"N-CHANNEL JFET", 350 V Search Results

TF202THC-4-TL-H

Abstract: TF202THC
Contextual Info: Ordering number : ENA1285B TF202THC N-Channel JFET http://onsemi.com 20V, 140 to 350 A, 1.0mS, VTFP Features • • • • • • Ultrasmall package facilitates miniaturization in end products Especially suited for use in electret condenser microphone for audio equipments and telephones

Contextual Info: Ordering number : ENA0842A TF252TH N-Channel JFET http://onsemi.com 20V, 140 to 350 A, 1.4mS, VTFP Features • • • • • • • High gain : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz Ultrasmall package facilitates miniaturization in end products

TF262TH-5-TL-H

Contextual Info: Ordering number : ENA1906A TF262TH N-Channel JFET http://onsemi.com 20V, 140 to 350 A, 0.95mS, VTFP Features • • • • • Low output noise voltage : VNO= -112dB typ. VCC=2V, RL=2.2kΩ, Cin=5pF Ultrasmall package facilitates miniaturization in end products : 1.4mm x 1.2mm × 0.34mm

ENA0944

Abstract: 2SK596S
Contextual Info: Ordering number : ENA0944 2SK596S N-Channel JFET http://onsemi.com 20V, 140 to 350 A, 1.0mS, SPA Features • • • • Low output noise voltage : VNO=-110dB max VCC=4.5V, RL=1kΩ, Cin=15pF, VIN=0V, A curve Especiallysuited for use in condenser microphone for audio equipments and telephones

Contextual Info: Ordering number : ENA0841B TF252 N-Channel JFET http://onsemi.com 20V, 140 to 350 A, 1.4mS, USFP Features • • • • • • • • High gain : GV=1.0dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz Ultrasmall package facilitates miniaturization in end products [1.0mmx0.6mm×0.27mm (max 0.3mm)]

U1715A

Abstract: U1715 016R
Contextual Info: öW bQH 2ÖE D T E L E D Y N E COMPONENTS QQObSfe.4 S • HIGH VOLTAGE U1715 U1715A U1715B N CHANNEL JFET GEOMETRY 1143 TO-39 Package BVDGO fo 400V 0 350 0 370,°|A - ~i 0 3 I | ÎdDI AI A | * . J 0335 0 240 0 009 0125 ? L J i t MAXIMUM RATINGS 25°C ♦

Ultra High Input Impedance N-Channel JFET Amplifier

Abstract: "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23
Contextual Info: LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1

tl084 LT

Abstract: HP 5082-4204 tl084 .000 HP5082-4204 tl072 output bridge tl074 tl084 HP-5082-4204 LT1058CN LF412A LT1057
Contextual Info: r r u JK k m n F r n i T EC H N O LO G Y Dual and Quad, JFET Input Precision High Speed Op Amps DCSCRIPTIOn F€flTUR€S • 14V/*is Slew Rate ■ SMHzGain-Bandwidth Product ■ Fast Settling Time ■ 150pcV Offset Voltage LT1057 ■ 180/iV Offset Voltage (LT1058)

pin configuration of ic TL084

Abstract: IC LF353 or TL072 Instrumentation Amplifier IC with tl084 tl084 LT hp 5082-4204 pin photodiode TL084 c 2238 Instrumentation Amplifier circuit using tl084 tl072 photodiode TL084 CN
Contextual Info: _ LT1057/LT1058 / T u i m TECHNOLOGY DCSCRIPTIOn F€flTUR€S • ■ ■ ■ ■ ■ ■ ■ 14V/*is Slew Rate SMHzGain-Bandwidth Product Fast Settling Time 150pcV Offset Voltage LT1057 180/iV Offset Voltage (LT1058) 2/iV/°C V0s Drift 50pA Bias Current at 70°C

hp 5082-4204 pin photodiode

Abstract: HP5082-4204 tl072 photodiode Instrumentation Amplifier circuit with tl084 LT1058CN HP-5082-4204 5082-4204 tl084 LT Instrumentation Amplifier circuit using tl084 tl074 tl084
Contextual Info: r r u n r n i J K k m F T E C H N O L O G Y 14V/*is Slew Rate SMHzGain-Bandwidth Product Fast Settling Time 150pcV Offset Voltage LT1057 180/iV Offset Voltage (LT1058) 2/iV/°C V0s Drift 50pA Bias Current at 70°C Low Voltage Noise 10V//tS Min. 1.3/ts to 0.02%

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET
Contextual Info: LLC 2002 Short Form Catalog ANALOG SOLUTIONS: Amplifiers & Buffers Power Management MOSFETs High Speed Lateral & Vertical DMOS Switches & MOSFETs JFETs MOSFET Drivers Custom Solutions Calogic LLC, 237 Whitney Place, Fremont, CA 94539 • http://www.calogic.net

Contextual Info: / T L in C A B TECHNOLOGY LT1057/LT1058 Dual and Q uad JFET Input Precision High Speed Op Amps D€SCRIPTIOn F€RTUR€S • 14V//iS Slew Rate ■ 5MHz Gain-Bandwidth Product ■ Fast Settling Time ■ 150/tV Offset Voltage LT1057 ■ 180/tV Offset Voltage (LT1058)

