*T4 MARKING Search Results

marking T4

Abstract: T4 MARKING mark t4 *T4 MARKING
Contextual Info: SEMICONDUCTOR PF0165UDF8 MARKING SPECIFICATION UDFN-8 PACKAGE 1. Marking method Laser Marking T4 1 No. 0A 2. Marking 2 Item Marking Description Device Mark T4 PF0165UDF8 * Lot No. 0A 2007. 1st Week [0:1st Character, A:2nd Character] Note * Lot No. marking method

V6 marking code

Abstract: C166 "Analog Devices" SAB 80C166W-MT3
Contextual Info: Microcontroller Components Errata Sheet December 23, 1998 / Release 1.2 Device: SAB 83C166W-5M SAB 83C166W-5M-T3 SAB 83C166W-5M-T4 SAB 80C166W-M SAB 80C166W-M-T3 SAB 80C166W-M-T4 Stepping Code / Marking: ES-DC, DC Package: MQFP-100 This Errata Sheet describes the deviations from the current user documentation. The

triac ST T4 1060

Abstract: ST T4 1060 A1A2G Triac T435 T410-xxxW T435-XXXH T405-XXXW T435 70 T405 T410
Contextual Info: T4 Series 4A TRIACS SNUBBERLESS & LOGIC LEVEL MAIN FEATURES: A2 Symbol Value Unit IT RMS 4 A VDRM/VRRM 600 to 800 V IGTT (Q1) 5 to 35 G A1 A2 A2 mA A1 A2 G A1 A2 G DPAK (T4-B) DESCRIPTION Based on ST’s Snubberless / Logic level technology providing high commutation performances, the

triac ST T4 1060

Abstract: ST T4 1060 T435-XXXH A1A2G triac ST T4 1060 c T4xx-yyyH Triac T435 T405 T410 T435
Contextual Info: T4 Series 4A TRIACS SNUBBERLESS & LOGIC LEVEL MAIN FEATURES: A2 Symbol Value Unit IT RMS 4 A VDRM/VRRM 600 to 800 V IGTT (Q1) 5 to 35 G A1 A2 A2 mA A1 A2 G A1 A2 G DPAK (T4-B) DESCRIPTION Based on ST’s Snubberless / Logic level technology providing high commutation performances, the

88c166

Abstract: 80C166 80C166W C166 TCL service manual
Contextual Info: Microcontroller Components Errata Sheet December 23, 1998 / Release 1.1 Device: SAB 80C166W-M SAB 80C166W-M-T3 SAB 80C166W-M-T4 Stepping Code / Marking: ES-DA, DA Package: MQFP-100 This Errata Sheet describes the deviations from the current user documentation. The

Contextual Info: IMT4FRA IMT4 Transistors AEC-Q101 Qualified General purpose dual transistors IMT4 IMT4FRA 0.3Min. ROHM : SMT6 EIAJ : SC-74 JEDEC : SOT-457 3000 1.1 0.8 SMT6 T4 T108 Marking Code Basic ordering unit (pieces) 0~0.1 Package 2.8 0.15 IMT4 IMT4FRA 0.95 0.95 1.9

80c166-m-t3

Abstract: SAB 80C166-M CB 80c166-m 80C166-M-T4 V6 marking code 80C166 C166 C16x Family Instruction Set Manual
Contextual Info: Microcontroller Components Errata Sheet December 23, 1998 / Release 1.1 Device: SAB 80C166-M SAB 80C166-M-T3 SAB 80C166-M-T4 SAB 80C166-M25 Stepping Code / Marking: ES-DA, DA Package: MQFP-100 This Errata Sheet describes the deviations from the current user documentation. The

marking K7 DIODE

Abstract: 15X15 SC017 SC017-2 SC017-4
Contextual Info: SC017 i .OA : Outline Drawings k _ GENERAL USE RECTIFIER DIODE : Features ESD-Proof • * B S 8* A f » m Surface m ount device •K « « t4 i/jv : Marking High reliability • Applications • V iS ftd fE O H General purpose rectifier applications

