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    /20N10 Search Results

    /20N10 Datasheets (14)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    20N10
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.25KB 1
    20N100
    		Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 133.07KB 1
    20N100D2
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.25KB 1
    20N100E2
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.25KB 1
    badge JMTQ320N10A
    		Jiangsu JieJie Microelectronics Co Ltd 100V, 23A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 32mΩ at VGS=10V, available in PDFN3x3-8L package, designed for load switching, PWM, and power management applications. Original PDF
    badge SLP120N10G
    		Maplesemi N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, 4.9mΩ typical RDS(on) at VGS = 10V, low Crss, fast switching, and 100% avalanche tested. Original PDF
    badge JMTG320N10A
    		Jiangsu JieJie Microelectronics Co Ltd N-channel enhancement mode power MOSFET with 100V drain-source voltage, 28A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V in a PDFN5x6-8L package. Original PDF
    badge SLB120N10G
    		Maplesemi N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, typical RDS(on) of 4.6mΩ at VGS = 10V, low input capacitance, and fast switching characteristics suitable for high-efficiency power management applications. Original PDF
    badge CJAC20N10
    		JCET Group CJAC20N10 N-Channel Power MOSFET with 100V drain-source voltage, 20A continuous drain current, ultra low RDS(on), high energy avalanche capability, and fast recovery drain-to-source diode for high voltage switching applications. Original PDF
    badge JMTC320N10A
    		Jiangsu JieJie Microelectronics Co Ltd N-channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 30A continuous drain current, and RDS(on) less than 32mΩ at VGS=10V in TO-220C package. Original PDF
    badge NCEAP020N10LL
    		NCEPOWER NCE AP020N10LL is an Automotive N-Channel Super Trench II Power MOSFET with 100 V drain-source voltage, 330 A continuous drain current, 1.5 mΩ typical RDS(on) at VGS = 10 V, and 175 °C maximum operating temperature. Original PDF
    badge SL20N10
    		SLKOR Original PDF
    badge JMTI320N10A
    		Jiangsu JieJie Microelectronics Co Ltd N-channel enhancement mode power MOSFET with 100V drain-source voltage, 30A continuous drain current, and low on-resistance of 32mΩ at VGS=10V, available in TO-251-4R package. Original PDF
    badge JMTK320N10A
    		Jiangsu JieJie Microelectronics Co Ltd N-channel Enhancement Mode Power MOSFET JMTK320N10A with 100V drain-source voltage, 30A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V, available in TO-252-3L package. Original PDF
    SF Impression Pixel

    /20N10 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPG20N10S4L35ATMA1

    MOSFET 2N-CH 100V 20A 8TDSON
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    DigiKey IPG20N10S4L35ATMA1 Tape & Reel 25,000 5,000
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    Mouser Electronics IPG20N10S4L35ATMA1 24,598
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    Bristol Electronics IPG20N10S4L35ATMA1 541
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    Rochester Electronics IPG20N10S4L35ATMA1 211,430 1
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    Infineon Technologies AG IPB020N10N5LFATMA1

    MOSFET N-CH 100V 176A TO263-3
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    DigiKey IPB020N10N5LFATMA1 Tape & Reel 13,000 1,000
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    Mouser Electronics IPB020N10N5LFATMA1 8,112
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    Bristol Electronics IPB020N10N5LFATMA1 395
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    Rutronik IPB020N10N5LFATMA1 Tape & Reel 12,000 1,000
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    EBV Elektronik IPB020N10N5LFATMA1 9 Weeks 1,000
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    Win Source Electronics IPB020N10N5LFATMA1 5,980
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    Infineon Technologies AG IPG20N10S4L22AATMA1

    MOSFET 2N-CH 100V 20A 8TDSON
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    DigiKey () IPG20N10S4L22AATMA1 Digi-Reel 12,730 1
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    IPG20N10S4L22AATMA1 Cut Tape 12,730 1
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    IPG20N10S4L22AATMA1 Tape & Reel 10,000 5,000
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    Avnet Americas IPG20N10S4L22AATMA1 Tape & Reel 25,000 12 Weeks 5,000
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    Newark IPG20N10S4L22AATMA1 Cut Tape 4,565 1
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    Rochester Electronics IPG20N10S4L22AATMA1 285,365 1
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    EBV Elektronik IPG20N10S4L22AATMA1 13 Weeks 5,000
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    Infineon Technologies AG IQD020N10NM5CGSCATMA1

    OPTIMOS POWER MOSFETS 25 V - 150
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    IQD020N10NM5CGSCATMA1 Cut Tape 4,700 1
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    Avnet Americas IQD020N10NM5CGSCATMA1 Tape & Reel 39 Weeks 5,000
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    Mouser Electronics IQD020N10NM5CGSCATMA1 4,468
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    Infineon Technologies AG IPG20N10S4L22ATMA1

    MOSFET 2N-CH 100V 20A 8TDSON
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    Ameya Holding Limited IPG20N10S4L22ATMA1 25,000
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