NCE9435A
|
|
NCEPOWER
|
P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -5.3A continuous drain current, 85mΩ RDS(ON) at VGS=-4.5V, and 49mΩ RDS(ON) at VGS=-10V, suitable for load switch and PWM applications in SOP-8 package. |
Original |
PDF
|
|
|
JMTP9435A
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
P-channel Enhancement Mode Power MOSFET JMTP9435A in SOP-8 package, -30V, -5.1A, RDS(ON) < 40mΩ at VGS = -10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. |
Original |
PDF
|
|
|
CEM4435A
|
|
VBsemi Electronics Co Ltd
|
P-Channel 30-V MOSFET with 9.0 A continuous drain current, 0.018 ohm RDS(on) at VGS = -10 V, and 13 nC gate charge, suitable for load and battery switch applications in a DSO-8 package. |
Original |
PDF
|
|
|
FDS4435A
|
|
VBsemi Electronics Co Ltd
|
P-Channel 30-V (D-S) MOSFET FDS4435A with -9.0 A continuous drain current, -10 V gate-source voltage, RDS(on) of 0.018 ohm at VGS = -10 V, and 13 nC typical gate charge, suitable for load and battery switch applications. |
Original |
PDF
|
|
|
SL9435A
|
|
SLKOR
|
Trench Power MV MOSFET technology, excellent heat dissipation, high density cell design, RDS(ON) 60mΩ@10V, 90mΩ@4.5V, VDS -30V, ID MAX -5A. |
Original |
PDF
|
|
|
JMTP4435A
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
P-channel Enhancement Mode Power MosFET JMTP4435A in SOP-8 package, -30V, -10A, with RDS(ON) < 16.6mΩ at VGS = -10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. |
Original |
PDF
|
|
|
SL4435A
|
|
SLKOR
|
P-Channel MOSFET, -30V/-10A, Trench Power LV tech, Low RDS(ON), High Speed, VDS -30V, VGS ±20V, TJ 150°C, ID 10A. |
Original |
PDF
|
|
|
AK9435A
|
|
AK Semiconductor
|
P-Channel Enhancement Mode Power MOSFET AK9435A with -30V drain-source voltage, -5.3A continuous drain current, 85mΩ RDS(ON) at VGS=-4.5V, and 49mΩ at VGS=-10V, suitable for load switch and PWM applications in SOP-8 package. |
Original |
PDF
|
|
|
MT4435ACTR
|
|
VBsemi Electronics Co Ltd
|
P-Channel 30-V, 9.0-A MOSFET in DSO-8 package with RDS(on) of 0.018 ohms at VGS = -10 V and 13 nC gate charge, suitable for load and battery switch applications, halogen-free per IEC 61249-2-21. |
Original |
PDF
|
|
|
CEM4435A-VB
|
|
VBsemi Electronics Co Ltd
|
P-Channel 30-V MOSFET with 9.0 A continuous drain current, 0.018 ohm RDS(on) at VGS = -10 V, and 13 nC gate charge, suitable for load and battery switch applications in a DSO-8 package. |
Original |
PDF
|
|
|