/20N50 Search Results
/20N50 Datasheets (12)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 20N50 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50C1 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50C1D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50C1D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50E1 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50E1D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
20N50A
|
AK Semiconductor | 20A500V N-channel enhancement mode MOSFET with 20A continuous drain current, 500V drain-source voltage, 0.21 ohm typical on-resistance at 10V gate-source voltage, and low gate charge, available in TO-220F, TO-247, and TO-247S packages. | Original | ||||
SLP_F20N50S
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Maplesemi | 20A, 500V N-channel MOSFET with 185mΩ RDS(on) at VGS = 10V, low gate charge of 40nC, and 37W power dissipation in TO-220 package. | Original | ||||
SLF20N50C
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Maplesemi | 500V N-channel MOSFET with 20A continuous drain current, 200mΩ typical RDS(on) at VGS=10V, low gate charge of 90nC, and 33pF Crss, suitable for high-efficiency switching power conversion applications. | Original | ||||
SLF20N50S
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Maplesemi | 500V N-channel MOSFET with 20A continuous drain current, 185mΩ typical RDS(on) at VGS = 10V, low gate charge of 40nC, and fast switching performance for high-efficiency power applications. | Original | ||||
SLH_W20N50S
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Maplesemi | 500V N-Channel MOSFET with 20A continuous drain current, 185mΩ RDS(on) at VGS = 10V, low gate charge of 40nC, and 250W power dissipation capability in TO-247 or TO-3P package. | Original | ||||
MDD20N50F
|
Microdiode Semiconductor (MDD) | Power Field-Effect Transistor | Original |
/20N50 Price and Stock
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onsemi FDP20N50FPower MOSFET, N-Channel, UniFETTM, FRFET?, 500 V, 20 A, 260 m?, TO-220 - Rail/Tube (Alt: FDP20N50F) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDP20N50F | Tube | 2,450 | 15 Weeks | 50 |
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FDP20N50F | 4,374 |
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FDP20N50F | Bulk | 114 | 1 |
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FDP20N50F | 127 | 1 |
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FDP20N50F | 15 Weeks | 1,000 |
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FDP20N50F | 16 Weeks | 50 |
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FDP20N50F | 150 | 17 Weeks | 50 |
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FDP20N50F | 1,180 |
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onsemi FDPF20N50TPower MOSFET, N-Channel, UniFETTM, 500V, 20A, 230 m?, TO-220F - Rail/Tube (Alt: FDPF20N50T) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDPF20N50T | Tube | 1,000 |
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| FDPF20N50T | Tube | 12 Weeks | 1,000 |
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FDPF20N50T | 7,176 |
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FDPF20N50T | 14 Weeks | 1,000 |
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FDPF20N50T | 13 Weeks | 50 |
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FDPF20N50T | 14 Weeks | 50 |
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FDPF20N50T | 1,356 |
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FDPF20N50T |
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onsemi FDA20N50-F109Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA20N50-F109) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDA20N50-F109 | Tube | 480 |
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FDA20N50-F109 | 20,081 | 1 |
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FDA20N50-F109 | 426 |
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FDA20N50-F109 | 4,255 |
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Kyocera AVX Components NB20N50104JBA- Tape and Reel (Alt: NB20N50104JBA) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NB20N50104JBA | Tape & Reel | 18 Weeks | 3,000 |
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NB20N50104JBA | Cut Tape | 3,720 | 5 |
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| NB20N50104JBA | Tape & Reel | 3,720 | 100 |
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NB20N50104JBA | Bulk | 5 |
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NB20N50104JBA | Reel | 3,000 |
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NB20N50104JBA | Tape & Reel | 9,000 | 20 Weeks | 3,000 |
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NB20N50104JBA | 20 Weeks | 3,000 |
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Vishay Intertechnologies IRFB20N50K- Tape and Reel (Alt: IRFB20N50K) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFB20N50K | Tape & Reel | 1,000 |
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IRFB20N50K | 950 |
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