|
05V-50
|
|
Unknown
|
The Diode Data Book with Package Outlines 1993 |
Scan |
PDF
|
87.09KB |
2 |
JEB05VCDF-AU
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
Bi-directional TVS diode array in DFN1006-2L package with 5.0V operating voltage, ultra low 0.55pF capacitance, 6.0V breakdown voltage, and 9.5V clamping voltage at 1A, designed for ESD protection in high-speed interfaces. |
Original |
PDF
|
|
|
|
JR0405V
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
2A SCR in SOT-223 package with 600V repetitive peak off-state voltage, gate trigger current ≤200uA, and integrated gate-cathode resistor of 10k to 80k ohms, suitable for straight hair devices, igniters, and anion generators. |
Original |
PDF
|
|
|
|
JEB05VCDS-A
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
Bidirectional TVS diode JEB05VCDS-A in DFN0603-2L package, featuring 5V reverse working voltage, 0.5pF typical capacitance, 15kV ESD protection, and low clamping voltage for high-speed data line protection. |
Original |
PDF
|
|
|
|
SLESD05V32D-LC
|
|
SLKOR
|
IEC61000-4-2 ±15kV (air), ±8kV (contact), IEC61000-4-4 40A, 200W peak, 5V, low leakage, SOD-323, 3000pcs/reel. |
Original |
PDF
|
|
|
|
JEB05VCDF
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
Ultra low capacitance bidirectional TVS diode array for ESD protection, operating at 5.0V with 0.55pF typical capacitance, 6.0V breakdown voltage, and 10.5V clamping voltage at 1A, suitable for high-speed data lines in USB, HDMI, and display port applications. |
Original |
PDF
|
|
|
|
APM32F405VGT6
|
|
Geehy Semiconductor
|
168MHz, 1MB Flash, 192KB SRAM, 4KB backup, 140 I/O, 4 USART, 3 I2C, 3 SPI, 2 CAN, 3 USB_OTG, 1 SDIO, 1 Ethernet, 3 ADC, 2 DAC. |
Original |
PDF
|
|
|
|
JR0205V
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
2A SCR in SOT-223 package with 600V repetitive peak off-state voltage, gate trigger current ≤200uA, and integrated 10k to 80k ohm gate-cathode resistor for applications requiring reliable switching performance. |
Original |
PDF
|
|
|
|
GD32E505VET6
|
|
GigaDevice Semiconductor (Beijing) Inc
|
32-bit MCU, Arm Cortex-M33, 180 MHz, 512 KB Flash, 128 KB SRAM, dual 12-bit ADC, dual DAC, USBHS, CAN, TMU, 1.71-3.63 V, -40°C to +105°C. |
Original |
PDF
|
|
|
|
GD32E505VCT6
|
|
GigaDevice Semiconductor (Beijing) Inc
|
32-bit MCU, Arm Cortex-M33, 180 MHz, 512 KB Flash, 128 KB SRAM, 2x 12-bit ADC, 2x DAC, 3x comp, 9x 16-bit timer, 1x 32-bit timer, 2x PWM, 3x SPI, 3x I2C, 6x USART, 2x I2S, USBHS, 3x CAN, TMU, SHRTIMER, EXMC, SQPI, 1.71-3.63 V, -40°C to +105°C. |
Original |
PDF
|
|
|
|
JR0105V
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
1A RMS current, 600V repetitive peak off-state voltage SCR in SOT-223 package with gate-cathode resistor, suitable for hair straighteners, igniters, and anion generators. |
Original |
PDF
|
|
|
JEB05VCDF-AU
