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04BEEG3F
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Delta Electronics
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DUAL-FUSE CONNECTOR FILTERS |
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327.7KB |
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04BEEG3FM
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Delta Electronics
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DUAL-FUSE IEC INLET FILTERS |
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249.84KB |
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04BEEG3FM-R
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Delta Electronics
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Power Entry Connectors - Inlets, Outlets, Modules - Filtered, Connectors, Interconnects, FUSE CONN FILTER 4A 115/250VAC |
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04BEEG3F-R
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Delta Electronics
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Power Entry Connectors - Inlets, Outlets, Modules - Filtered, Connectors, Interconnects, FUSE CONN FILTER 4A 115/250VAC |
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PDF
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1 |
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04BEEG3H
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Delta Electronics
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FUSE CONNECTOR FILTERS |
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57.71KB |
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04BEEG3S
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Delta Electronics
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57.71KB |
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04BEEG3SA
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Delta Electronics
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57.71KB |
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SMF304B
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SUNMATE electronic Co., LTD
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3.0A surface mount fast recovery rectifier diodes in SMB/DO-214AA package with 50V to 1000V peak repetitive reverse voltage, low forward voltage drop, and glass passivated die construction for high efficiency and reliability. |
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SMH204B
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SUNMATE electronic Co., LTD
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Surface mount ultra-fast rectifier diodes in SMB/DO-214AA package, 2.0A average rectified output current, 50 to 1000V peak repetitive reverse voltage, low forward voltage drop, glass passivated junction, rated for operating temperatures from -50 to +150°C. |
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HFM304B
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SUNMATE electronic Co., LTD
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Surface mount ultra-fast recovery rectifier diodes in SMB package, rated for 3.0 A average forward current, with peak repetitive reverse voltage from 50 to 1000 V, low forward voltage drop, and glass passivated die construction. |
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JMTC60N04B
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 60A N-channel enhancement mode power MOSFET with RDS(on) less than 7.7mΩ at VGS=10V, advanced trench technology, low gate charge, suitable for load switch, PWM, and power management applications. |
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JMSH1004BGWQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in PDFN5x6-8L-W package with 3.6 mΩ RDS(ON) at 10V VGS, 152A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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SMF204B
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SUNMATE electronic Co., LTD
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Surface mount fast recovery rectifier diodes in SMB/DO-214AA package, 50 to 1000V repetitive reverse voltage, 2.0A average rectified current, low forward voltage drop, glass passivated junction, operating temperature -50 to +150°C. |
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PDF
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JMTG60N04B
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 50A N-channel Enhancement Mode Power MOSFET with RDS(ON) < 7.9mΩ at VGS = 10V, available in PDFN5x6-8L package, designed for load switching, PWM applications, and power management. |
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JMSH1004BE
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel power MOSFET with 3.7 mOhm typical RDS(ON) at 10V VGS, 134A continuous drain current, available in TO-220-3L and TO-263-3L packages. |
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JMSH1004BC
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel power MOSFET with ultra-low RDS(ON) of 3.7 mΩ at VGS = 10V, continuous drain current of 134A, low gate charge, and 100% UIS tested, suitable for power management, motor driving, and switching applications. |
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SMH304B
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SUNMATE electronic Co., LTD
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Surface mount ultra-fast rectifier diodes in SMB/DO-214AA package, 3.0A average forward current, 50 to 1000V repetitive peak reverse voltage, low forward voltage drop, glass passivated junction, designed for high-efficiency power rectification. |
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SK104B/SK104C
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Microdiode Semiconductor
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Surface mount Schottky barrier rectifier, 20-200V, 10.0A, 94V-0, metal silicon, low loss, high efficiency, built-in strain relief, high surge, withstands 250°C/10s soldering. |
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JMTQ60N04B
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 40A N-channel enhancement mode power MOSFET with RDS(ON) less than 8.6mΩ at VGS = 10V, available in PDFN3x3-8L package, designed for load switching, PWM applications, and power management. |
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JMTK60N04B
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 60A N-channel Enhancement Mode Power MOSFET in TO-252-3L package with RDS(ON) less than 7.0mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested for reliable power management applications. |
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SMF304B
