GD32VW553HIQ7
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GigaDevice Semiconductor (Beijing) Inc
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2.4GHz Wi-Fi/BLE, RISC-V 160MHz, 4096KB Flash, 320KB SRAM, 12-bit ADC, 4x16-bit timers, 1 PWM, SPI, 2xI2C, USART, 2xUART, QSPI, 1.8-3.6V, -40 to +105°C. |
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AK40H32VD
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AK Semiconductor
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AK40H32VD N-Channel Enhancement Mode Power MOSFET with 40V VDS, 320A ID, and RDS(ON) less than 1.3mΩ at VGS=10V, featuring high cell density design, low gate charge, and optimized for power switching and high-frequency applications. |
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AK30H32VD
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AK Semiconductor
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AK30H32VD N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 320A continuous drain current, and low RDS(ON) of 1.6mΩ at VGS=10V, featuring high cell density design and optimized for power switching applications. |
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GD32VW553HIQ6
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GigaDevice Semiconductor (Beijing) Inc
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2.4GHz Wi-Fi & BLE, 160MHz RISC-V, 4096KB Flash, 320KB SRAM, 12-bit ADC, 16-bit timers, PWM, SPI, I2C, USART, UART, crypto, 1.8-3.6V, -40 to +105°C. |
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GD32VW553HMQ6
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GigaDevice Semiconductor (Beijing) Inc
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2.4GHz Wi-Fi/BLE, RISC-V 160MHz, 4096KB Flash, 320KB SRAM, 12-bit ADC, 16-bit timers, PWM, SPI/I2C/USART/UART, crypto, 1.8-3.6V, -40 to +105°C. |
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GD32VW553KIQ7
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GigaDevice Semiconductor (Beijing) Inc
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2.4GHz Wi-Fi & BLE, RISC-V 32-bit 160MHz, 4096KB Flash, 320KB SRAM, 12-bit ADC, SPI/I2C/USART/UART, crypto, 1.8-3.6V, -40 to +105°C. |
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GD32VW553KMQ7
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GigaDevice Semiconductor (Beijing) Inc
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2.4GHz Wi-Fi & BLE, RISC-V 32-bit @160MHz, 4096KB Flash, 320KB SRAM, 12-bit ADC, timers, PWM, SPI, I2C, USART, UART, crypto, QSPI, 1.8-3.6V, -40 to +105°C. |
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GD32VW553KMQ6
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GigaDevice Semiconductor (Beijing) Inc
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2.4GHz Wi-Fi & BLE SoC, 160 MHz RISC-V, 4096 KB Flash, 320KB SRAM, 12-bit ADC, 4x16-bit timers, PWM, SPI, I2C, USART, UART, crypto, 1.8-3.6V, -40 to +105°C. |
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GD32VW553HMQ7
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GigaDevice Semiconductor (Beijing) Inc
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2.4GHz Wi-Fi & BLE, 160 MHz RISC-V, 4096KB Flash, 320KB SRAM, 12-bit ADC, 16-bit timers, PWM, SPI, I2C, USART, UART, crypto, 1.8-3.6V, -40 to +105°C. |
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GD32VW553KIQ6
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GigaDevice Semiconductor (Beijing) Inc
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2.4GHz Wi-Fi/BLE SoC, RISC-V 160MHz, 4096KB Flash, 320KB SRAM, 12-bit ADC, timers, PWM, SPI, I2C, USART, UART, crypto, 1.8-3.6V, -40 to +105°C. |
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CESDP0603UC32VB
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CREATEK Microelectronics
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Ultra-low capacitance ESD protection diode in 0603 package with 32V operating voltage, 0.05pF typical capacitance, and 35V clamping voltage for high-speed data lines per IEC61000-4-2 8kV contact discharge. |
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GD32VW553HIQ7
