/20N10 Search Results
/20N10 Datasheets (14)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 20N10 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 | ||
| 20N100 | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 133.07KB | 1 | ||
| 20N100D2 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 | ||
| 20N100E2 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 | ||
SLP120N10G
|
Maplesemi | N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, 4.9mΩ typical RDS(on) at VGS = 10V, low Crss, fast switching, and 100% avalanche tested. | Original | ||||
JMTG320N10A
|
Jiangsu JieJie Microelectronics Co Ltd | N-channel enhancement mode power MOSFET with 100V drain-source voltage, 28A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V in a PDFN5x6-8L package. | Original | ||||
JMTQ320N10A
|
Jiangsu JieJie Microelectronics Co Ltd | 100V, 23A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 32mΩ at VGS=10V, available in PDFN3x3-8L package, designed for load switching, PWM, and power management applications. | Original | ||||
SLB120N10G
|
Maplesemi | N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, typical RDS(on) of 4.6mΩ at VGS = 10V, low input capacitance, and fast switching characteristics suitable for high-efficiency power management applications. | Original | ||||
CJAC20N10
|
JCET Group | CJAC20N10 N-Channel Power MOSFET with 100V drain-source voltage, 20A continuous drain current, ultra low RDS(on), high energy avalanche capability, and fast recovery drain-to-source diode for high voltage switching applications. | Original | ||||
NCEAP020N10LL
|
NCEPOWER | NCE AP020N10LL is an Automotive N-Channel Super Trench II Power MOSFET with 100 V drain-source voltage, 330 A continuous drain current, 1.5 mΩ typical RDS(on) at VGS = 10 V, and 175 °C maximum operating temperature. | Original | ||||
JMTC320N10A
|
Jiangsu JieJie Microelectronics Co Ltd | N-channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 30A continuous drain current, and RDS(on) less than 32mΩ at VGS=10V in TO-220C package. | Original | ||||
JMTI320N10A
|
Jiangsu JieJie Microelectronics Co Ltd | N-channel enhancement mode power MOSFET with 100V drain-source voltage, 30A continuous drain current, and low on-resistance of 32mΩ at VGS=10V, available in TO-251-4R package. | Original | ||||
SL20N10
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SLKOR | Original | |||||
JMTK320N10A
|
Jiangsu JieJie Microelectronics Co Ltd | N-channel Enhancement Mode Power MOSFET JMTK320N10A with 100V drain-source voltage, 30A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V, available in TO-252-3L package. | Original |
/20N10 Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPB020N10N5LFATMA1MOSFET N-CH 100V 176A TO263-3 |
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IPB020N10N5LFATMA1 | Tape & Reel | 36,000 | 1,000 |
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IPB020N10N5LFATMA1 | Tape & Reel | 13,000 | 8 Weeks | 1,000 |
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IPB020N10N5LFATMA1 | Cut Tape | 257 | 1 |
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IPB020N10N5LFATMA1 | 9 Weeks | 1,000 |
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|
IPB020N10N5LFATMA1 | 6,500 |
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Infineon Technologies AG IPG20N10S4L35ATMA1MOSFET 2N-CH 100V 20A 8TDSON |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPG20N10S4L35ATMA1 | Digi-Reel | 25,975 | 1 |
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| IPG20N10S4L35ATMA1 | Cut Tape | 25,975 | 1 |
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| IPG20N10S4L35ATMA1 | Tape & Reel | 20,000 | 5,000 |
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IPG20N10S4L35ATMA1 | 211,430 | 1 |
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IPG20N10S4L35ATMA1 | 27 Weeks | 5,000 |
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Infineon Technologies AG IPT020N10N3ATMA1MOSFET N-CH 100V 300A 8HSOF |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPT020N10N3ATMA1 | Digi-Reel | 8,297 | 1 |
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| IPT020N10N3ATMA1 | Cut Tape | 8,297 | 1 |
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| IPT020N10N3ATMA1 | Tape & Reel | 8,000 | 2,000 |
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IPT020N10N3ATMA1 | Tape & Reel | 34,000 | 15 Weeks | 2,000 |
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IPT020N10N3ATMA1 | 1,052 |
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IPT020N10N3ATMA1 | Cut Tape | 3,950 | 1 |
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IPT020N10N3ATMA1 | 33,563 | 1 |
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IPT020N10N3ATMA1 | 1 |
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IPT020N10N3ATMA1 | 16 Weeks | 2,000 |
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|
IPT020N10N3ATMA1 | 1,910 |
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Infineon Technologies AG IPG20N10S4L35AATMA1MOSFET 2N-CH 100V 20A 8TDSON |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IPG20N10S4L35AATMA1 | Digi-Reel | 3,030 | 1 |
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| IPG20N10S4L35AATMA1 | Cut Tape | 3,030 | 1 |
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IPG20N10S4L35AATMA1 | 8,246 | 1 |
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Infineon Technologies AG IPB120N10S403ATMA1MOSFET N-CH 100V 120A D2PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB120N10S403ATMA1 | Cut Tape | 1,149 | 1 |
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| IPB120N10S403ATMA1 | Digi-Reel | 1,149 | 1 |
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| IPB120N10S403ATMA1 | Tape & Reel | 1,000 | 1,000 |
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IPB120N10S403ATMA1 | Cut Tape | 124 | 1 |
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IPB120N10S403ATMA1 | 1,698 | 1 |
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IPB120N10S403ATMA1 | 10 Weeks | 1,000 |
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