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8N60
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Unisonic Technologies
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7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET |
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8N60A
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AK Semiconductor
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8A 600V N-channel enhancement mode MOSFET with typical on-resistance of 0.85 ohms at VGS = 10V, available in TO-220AB, TO-220F, and TO-263 packages, featuring high dv/dt capability and 100% avalanche tested performance. |
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JMPF8N60BJ
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Jiangsu JieJie Microelectronics Co Ltd
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600V, 8A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.74 ohm at VGS=10V, designed for fast switching, PWM applications, and power management. |
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NCEAP018N60GU
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NCEPOWER
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NCEAP018N60GU is an automotive-grade N-channel Super Trench II power MOSFET with 60 V drain-source voltage, 256 A continuous drain current, 1.6 mΩ typical RDS(ON) at 10 V VGS, and 175 °C maximum operating temperature, suitable for high-frequency switching and synchronous rectification applications. |
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SLF8N60C
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Maplesemi
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600V N-Channel MOSFET with 7.5A continuous drain current, 1.0 ohm typical RDS(on) at VGS = 10V, low gate charge of 29nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. |
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NCEAP018N60AGU
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NCEPOWER
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NCEAP018N60AGU is an automotive-grade N-channel Super Trench II power MOSFET with 60 V drain-source voltage, 270 A continuous drain current, and low on-resistance of 1.4 mΩ typical at 10 V gate-source voltage, optimized for high-frequency switching applications. |
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JMPC8N60BJ
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Jiangsu JieJie Microelectronics Co Ltd
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8A, 600V N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 1.29 ohm at VGS = 10V, designed for fast switching and power management applications. |
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8N60A
