*1025 MOSFET Search Results

ERJ8GEYJ100V

Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
Contextual Info: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V

Cycle10s

Abstract: mode 5 IFF L-band RF MOSFET transistor AZ 1
Contextual Info: The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10 s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

ap3608

Abstract: ap3608E AP3039 SOIC-14 10V 3W LED DRIVER
Contextual Info: Application Note 1025 Design Consideration with AP3039 Prepared by Wei Feng System Engineering Dept. protection to limit the output voltage. The OVP voltage can be set through external resistors. If the output voltage is higher than the OVP high threshold point, it

GLF2012T

Abstract: GLF2012T100K R1218X R1218XXX1A R1218XXX2A R1218X031A
Contextual Info: R1218x SERIES Step-up DC/DC converter for Whilte LED Backlight NO.EA-006-1025 OUTLINE The R1218X Series are PWM control type step-up DC/DC converter ICs with low supply current. The R1218X is fully dedicated to drive White LED with constant current. Each of these ICs consists of an NMOS FET, an

C15VL

Contextual Info: DIXYS IGBT IXSH 25N100 Low V,CE sat vCES = 1000 V 1025 = 50 V CE(Sa„ = 3.5 V Short Circuit SOA Capability Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V CGR T j = 2 5 °C to 1 5 0 °C ;R GE=1 M ii 1000 V GES Continuous +20 V GEM Transient i3 0

2N4351

Contextual Info: SOLID STATE 3875081 01 DE I 3fl?SDfll D010T7? 01E G E S O LID STATE 10977 D T- 35'- 2 . r 2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch FEATURES ABSOLUTE MAXIMUM RATINGS • • • • • Ta = 25“C unless otherwise noted Drain-Source Voltage or Drain-Body V o lta g e .25V

2n4351

Abstract: mosfet 2n4351
Contextual Info: SOLID STATE 01 DE I 3fl?SDfll 01E 10977 T- 35*- 3875081 G E SOLID STATE D010T77 D 2. r * 2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch FEATURES ABSOLUTE MAXIMUM RATINGS • • • • • Ta = 25“C unless otherwise noted Drain-Source Voltage or Drain-Body V o lta g e .25V

marking code g2s

Contextual Info: SIEMENS < *,0 0 5 S Silicon N-Channel MOSFET Tetrode •For low-noise, high gain-controlled input stages up to 1GH; ■Operating voltage 5V 1Integrated stabilized bias network X AGC o HF oIn p u t JX-Ih D ra in G2 I HF O u tp u t + DC G1 1 — r GND ESD: Electrostatic discharge sensitive device, observe handling precaution!

Carbon dioxide

Abstract: simmer
Contextual Info: Superpulse NADA Electronics Leaders in Power Control of DC-switch mode power supplies specifically designed A torange meet the power requirements of low power carbon dioxide lasers for medical and industrial applications. Incorporating proprietary MOSFET technology, the 2000 series has

SP2110

Abstract: SP1110 SP6110
Contextual Info: INTERNATIONAL RECTIFIER bSE D • HflSSHSE O ü l b B S G ?ÔT H I N R Data Sheet No. PD-1.018B INTERNATIONA!. RECTIFIER E?R SERIES SP Microelectronic Power IC Relay ChipSwitch SIP Relay 1.0 Amp Free Standing 3.0 Amps (with Heat Management 20-280 v a c S’X Power IC Chips

Contextual Info: Product specification WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS V Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 20 0.036@ VGS=1.8V SOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench

WNM2025

Contextual Info: Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS V Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 20 0.036@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench

TO-254Z

Contextual Info: SFF55N20M SFF55N20Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 55 AMP N-Channel POWER MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/

Contextual Info: APT8065BVR A dvanced P o w er Te c h n o lo g y ' 800V 13A 0.650Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

diode 152

Abstract: BFC12
Contextual Info: IUI i^ E INI SEME BFC12 LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 11 e (0 463) VDSS Terminal 1 Terminal 3 Source 2* Gate Terminal 2 Terminal 4 Drain Source 1

mosfet 1026

Abstract: 1026 mosfet
Contextual Info: ERFS440A Advanced Power MOSFET FEATURES BVdss = 500 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VOS= 500V

HT0440LG

Abstract: 400V switching transistor HT0440 power supply 400v circuit diagram HT0440N4 HT04
Contextual Info: HT0440 Preliminary High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0440LG HT0440N4 Features General Description ±400V input to output isolation The Supertex HT0440 is a dual high voltage isolated driver

HT04

Contextual Info: HT0440 P relim ina ry High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0440LG HT0440N4 Features General Description □ +400V input to output isolation □ +700V isolation between outputs □

HT0440N

Abstract: HT04
Contextual Info: BACK HT0440 Preliminary High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0440LG HT0440N4 Features General Description ±400V input to output isolation The Supertex HT0440 is a dual high voltage isolated driver

Contextual Info: HT0440 S u p e r t e x i n c . Preliminary High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0440LG HT0440N4 Features General Description □ ±400V input to output isolation □ ±700V isolation between outputs

BFC12

Contextual Info: SEME BFC12 LAB 4TH GENERATION MOSFET SOT–227 Package Outline. Dimensions in mm inches 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) 2 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) Hex Nut M 4 (4 places) 4 .8 (0 .1 8 7 ) H= 4 .9 (0 .1 9 3 ) (4 places) R 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 )

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OSM-3 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm • 10V DRIVE • VDSS . 1 5 0 V • TDS ON (MAX) . 1 7 0 m Q

IRFP460

Abstract: IRFP460 IR diode sg 89a international rectifier NE 22 dioda rectifier
Contextual Info: PD-9.512B International S Rectifier IRFP460 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 5 0 0 V R DS on = 0 . 2 7 0

separately excited dc motor control

Abstract: variable frequency drive block diagram motor stop with mosfet of 24 volts 60 rpm dc motor three phase motor variable speed control circuit DC PM Motor Servo Amplifier japan servo co FED circuit diagram, variable speed drives separately excited dc motor separately excited motor
Contextual Info: Ordering number : EN 4873 Thick Film Hybrid IC STK6217 Unidirectional DC Motor Driver with Constant-Speed Digital Servo Controller output current: 8 A Overview The STK6217 is a hybrid IC that combines in a single package a unidirectional DC motor driver, a PLL