors, Interconnects, CONN CARD EDGE |
Original |
PDF
|
|
282 |
|
50GP-1
|
|
Cinch Connectors
|
Over 600 obsolete distributor catalogs now available on the Datasheet Archive - EDGE CONNECTOR ACCESSORY, CARD GUIDE, GREEN |
Scan |
PDF
|
79.35KB |
1 |
|
50-GP-1B
|
|
Cinch Connectors
|
Card Edge Connectors - Accessories, Connectors, Interconnects, CONN CARD EDGE |
Original |
PDF
|
|
282 |
|
50GP-1B
|
|
Cinch Connectors
|
Over 600 obsolete distributor catalogs now available on the Datasheet Archive - EDGE CONNECTOR ACCESSORY, CARD GUIDE, BLACK |
Scan |
PDF
|
79.35KB |
1 |
K1050G
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
Bidirectional silicon switch with high power handling, available in KxxxxG series, featuring breakover voltages from 80V to 270V, on-state current up to 1A, and surge current tolerance of 16.7A peak, suitable for high-voltage ignition and protection applications. |
Original |
PDF
|
|
|
|
S8050-G(RANGE:120-200)
|
|
JCET Group
|
NPN transistor in SOT-23 package with collector current of 500 mA, collector-emitter voltage of 25 V, DC current gain up to 400, and transition frequency of 150 MHz.NPN transistor in SOT-23 package with collector current of 500 mA, collector-emitter voltage of 25 V, DC current gain from 120 to 400, and transition frequency of 150 MHz. |
Original |
PDF
|
|
|
|
SS8050-G(RANGE:200-350)
|
|
JCET Group
|
NPN transistor in SOT-23 package with 25V collector-emitter voltage, 1.5A collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400, suitable for general-purpose switching and amplification applications. |
Original |
PDF
|
|
|
|
NCE60P50G
|
|
NCEPOWER
|
NCE60P50G is a -60V, -50A P-channel MOSFET with 23mΩ typical RDS(ON) at VGS=-10V, featuring low gate charge, high current capability, and 150°C operating temperature in a DFN5x6-8L package. |
Original |
PDF
|
|
|
|
GD32F150G4U6TR
|
|
GigaDevice Semiconductor (Beijing) Inc
|
32-bit MCU, Cortex-M3, 72 MHz, 64 KB Flash, 8 KB SRAM, 2.6-3.6 V, -40 to +85 °C, 12-bit ADC/DAC, timers, PWM, SPI, I2C, USART, I2S, HDMI-CEC, TSI, USBD. |
Original |
PDF
|
|
|
|
GD32F150G6U6TR
|
|
GigaDevice Semiconductor (Beijing) Inc
|
32-bit, Cortex-M3, 72 MHz, 64 KB Flash, 8 KB SRAM, 2.6-3.6 V, -40 to +85 °C, 12-bit ADC/DAC, 2 comp, 6 timers, PWM, 2 SPI/I2C/USART, I2S, HDMI-CEC, TSI, USBD. |
Original |
PDF
|
|
|
|
|
|
GD32F150G8U6TR
|
|
GigaDevice Semiconductor (Beijing) Inc
|
32-bit MCU, Arm Cortex-M3, 72 MHz, 64 KB Flash, 8 KB SRAM, 12-bit ADC/DAC, 2 comp, 5x16-bit timers, 32-bit timer, PWM, 2 SPIs, 2 I2Cs, 2 USARTs, I2S, HDMI-CEC, TSI, USBD, 2.6-3.6 V, -40 to +85 °C. |
Original |
PDF
|
|
|
|
GD32F350G6U6TR
|
|
GigaDevice Semiconductor (Beijing) Inc
|
32-bit, Cortex-M4, 108 MHz, 128 KB Flash, 16 KB SRAM, 12-bit ADC/DAC, 2 comp, 5x16-bit, 1x32-bit timers, PWM, 2 SPI/I2C/USART, I2S, HDMI-CEC, TSI, USBFS, 2.6-3.6 V, -40 to +105 °C. |
Original |
PDF
|
|
|
|
K1050G
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon bilateral voltage triggered device in DO-15 package, with peak off-state voltage from 70 to 220 V, on-state RMS current 1 A, and non-repetitive surge current up to 16.7 A. |
Original |
PDF
|
|
|
|
NCE30P50G
|
|
NCEPOWER
|
P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -50A continuous drain current, RDS(ON) less than 7mΩ at VGS=-10V, housed in DFN5x6-8L package. |
Original |
PDF
|
|
|
|
CJ6330A50G
|
|
JCET Group
|
Low-dropout linear regulator with input voltage range of 2.5V to 18V, providing up to 300mA output current, available in fixed output voltages from 1.2V to 5.0V, featuring ultra-low quiescent current of 2.0uA and dropout voltage as low as 160mV at 100mA load. |
Original |
PDF
|
|
|
|
EGP50G
|
|
SUNMATE electronic Co., LTD
|
5.0 A glass passivated fast efficient diode with 50 to 1000 V peak repetitive reverse voltage, low forward voltage drop, high surge current capability up to 150 A, and operating junction temperature from -65 to +125 °C.5.0A glass passivated fast efficient diode in DO-201AD package, with repetitive reverse voltage from 50 to 1000V, low forward voltage drop, high surge current capability of 150A, and operating junction temperature from -65 to +125°C.5.0 A glass passivated fast efficient diode with 50 to 1000 V peak repetitive reverse voltage, low forward voltage drop, high surge current capability, and operating temperature range from -65 to +125 °C.5.0 A glass passivated fast efficient diode in DO-201AD package, with voltage ratings from 50 to 1000 V, low forward voltage drop, high surge current capability of 150 A, and reverse recovery time of 50 to 75 ns.5.0 A glass passivated fast efficient diode in DO-201AD package, with repetitive reverse voltage from 50 to 1000 V, low forward voltage drop, high surge current capability of 150 A, and operating junction temperature up to 125 °C. |
Original |
PDF
|
|
|
K1050G
