/20N50 Search Results
/20N50 Datasheets (12)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 20N50 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50C1 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50C1D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50C1D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50E1 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50E1D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
20N50A
|
AK Semiconductor | 20A500V N-channel enhancement mode MOSFET with 20A continuous drain current, 500V drain-source voltage, 0.21 ohm typical on-resistance at 10V gate-source voltage, and low gate charge, available in TO-220F, TO-247, and TO-247S packages. | Original | ||||
SLP_F20N50S
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Maplesemi | 20A, 500V N-channel MOSFET with 185mΩ RDS(on) at VGS = 10V, low gate charge of 40nC, and 37W power dissipation in TO-220 package. | Original | ||||
SLF20N50C
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Maplesemi | 500V N-channel MOSFET with 20A continuous drain current, 200mΩ typical RDS(on) at VGS=10V, low gate charge of 90nC, and 33pF Crss, suitable for high-efficiency switching power conversion applications. | Original | ||||
SLF20N50S
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Maplesemi | 500V N-channel MOSFET with 20A continuous drain current, 185mΩ typical RDS(on) at VGS = 10V, low gate charge of 40nC, and fast switching performance for high-efficiency power applications. | Original | ||||
SLH_W20N50S
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Maplesemi | 500V N-Channel MOSFET with 20A continuous drain current, 185mΩ RDS(on) at VGS = 10V, low gate charge of 40nC, and 250W power dissipation capability in TO-247 or TO-3P package. | Original | ||||
MDD20N50F
|
Microdiode Semiconductor | 500V N-Channel Enhancement Mode MOSFET, VDS 500V, ID(Tc=25°C) 20A, RDS(on),max 0.29Ω@VGS=10V, Qg,typ 50.5nC, TO-220F-3L. | Original |
/20N50 Price and Stock
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TTM Technologies BD60120N50100AHFBALUN 5.9GHZ-11.7GHZ 50/100 0404 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BD60120N50100AHF | Digi-Reel | 9,508 | 1 |
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BD60120N50100AHF | 11,166 |
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BD60120N50100AHF | 20,000 | 16 Weeks | 4,000 |
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onsemi FDPF20N50FTMOSFET N-CH 500V 20A TO220F |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDPF20N50FT | Tube | 1,276 | 1 |
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FDPF20N50FT | 1,219 |
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FDPF20N50FT | Bulk | 150 |
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FDPF20N50FT | 121 | 1 |
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FDPF20N50FT | 1,000 |
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FDPF20N50FT | 11 Weeks | 1,000 |
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FDPF20N50FT | 12 Weeks | 1,000 |
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FDPF20N50FT | 950 |
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onsemi FDP20N50FMOSFET N-CH 500V 20A TO220-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDP20N50F | Tube | 1,055 | 1 |
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FDP20N50F | 7,333 |
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FDP20N50F | Bulk | 152 | 1 |
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FDP20N50F | 94 | 1 |
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FDP20N50F | 1,000 |
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FDP20N50F | 9 Weeks | 1,000 |
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FDP20N50F | 1,000 | 10 Weeks | 1,000 |
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FDP20N50F | 11 Weeks | 1,000 |
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FDP20N50F | 1,180 |
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Vishay Intertechnologies SIHA20N50E-E3MOSFET N-CH 500V 19A TO220 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHA20N50E-E3 | Tube | 994 | 1 |
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SIHA20N50E-E3 | Bulk | 1 |
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SIHA20N50E-E3 | Bulk | 112 | 1 |
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SIHA20N50E-E3 | Tube | 1,000 |
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SIHA20N50E-E3 | 19 Weeks | 50 |
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Cal-Chip Electronics CHV2220N500102FCTHVCAP2220 COG 1000PF 1% 500V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CHV2220N500102FCT | Cut Tape | 990 | 1 |
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