MJD44H11T4

Abstract: MJD44H11 MJD45H11 MJD45H11T4
Contextual Info: MJD44H11 MJD45H11 Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 DPAK power package in tape and reel (suffix "T4") TAB2 3 Applications ■ Power amplifier ■ Switching circuits

MJD44H11T4-A

Abstract: MJD44H11 MJD45H11
Contextual Info: MJD44H11T4-A MJD45H11T4-A Complementary power transistors Features . • The devices are qualified for automotive application ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 DPAK power package in tape and reel (suffix "T4")

WT24-2X460

Abstract: WT24-2X260 wt24-2 WT24 wt24 ex-i EN60947-5-6 60947-5-6 wt24-2x
Contextual Info: DESCRIPTION Dimensional drawing Photoelectric proximity switches Infrared light 100.2000 mm TECHNICAL WT24-2Exi Adjustment possible WT24-2X260 WT24-2X460 n Marking: n n n n n 1 2 3 4 5 6 7 8 9 10 II 2G EEx ia IIC T4 according to Directive 94/9/EC ATEX

VC-K-KV-PG21-O

Contextual Info: Extract from the online catalog VC-K-T4-Z Order No.: 1852969 The illustration shows version VC-K-T3-Z Plastic sleeve housing, locking screws with cylindrical head, type 4, cable screw connection Pg21

DIODE T4 marking

Abstract: smd diode marking T4 diode smd marking T4 transistor smd code marking 102 T4 diode smd diode marking T4 diode MARKING CODE T4
Contextual Info: BB133WS VHF VARIABLE CAPACITANCE DIODE Features • Excellent linearity • Very small plastic SMD package • Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 T4 Applications • Electronic tuning in VHF television tuners, band B up to 460 MHz

D200

Contextual Info: Extract from the online catalog VC-K-T4-R Order No.: 1855128 The illustration shows version VC-K-T3-R Plastic sleeve housing, locking screws with knurled head, type 4, cable screw connection Pg21

marking T4

Contextual Info: Extract from the online catalog VC-MP-T4-Z Order No.: 1884924 The illustration shows version VC-MP-T3-Z Metal sleeve housing, powder-coating, locking screws with cylindrical head, type 4, cable screw connection Pg21

Contextual Info: SO T4 57 PMN70XPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: MIEB 101H1200EH IGBT Module H Bridge VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101H1200EH 13, 21 D1 1 T1 D2 9 T2 10 2 19 E72873 15 D3 3 T3 D4 11 T4 12 4 14, 20 Features: + • SPT IGBT technology • low saturation voltage

Contextual Info: BILT 4 Nobel Weighing Systems Transducer Transmitter FEATURES • ATEX approved EEx ia IIC T4 • IP67 • Well protected enclosure • Two wires transmitter DESCRIPTION APPLICATIONS BILT 4 is a two wire current loop transmitter designed for industrial applications by means of strain gage transducers.

Contextual Info: PSE EX 16 Metal Line Switches www.schurter.com/pg70 Piezo Switch for Explosive Environments PSE M16 EX PSE M16 EX red anodized Description - Piezo switch certified according to ATEX category II 2 G Ex ib IIB T4 - Assembly by mounting with nut - Pins, Crimp Terminal male, AMP

PBSS4350D

Abstract: PBSS5350D
Contextual Info: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 5 — 23 March 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

MIEB101W1200EH

Abstract: 101W1200EH
Contextual Info: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • SPT IGBT technology

Contextual Info: Model 614 Tedea-Huntleigh Tension Compression Load Cell FEATURES • Capacities 50–500 kg • Anodized aluminum construction • OIML R60 approved • IP67 protection • For use in tension or compression • 6 wire sense circuit • Optional ❍❍ EEx ia IIC T4 hazardous area approval

Contextual Info: Model 1252 Tedea-Huntleigh Aluminum Single-Point Load Cell FEATURES • Capacity range: 75–635 kg • Aluminum construction • Single-point 600 x 600 mm platform • OIML R60 • IP66 protection • Available with metric and UNC threads • Optional ❍❍ EEx ia IIC T4 hazardous area approval

Contextual Info: MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.