"THE CALCULATION OF THE POWER DISSIPATION FOR THE IGBT AND THE INVERSE DIODE IN Search Results

Wacker Silicones p12

Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits Fischer wlpf 50 semikron SKHI 22 AR skm100gb121d semikron SKHI 21 AR SKM200GB122D skm 100 gb 121d rifa semikron SKHI 21 AR application note
Contextual Info: 6. SEMITRANS IGBT Modules Insulated Gate Bipolar Transistor Modules Features Typical Applications • MOS input (voltage controlled) • Frequency converters for AC motor drives • N channel • DC servo and robot drives • Low saturation voltage series available

semikron skm 300 gar 123

Abstract: skm 300 gar skm 22 gal 123 SKM 300 GB 123 D 300GB-6 SKM 300 GB 12 V
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC

Contextual Info: s e M IKRO n Absolute Maximum Ratings Conditions ' Values VcES VcGR lc = 20 k£2 Tcase = 25/80 °C ICM Tcase = 25/80 °C; tp 1200 1200 1 0 0 /9 0 2 0 0 /1 8 0 ±20 690 150 125 2 500 Symbol Units Rge = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode

semikron SKm GAL 123D

Abstract: CASED61
Contextual Info: s e M IK R O n Absolute Maximum Ratings Symbol Conditions VcES VcGR lc Rge IC M Values Units ' 20 k £ 2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc IfM= - IcM Tcase = tp = 10 Ifsm

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" 5kw inverter circuit diagram pure sinus inverter circuit diagram the calculation of the power dissipation for the IGBT BSM25GP120 3 phase inverter 150 degree conduction mode wave IGBT inverter calculation IGBT JUNCTION TEMPERATURE CALCULATION D. Sraiber, W. Lukasch
Contextual Info: Power Integration with new Econo-PIM IGBT Modules Calculation of junction-temperatures for rectifier-diodes, IGBT’s and freewheeling-diodes in the PIM A. Schulz, N. Dittmann, M. Loddenkötter, Th. Schütze eupec, Max-Planck-Straße 5, 59581 Warstein M. Feldvoß

SKM 300 CIRCUIT

Abstract: SKM 400 gal 124 IGBT D 145 SKM 300 GB 123 D SKM 600 gb semikron skm 150 gb 123
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC

B697

Abstract: 10R-A10
Contextual Info: SEMIKRON Absolute Maximum Ratings Symbol VcES VcGR lc ICM VqeS Plot Tj. Ts* Visol humidity climate Rge = 20 k£i Tease = 25/80 “C Tease ~ 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC68T.1 Inverse Diode Tease = 25/80 C If= - lc

SKM 75 GAL 123 IGBT

Abstract: SKM 75 GB 123 SKM 380 skm 50 gb 100 d Semitrans* IGBT GAL 200 gb
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = 25/80 °C

skm 200 GB 12 V

Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC

Contextual Info: s e M IKRO n Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc Tcase = IfM= - IcM tp = 10

VQE 23D

Abstract: 6tv0 skm 40 gb 123 d
Contextual Info: se MIKROn Absolute Maximum Ratings Sym bol C onditions ' V ce S Vcon lc Icm V qes R ge - 20 kQ Tease = 25/80 C Tease = 25/80 “C; tp — 1 ms Plot Tj, Tstg Visot humidity climate per IG BT , Tease = 25 °C AC, 1 min. DIN 4 0 0 4 0 DIN I E C 6 6 T . 1 Inverse Diode

skm 152 ga 123

Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 152 ga SKM 300 CIRCUIT SKM 300 GA 102 D 1502C SKM 200 GB 102 D SKM 200 CIRCUIT skm 22 gal 123
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C

Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC

GAL 700

Abstract: 1002C skm 141
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC

SK 6211

Contextual Info: seMIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Pfot Tj, Tstg Visol humidity climate Values Conditions ' Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms p e r IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode

Contextual Info: s e MIKRO n Absolute Maximum Ratings Symbol Conditions * Values Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 7 5 /5 0 1 5 0 /1 0 0 ±20 390 - 4 0 . . .+150 125 2 500 Class F 40/125/56 Inverse Diode Tcase = 25/80 °C If= - lc Tcase = 25/80 °C; tp = 1 ms

VQE 12

Contextual Info: s e M IKR D n Absolute Maximum Ratings S ym bol s e m itr a n s m V a lu e s C ond itions ' U nits AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1700 1700 7 5 /5 0 14 4/10 0 ±20 500 - 4 0 . . ,+150 125 4000 Class F 55/150/56 Inverse Diode 81 Tease = 25/80 C If= - lc

Contextual Info: s e M IK R O n Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc ICM V ges Rge = 20 k£2 T c a s e = 25/80 °C T c a s e = 25/80 °C; tp = 1 ms P to t p e r IG B T , Tcase Units = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc

IEC 974-1

Abstract: SKM 400GB062D 195GB124DN 200gb 400GB062D 200GB123D 2119 SKM400GB123D 300GB174D 145GB123D
Contextual Info: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: IGCT 10 kw schematic induction heating "the calculation of the power dissipation for the igbt and the inverse diode in circuits" IGCT thyristor calculation of IGBT snubber snubber IGCT IEGT abb press-pack igbt igbt inverter schematic induction heating
Contextual Info: Positive development in power electronics New 5.2kV Extra Fast Recovery Diode for IGBT and IGCT Applications. New 5.2 kV Extra Fast Recovery Diode for IGBT and IGCT Applications A. Golland, F. J. Wakeman, G. Li Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK

Wf VQE 23 F

Abstract: WF VQE 23 D Wf VQE 23 E wf vqe 24 d WF vqe 24 e WF VQE 22 c WF VQE 22 d wf vqe 14 e wf vqe 24 f wf vqe 23
Contextual Info: 5EMIKR0N Absolute Maximum Ratings Symbol VcES VcGH lc ICM Vges P.o< Ti, Tag Visol humidity climate Values Conditions ' Rge = 20 k ii Tease = 25/80 "0 Tease ~ 25/80 C . tp — 1 ms per IGBT, Tease = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode

75AFC

Abstract: L56A b644 us25x
Contextual Info: s e m ik r d n A b s o l u t e M a x im u m R a t in g s Sym bol C onditions ' V ets VcGR lc IcM R ge = 20 k ii Tcase= 25/80 °C Tcase= 25/80 °C; tp — 1 ms V ges Ptot per Tj, Tag Visoi humidity climate IGBT, Tcase= 25 °C AC, 1min. D1N 40 040 DINIEC68T.1

skm 152 ga 123

Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56
Contextual Info: s e M IKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM Rge = 20 k£2 Tcase = 2 5 /8 0 °C Tcase = 2 5 /8 0 °C; tp = 1 ms per IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 6 8 T.1 Inverse Diode Tcase = 2 5 /8 0 °C If= - lc Tcase = 2 5 /8 0 C . tp = 1 ms

Contextual Info: s e MIKROn Absolute Maximum Ratings Symbol C onditions V a lu e s Units 1 AC, 1 min. DIN 40 040 DIN tEC 68 T.1 1200 1200 400 / 300 800 / 600 ±20 2500 - 4 0 . . .+150 125 2 500 ?) Class F 55/150/56 Inverse Diode I f = - lc Tease — 25/80 ! C Tease 25/80 :!Cj tp —1 nts