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002A
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Essentra Components
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TAPERED CAP - OD RANGE: 4.4 - 6. |
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4.78MB |
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002A011-3-0
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TE Connectivity
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Uncategorized - Miscellaneous - STD POLY MOLDED PARTS |
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150.62KB |
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JMSH1002AC
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET with 1.6 mW typical RDS(ON) at VGS = 10V, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, high current capability, and 100% UIS tested reliability. |
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CBM9002A-100TIG
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COREBAI
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Enhanced 8051-based USB microcontroller supporting high-speed (480 Mbps) and full-speed (12 Mbps) USB 2.0, with 16 KB on-chip RAM, 48/24/12 MHz CPU, integrated FIFO, PIF, UART, I2C, and up to 40 GPIOs in a 100-pin package. |
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DIO7002A
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Dioo Microcircuits Co Ltd
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5.5V, 2.5A low-loss power distribution switch with 70 mΩ on-resistance, programmable current limit, overcurrent and thermal protection, reverse blocking, in SOT23-5 package. |
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JMSH1002APS
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET with 1.9 mΩ typical RDS(ON) at 10V VGS, 287A continuous drain current, TO-247PS-3L package, suitable for power management, motor driving, and switching applications. |
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CBM9002A-56SCG
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COREBAI
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Enhanced 8051-based USB microcontroller with high-speed (480 Mbps) and full-speed (12 Mbps) USB 2.0 support, 16 KB on-chip RAM, 0.5 KB data RAM, integrated FIFO, PIF interface, 3 timers, 2 UARTs, I2C, and GPIO, operating at 48/24/12 MHz. |
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2N7002AK
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AK Semiconductor
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N-channel enhancement MOSFET in SOT-23 package with 60 V drain-source voltage, 200 mA continuous drain current, and low on-resistance of 2.8 ohms at 10 V gate-source voltage. |
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SM4002A
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SUNMATE electronic Co., LTD
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Surface mount silicon rectifier diodes in SMA package, 1.0 A average forward current, 50 to 1000 V peak reverse voltage, low forward voltage drop, designed for surface mounted applications. |
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JMTR3002A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 100A N-channel Enhancement Mode Power MOSFET in DFN3333-8L package with RDS(ON) less than 3.0mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS and ΔVds tested. |
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CBM9002A-56LCG
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COREBAI
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Enhanced 8051-based USB microcontroller with high-speed (480 Mbps) and full-speed (12 Mbps) USB 2.0 support, 16 KB on-chip RAM, 0.5 KB data RAM, integrated FIFO, PIF interface, 3 timers, 2 UARTs, I2C, and GPIO, operating at 48/24/12 MHz.Enhanced 8051-based USB microcontroller supporting high-speed (480 Mbps) and full-speed (12 Mbps) USB 2.0, with 16 KB on-chip RAM, 48/24/12 MHz CPU, integrated FIFO, PIF, UART, I2C, and up to 40 GPIOs in a 100-pin package. |
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CBM9002A-56ISG
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COREBAI
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Enhanced 8051-based USB microcontroller with high-speed (480 Mbps) and full-speed (12 Mbps) USB 2.0 support, 16 KB on-chip RAM, 0.5 KB data RAM, integrated FIFO, PIF interface, 3 timers, 2 UARTs, I2C, and GPIO, operating at 48/24/12 MHz. |
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JMSH1002AS
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel power MOSFET with 1.7 mΩ typical RDS(ON) at 10V VGS, 314A continuous drain current, TO-247-3L package, suitable for power management and motor driving applications. |
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AK2N7002A
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK2N7002A with 60V drain-source voltage, 0.115A continuous drain current, RDS(ON) less than 3.5 ohms at VGS = 5V, available in SOT-23 surface mount package. |
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CBM9002A-56ILG
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COREBAI
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Enhanced 8051-based USB microcontroller with high-speed (480 Mbps) and full-speed (12 Mbps) USB 2.0 support, 16 KB on-chip RAM, 0.5 KB data RAM, integrated FIFO, PIF interface, 3 timers, 2 UARTs, I2C, and GPIO, operating at 48/24/12 MHz. |
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CBM9002A-100TCG
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COREBAI
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Enhanced 8051-based USB microcontroller with high-speed (480 Mbps) and full-speed (12 Mbps) USB 2.0 support, 16 KB on-chip RAM, 0.5 KB data RAM, integrated FIFO, PIF interface, 3 timers, 2 UARTs, I2C, and GPIO, operating at 48/24/12 MHz. |
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JMSH1002AEQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 350A, 1.6mΩ N-channel Power MOSFET in TO-263-3L package, featuring low gate charge, ultra-low on-resistance, and AEC-Q101 qualification for automotive applications. |
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JMSH1002AE
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET with 1.6 mW typical RDS(ON) at VGS = 10V, 271A maximum continuous drain current, available in TO-220-3L and TO-263-3L packages, suitable for power management and motor driving applications. |
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8002A
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IDCHIP
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3W single-channel audio power amplifier with shutdown mode, AB class, SOP8 package, 2.2V to 5.5V operating voltage, up to 3W output power at 4 ohms, THD+N less than 1%, fixed gain stable, external gain adjustable. |
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JMSH1002AC
