/-02V Search Results
/-02V Datasheets (12)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
GD32E502VBT3
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GigaDevice Semiconductor (Beijing) Inc | 32-bit, Cortex-M33, 100 MHz, 384 KB Flash, 48 KB SRAM, 2.7-5.5 V, -40 to +125 °C, 2x 12-bit ADC, DAC, comparator, timers, comm. interfaces, low power. | Original | ||||
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GD32E502VCT7
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GigaDevice Semiconductor (Beijing) Inc | 32-bit, Arm Cortex-M33, 100 MHz, 384 KB Flash, 48 KB SRAM, 2.7-5.5 V, -40 to +125°C, 2x12-bit ADC, DAC, comparator, 16-bit timer, 2x basic, 4x PWM, 2x SPI, 2x I2C, 3x USART, I2S, 2x CAN, TRIGSEL, MFCOM, DMAMUX. | Original | ||||
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GD32E502VDT3
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GigaDevice Semiconductor (Beijing) Inc | 32-bit, Cortex®-M33, 100 MHz, 384 KB Flash, 48 KB SRAM, 2x12-bit ADC, DAC, comparator, timers, PWM, SPI, I2C, USART, I2S, CAN, 2.7-5.5 V, -40 to +125 °C. | Original | ||||
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BAR64-02V
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Shikues Semiconductor | VR150V, IF100mA, RθJS85°C/W, Tj-55~+150°C, TSTG-55~+150°C, VR=150V, IF=50mA, IR=10μA, Cd1=0.4pF, Cd2=0.55pF, Cd3=0.35pF, rD=9Ω, 6.5Ω, 2.5Ω, PD150mW. | Original | ||||
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GD32E502VBT7
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GigaDevice Semiconductor (Beijing) Inc | 32-bit MCU, Cortex-M33, 100 MHz, 384 KB Flash, 48 KB SRAM, 2x12-bit ADC, DAC, comparator, 2xSPI, 2xI2C, 3xUSART, I2S, 2xCAN, 2.7-5.5 V, -40 to +125 °C. | Original | ||||
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ACJT02V-800SW
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Jiangsu JieJie Microelectronics Co Ltd | 2A TRIAC in SOT-223 package with 800V repetitive peak off-state and reverse voltage, suitable for AC switching applications including heating control, motor starting, and phase control, featuring integrated TVS structure for surge protection. | Original | ||||
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ACJT02V-1000SW
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Jiangsu JieJie Microelectronics Co Ltd | 2A TRIAC in SOT-223 package with 1000V repetitive peak off-state voltage, suitable for AC switching applications including heating control, motor starting, and phase control, featuring integrated TVS structure for surge protection. | Original | ||||
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2N7002V
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JCET Group | Dual N-channel MOSFET in SOT-563 package with 60 V drain-source voltage, 115 mA drain current, low on-resistance of 2.5 ohms at 10 V gate voltage, and fast switching speed for load switch and DC/DC converter applications. | Original | ||||
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JST02V-800SW
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Jiangsu JieJie Microelectronics Co Ltd | 2 A TRIAC in SOT-223 package with 800 V repetitive peak off-state voltage, suitable for general purpose AC switching, phase control, and inductive loads, RoHS compliant. | Original | ||||
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GD32E502VCT3
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GigaDevice Semiconductor (Beijing) Inc | 32-bit MCU, Cortex-M33, up to 100 MHz, 384 KB Flash, 48 KB SRAM, two 12-bit ADCs, DAC, comparator, 2.7-5.5 V, –40 to +125 °C. | Original | ||||
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JST02V-1000SW
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Jiangsu JieJie Microelectronics Co Ltd | 2 A TRIAC in SOT-223 package with 1000 V repetitive peak off-state voltage, suitable for general purpose AC switching, phase control, and inductive loads, featuring snubberless operation and direct MCU I/O drive capability. | Original | ||||
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GD32E502VDT7
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GigaDevice Semiconductor (Beijing) Inc | 32-bit MCU, Arm Cortex-M33, 100 MHz, 384 KB Flash, 48 KB SRAM, 2x 12-bit ADC, DAC, comparator, timers, PWM, SPI, I2C, USART, I2S, CAN, 2.7-5.5 V, -40 to +125 °C. | Original |
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Vishay Semiconductors VESD01C1-02VHG3-08TVS DIODE 1VWM 6.9VC SOD523 |
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VESD01C1-02VHG3-08 | Cut Tape | 34,711 | 1 |
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INPAQ Technology Co Ltd CES10402V05B0DGTVS DIODE 5VWM 30VC 0402 |
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Vishay Semiconductors VESD12C1-02V-G3-08TVS DIODE 12VWM 22.7VC SOD523 |
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Infineon Technologies AG BBY6602VH6327XTSA1DIODE VARACTOR 12V SGL PG-SC79-2 |
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TE Connectivity 2MM-HB-D02-VT-02-H-TB4P, AMPMODU 2 MM, BREAKAWAY HEAD |
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2MM-HB-D02-VT-02-H-TB |
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2MM-HB-D02-VT-02-H-TB | 10,240 | 1 |
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