"ULTRA LOW GATE CHARGE" "ULTRA LOW ON RESISTANCE Search Results

Contextual Info: STS5N15M3 N-channel 150V - 45mΩ - 4.5A - SO-8 Ultra low gate charge MDmesh III Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID STS5N15M3 150V <0.057Ω 4.5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance

JESD97

Contextual Info: STSJ25N15M3 N-channel 150V - 45mΩ - 5A - PowerSO-8 Ultra low gate charge MDmesh™ III Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID STSJ25N15M3 150V <0.057Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance

MDMESH

Abstract: STS5N15M3 JESD97
Contextual Info: STS5N15M3 N-channel 150 V, 45 mΩ, 5 A, SO-8 ultra low gate charge MDmesh III Power MOSFET Features Type VDSS RDS on max ID STS5N15M3 150 V < 0.057 Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance ■

JESD97

Abstract: STS5N15M3
Contextual Info: STS5N15M3 N-channel 150 V, 45 mΩ, 5 A, SO-8 ultra low gate charge MDmesh III Power MOSFET Features Type VDSS RDS on max ID STS5N15M3 150 V < 0.057 Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance ■

68ro

Abstract: STV160NF03LA BSH5
Contextual Info: STV160NF03LA N-CHANNEL 30V - 0.0021Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF03LA VDSS RDS on ID 30 V < 0.003 Ω 160 A TYPICAL RDS(on) = 0.0021 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED VERY LOW GATE CHARGE

STV160NF03L

Contextual Info: STV160NF03L N-CHANNEL 30V - 0.0019Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF03L VDSS RDS on ID 30 V < 0.0028 Ω 160 A TYPICAL RDS(on) = 0.0019 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED VERY LOW GATE CHARGE

PI5101

Contextual Info: PI5101   RDS on FETTM Series 360μΩ, 5V/60A N-Channel MOSFET Product Summary Features Ultra Low “micro-Ohm” RDS(on) Extremely Low Gate Charge Very Low Gate Resistance High Density, Low Profile Very Low Package Inductance Low Thermal Resistance

55n10

Abstract: 75n05 OM55N10NK OM60N10NK OM75N05NK OM75N06NK
Contextual Info: OM55N1ÛNK OM75N05NK OM60N10NK OM75NQ6NK LOW VOLTAGE, LOW IN A TO-3 PACKAGE POWER MOSFETS R DS on 50V And 60V, Ultra Low Ros(on) Power MOSFETs In A TO-3 Package FEATURES • TO-3 Hermetic Package, .060 Dia. Leads • Ultra Low RDS(on) • Low Conductive Loss/Low Gate Charge

APT94N65B2C3

Abstract: APT94N65B2C3G APT94N65B2
Contextual Info: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D

Contextual Info: APT97N65B2C6 APT97N65LC6 650V 97A 0.041 APT97N65B2C6 COOLMOS Super Junction MOSFET Power Semiconductors T-Max TO-264 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated APT97N65LC6 • Extremedv/dt Rated

SIPC05N60S5

Abstract: transistor AI 232
Contextual Info: Preliminary SIPC05N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC05N60S5

SIPC69N60C2

Contextual Info: Preliminary SIPC69N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC69N60C2

SIPC26N60C2

Contextual Info: Preliminary SIPC26N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC26N60C2

SIPC10N60S5

Contextual Info: Preliminary SIPC10N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60S5

SIPC06N60S5

Abstract: Infineon CoolMOS
Contextual Info: Preliminary SIPC06N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC06N60S5

5423S

Abstract: SIPC06N60S5
Contextual Info: Preliminary SIPC06N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC06N60S5

SIPC03N60S5

Contextual Info: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5

SIPC05N60S5

Contextual Info: Preliminary SIPC05N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC05N60S5

SIPC03N60S5

Contextual Info: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5

SIPC14N60S5

Contextual Info: Preliminary SIPC14N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC14N60S5

Contextual Info: Preliminary SIPC10N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60S5

Contextual Info: OM55N1ÛNK OM75N05NK OM60N10NK OM75NQ6NK LOW VOLTAGE, LOW R DS on POWER MOSFETS IN A TO-3 PACKAGE 50V And 60V, Ultra Low RDS(on) Power MOSFETs In A TO-3 Package FEATURES • • • • TO-3 Hermetic Package, .060 Dia. Leads Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge

SIPC61N60S5

Contextual Info: Preliminary SIPC61N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC61N60S5

SIPC14N60C2

Abstract: 5363P
Contextual Info: Preliminary SIPC14N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC14N60C2