"T-75 A" HIGH VOLTAGE DIODES Search Results

Contextual Info: DSEI2X161-02A Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition)75# Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current V(RRM) (V) Rep.Pk.Rev. Voltage t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)

Contextual Info: BAS28 y V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icrominiature envelope intended fo r surface mounting. It concerns fast-switching general-purpose diodes. Q UICK REFERENCE D A T A VR max. 75 V Repetitive peak reverse voltage

BAW62

Abstract: FR 309 diode
Contextual Info: S ’ S’S - o z z . BAW62 HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a D O -35 envelope. The BAW 62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage

AAAQ

Abstract: N2 SOT23-6 mosfet n3 MAX4529 MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA
Contextual Info: 19-1262; Rev 0; 3/98 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off

Contextual Info: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off

1N4000 silicon diodes

Abstract: 1N4000 - 1N4007 1n4000 1n4000 a 1n4007
Contextual Info: 1N4001 . 1N4007 BY133. P513 FA G O R^ 1Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1.600 V. Ï ! to ; 1— il_ o\ Ç.35 58.5 Current 1.0 A. at 75°C. a t r0 .2 0.5 • Low cost • Diffused junction • High current capability

Contextual Info: 2?QLôMb 0000175 ^1T 1,500 to 20,000 Volts 0.6 to 3 Amps. Standard Recovery SERIES HD O \ 1/4-28 Thread Modular • "Hi-BeP High Voltage Rectifier Assemblies Repetitive Peak Reverse Voltage HVCA Number Vrhm V Volt8 Avg.Forward Current Max. If a v m @ T c 75*C

CIL 1302

Abstract: cil 1305
Contextual Info: T E L E D Y N E COMPONENTS a*U7fe.aa ÜOÜbt.75 3 EflE D ECONOMY LINE CURRENT REGULATOR FIELD EFFECT DIODES XCTP1U AiC CIL-1300 thru CIL-1305 c m • CURRENT CONSTANT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE • CONNECT IN PARALLEL FOR HIGHER CURRENT

Contextual Info: t.ME D • Sfi7bbSl OGDTV'îS 007 « N X n MAXIM I N T E G R A T E D P R O D U C T S 19-3786; Rav 1; 9/92 / l / l / I X I / l / l High-Speed, Low -Voltage, M icropow er Op Amps D escrip tio n The MAX402/MAX438 require less than 75|iA of supply current while delivering 2MHz gain bandw idth with 7V/|xs

Contextual Info: www.MICROSEMI.com UM4000 / UM4900 HIGH POWER PIN DIODES RoHS Compliant Versions Available DESCRIPTION K EY FEAT URES ABSOLU T E M AX I M U M RAT I N GS AT 2 5 º C U N LESS OT H ERWI SE SPECI FI ED Package Condition UM4000 PD (W) C D • Series resistance rated at 0.5

Contextual Info: t eccor e l e c t r o n i c s i n c \ •is dooiis? 3 5T|flä7aön r - i t - 2,3 S I A M C ? !# !! - The New Standard I If your electronic equipment is being protected by zener diodes, gas discharge tubes, MOV’s or other types of protectors, you are taking un­

1N4T48

Abstract: 1N5526B JANTX diode zener 3144 voltage 1N941 1N5283 diode zener 3144 1N4611A 1N3496 1N3497 1N3499
Contextual Info: C 0 D I SEMICONDUCTOR INC 2RE D 177S47G OGDGbSS b • C O D I M il 7=0 », 0°i c Silicon Diodes JEDEC REGISTERED TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES D O - 7 Package V o lta g e C u rre n t mA V o lts 62 62 64 6.4 64 64 65 66 66 66 8 4 8 5 85

1N4148 DL-35

Abstract: n4148 1N4148 DL-35 PACKAGE Diode N4148 DL4148 package DO-41 package 1N4148 R1200 R1200F R1500 R1800
Contextual Info: DIODES INC m 35E D 20407=53 ÜQ0Q3b0 T BiDII HIGH VOLTAGE RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE -6 5 °C to +150°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak Surge Current

Contextual Info: UM7000 / UM7100 / UM7200 HIGH POWER PIN DIODES TM RoHS Compliant Versions Available K EY FEAT U RES DESCRIPT ION • Voltage ratings to 1000V UM7000 • Average power dissipation to 10 W  Series resistance as low as 0.25 Ω  Carrier lifetime greater than 2.5 µs

IN827 Temperature Compensated Zener

Abstract: 1N4T48 IN4571 1N4611A 1N5306 JAN 1n829 noise diode zener 3144 voltage in4572 IN821 IN827
Contextual Info: C 0 D I SEMICONDUCTOR INC 2«iE D 1 7 7 5 4 7 0 0D0 CI L55 b B I C 0 D I Mi l ElSifl ni T -O U O °l c Silicon Diodes JEDEC REGISTERED TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES D O - 7 Package V o lta ge C u rre n t mA V o lts 62 62 64 6.4 64 64 65

Contextual Info: 7141130 □□□Oñfll S7T m P E I S3E D PICO ELECTRONICS INC Input-Low ProfHe'300'' s e r ie s m r Hi Reliability Ultra-Miniature Fully Regulated 2.5 W atts DC-DC CONVERTERS Isolated DC-DC Converters • Diodes JAN TX —55°C to +85°C • Transformers Manufactured to

Contextual Info: OM60L60SB OM50F60SB Preliminary Data Sheet OM45L120SB OM35F12QSB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 Amp IGBTs With FRED Diodes FEATURES • • • • • • • Includes Internal FRED Diode

CV7040

Abstract: cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE
Contextual Info: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7

diode G21

Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

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X2G75ND06P1

Contextual Info: X2G75ND06P1 HIGH POWER NPT Low loss TYPE 2-PACK IGBT MODULE • CIRCUIT DIAGRAM 600V 75A PACKAGE : M1 ■ APPLICATIONS ■ FEATURES • Non Punch Through g NPT Technology gy • Fast & soft inverse CAL diodes • 10us short circuit capability • Positive VCE(on) temperature coefficient

Contextual Info: 10-PZ126PA080MR-M909F28Y flow 3xPHASE-SiC 1200 V / 80 mΩ Features flow 0 12mm housing ● SiC-Power MOSFET´s and Schottky Diodes ● 3 phase inverter topology with split output ● Improved switching behavior reduced turn on energy and X-conduction ● Ultra Low Inductance with integrated DC-capacitors

nanosecond pulse generator

Abstract: GC2521 g8tb JVC 0J "step recovery diode" 1.7 pf GC2510 7S11 42nH step recovery diodes
Contextual Info: LO RA L fllCROUAVE-FSI SU D • 5 5 0 0 1 3 0 0 0 0 0 4 5 0 5T7 STEP RECOVERY DIODES DESCRIPTION APPLICATIONS The GC2500 series step recovery diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications.

X2G75RD06P1

Abstract: SMPS IC smps igbt
Contextual Info: X2G75RD06P1 HIGH POWER NPT Standard TYPE 2-PACK IGBT MODULE • CIRCUIT DIAGRAM 600V 75A PACKAGE : M1 ■ FEATURES ■ APPLICATIONS • Non Punch Through g NPT Technology gy • Fast & soft inverse CAL diodes • Positive VCE(on) temperature coefficient