TL082

Abstract: TL082 PIN DIAGRAM tl082 equivalent TL082N TL082 op amp op tl082 TL082 schematic diagram absolute maximum ratings tl082 k 246 transistor fet TL-082
Contextual Info: T -3 u rw Y or ^ 006576 Product Specifications Linear Integrated Circuits TL082 Raytheon, _ S ing le TL082 Dual J-Fet Input Operational Amplifier Copy Handle With Care Description T he TL082 dual operational a m p lifie r has features such as w ell m atched high voltage

LT1055CN8

Abstract: LTC1152 op27 LT1256 0P-16E AX10H LM318 Op Amp IC LT1024 LT10140 LT318A
Contextual Info: OP AMPS Precision -r Dual Supply Zero Drift Zero Drift LTC10 4 7 0 , LT C10 4 9(S, LT C10 5 0(S, LTC1051 (D, LT C10 5 2(S, LTC1053(Q , LT C11 5 0(S, LTC1151 (D, LT C11 5 2(S, LTC1047 (D, 10|i.V L T C1049< S,10nV ) LT C 1 0 5 0 (S , 5^V) LTC1051 (D, 5 m V)

Contextual Info: PIN CONFIGURATIONS OUT A 1 PIN 1 INDICATOR 8 V+ –IN A 2 ADA4610-2 7 OUT B +IN A 3 TOP VIEW Not to Scale 6 –IN B V– 4 5 +IN B NOTES 1. THE EXPOSED PAD MUST BE CONNECTED TO V–. Figure 1. ADA4610-2, 8-Lead LFCSP (CP Suffix) OUT A 1 –IN A 2 +IN A 3

TL191

Contextual Info: T L18 2 , T L18 5 , T L18 8 , TL19 1 BI MOS SWITCHES D 2 23 4 , JUNE 1 9 7 6 -R E V IS E D SEPTEMBER 1986 Functionally Interchangeable with Siliconix DG182, DG185, DG188, DG191 with Same Terminal Assignments • Monolithic Construction • Adjustable Reference Voltage

jfet transistor

Abstract: Lovoltech LVTS101 LVTS101N LVTS1101S LS1105 PN channel MOSFET 10A
Contextual Info: www.Lovoltech.com PWRLITE-LS1105S Enhanced N-Channel Power JFET Transistor, Trench Technology Trench Power JFET with low threshold voltage Device fully “ON” with Vgs = 0.7V Optimum for “Low Side” Buck and DC-DC Converters Low Rg and low Cds for high speed switching

jfet transistor

Abstract: Lovoltech jfet application LVTS1101S POWER JFET LVTS101 LVTS101N PN channel MOSFET 10A Marking 654 Diode and Transistor 1980
Contextual Info: www.Lovoltech.com PWRLITE-LS1101S Enhanced N-Channel Power JFET Transistor, Trench Technology Trench Power JFET with low threshold voltage Device fully “ON” with Vgs = 0.7V Optimum for “Low Side” Buck and DC-DC Converters Low Rg and low Cds for high speed switching

Contextual Info: TL182, TL185, TL188, TL191 BI-MOS SWITCHES D2234, JUNE 1976-REVISED SEPTEMBER 1986 F unctionally Interchangeable w ith Siliconix D G 182, D G 185, D G 188, DG191 w ith Same Term inal A ssig n m e nts M o n o lith ic C o n stru ctio n A d ju sta b le Reference V oltage

Contextual Info: FEATURES PIN CONFIGURATION Low offset voltage B grade: 0.4 mV maximum ADA4610-1/ADA4610-2 only A grade: 1 mV maximum Low offset voltage drift B grade: 4 µV/°C maximum (ADA4610-1/ADA4610-2 only) A grade: 8 µV/°C maximum Low input bias current: 5 pA typical

Contextual Info: LT1457 Dual, Precision JFET Input Op Amp U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ Handles 10,000pF Capacitive Load 450µV Max Offset Voltage 1200µV Max Offset Voltage in S8 Package 50pA Bias Current at 70°C 13nV/√Hz Voltage Noise 4V/µs Slew Rate

application of TL084

Abstract: LF351 op-amp D/A Linear amp 10m TL084 LT1013DS8 LT1057 LT1113 LT1457 LT1457ACN8 LT1457CN8
Contextual Info: LT1457 Dual, Precision JFET Input Op Amp U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ Handles 10,000pF Capacitive Load 450µV Max Offset Voltage 1200µV Max Offset Voltage in S8 Package 50pA Bias Current at 70°C 13nV/√Hz Voltage Noise 4V/µs Slew Rate

tl084 LT

Abstract: LF351 TL084 FEATURES 327 LAMP hp 5082-4204 pin photodiode tl082 op amp lf444 tl074 analog
Contextual Info: LT1057/LT1058 Dual and Quad, JFET Input Precision High Speed Op Amps FEATURES DESCRIPTION 14V/µs Slew Rate: 10V/µs Min n 5MHz Gain-Bandwidth Product n Fast Settling Time: 1.3µs to 0.02% n 150µV Offset Voltage LT1057 : 450µV Max n 180µV Offset Voltage (LT1058): 600µV Max

lovoltech

Abstract: jfet transistor TO252-DPAK package LD1105N TO252-DPAK LD1105 j-fet transistor marking A1 TRANSISTOR lovoltech no diode
Contextual Info: PWRLITE LD1105N High Performance N-Ch Vertical Power JFET Transistor Description Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “High Side” Buck Converters Optimized for Secondary Rectification in isolated DC-DC