"FIELD EFFECT TRANSISTOR" SOP 8 Search Results

"FIELD EFFECT TRANSISTOR" SOP 8 Result Highlights (5)

Part	Manufacturer	Description	Download
TPH1R306PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N)	Datasheet
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)	Datasheet
TPH9R00CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N)	Datasheet
TPHR8504PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N)	Datasheet
XPH2R106NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF)	Datasheet

"FIELD EFFECT TRANSISTOR" SOP 8 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TPC8401 Contextual Info: TOSHIBA TENTATIVE TPC8401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE U-MOSII TPC8401 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SOP-8 •	OCR Scan	TPC8401 TPC8401	PDF
TPC8204 Contextual Info: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8. Low Drain-Source ON Resistance : RßS (ON) = 16	OCR Scan	TPC8204 TPC8204	PDF
tpc8204 Contextual Info: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8. Low Drain-Source ON Resistance : RßS (ON) = 16	OCR Scan	TPC8204 tpc8204	PDF
Contextual Info: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS SOP-8, 8 5 n n n n Low Drain-Source ON Resistance	OCR Scan	TPC8204	PDF
Contextual Info: T O SH IB A TPC8303 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-M O SII TPC8303 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8	OCR Scan	TPC8303 27mfl	PDF
Contextual Info: T O SH IB A TENTATIVE TPC8401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE U -M O SII TPC8401 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8	OCR Scan	TPC8401	PDF
niko-sem Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM P07P03LV Mode Field Effect Transistor Preliminary SOP-8 D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30 37mΩ -7A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)	Original	P07P03LV DEC-12-2002 niko-sem	PDF
TPC8006 Abstract: TPC8006-H Contextual Info: TO SH IBA TPC8006-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M OSII TPC8006-H NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS SOP-8 LITHIUM ION BATTERY APPLICATIONS	OCR Scan	TPC8006-H 20truments, TPC8006 TPC8006-H	PDF
P2103HVG Abstract: 21m7a transistor j 127 niko-sem Contextual Info: NIKO-SEM P2103HVG Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 21mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P2103HVG Jun-29-2004 P2103HVG 21m7a transistor j 127 niko-sem	PDF
Contextual Info: TO SHIBA TENTATIVE TPC8007-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SII TPC8007-H NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS SOP-8 LITHIUM ION BATTERY APPLICATIONS	OCR Scan	TPC8007-H 10//A	PDF
tpc8403 Contextual Info: TOSHIBA TPC8403 TOSHIBA FIELD EFFECT TRANSISTOR MOTOR DRIVE NOTE BOOK PC PORTABLE DEVICES • • • • SILICON N, P CHANNEL MOS TYPE U-MOSII TPC8403 INDUSTRIAL APPLICATIONS Unit in mm SOP-8 Low Drain-Source ON Resistance : P CHANNEL Rj)g (QN) = mH (Typ.)	OCR Scan	TPC8403 VDD-24V, tpc8403	PDF
P07D03LVG Abstract: Niko Semiconductor nikos niko-sem Contextual Info: P07D03LVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 20mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P07D03LVG Jun-29-2004 P07D03LVG Niko Semiconductor nikos niko-sem	PDF
16-NC Contextual Info: TO SHIBA TENTATIVE TPC8006-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SII TPC8006-H LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8 HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS	OCR Scan	TPC8006-H 10//A 16-NC	PDF
Contextual Info: TOSHIBA TPC8303 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII TPC8303 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SOP-8 8 Low Drain-Source ON Resistance	OCR Scan	TPC8303 --10//A	PDF

P5506HVG Abstract: P5506 EQUIVALENT* P5506 10 35 SOP DIODE BR 8 TRANSISTOR Contextual Info: P5506HVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 60 55mΩ 4.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P5506HVG AUG-19-2004 P5506HVG P5506 EQUIVALENT* P5506 10 35 SOP DIODE BR 8 TRANSISTOR	PDF
P2804HVG Contextual Info: P2804HVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 40 28mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P2804HVG AUG-19-2004 P2804HVG	PDF
"Field Effect Transistor" sop 8 Abstract: P06B03LV NIKO-SEM "Field Effect Transistor" nikos Contextual Info: Logic Level Enhancement P06B03LV NIKO-SEM Dual P-Channel Mode Field Effect Transistor SOP-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 50mΩ -6A G :GATE D :DRAIN S :SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P06B03LV MAY-19-2003 "Field Effect Transistor" sop 8 P06B03LV NIKO-SEM "Field Effect Transistor" nikos	PDF
P07D03LV Abstract: NIKO-SEM Contextual Info: P07D03LV Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 20mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS	Original	P07D03LV OCT-14-2002 P07D03LV NIKO-SEM	PDF
P9936LV Abstract: nikos Contextual Info: P9936LV Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID 25 120mΩ 5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS	Original	P9936LV P9936LV" JAN-07-2002 P9936LV nikos	PDF
P2503HVG Abstract: P2503 niko-sem Contextual Info: NIKO-SEM P2503HVG Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 25mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P2503HVG AUG-13-2004 P2503HVG P2503 niko-sem	PDF
P1303BVG Abstract: SEM 2004 Contextual Info: P1303BVG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 12.5mΩ 10A SOP-8 Lead Free D G : GATE D : DRAIN S : SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P1303BVG AUG-13-2004 P1303BVG SEM 2004	PDF
nikos Abstract: P4420LV Contextual Info: NIKO-SEM P4420LV N-Channel Logic Level Enhancement Mode Field Effect Transistor SOP-8 D PRODUCT SUMMARY V BR DSS RDS(ON) ID 25 22mΩ 9A 1,2,3 : SOURCE 4 : GATE 5,6,7,8 : DRAIN G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P4420LV P4420LV" APR-08-2002 nikos P4420LV	PDF
TPC8305 Contextual Info: TOSHIBA TPC8305 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSÏÏ TPC8305 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC SOP-8 PORTABLE MACHINES AND TOOLS Compact and thin package allows smaller mounting area. Low Drain-Source ON Resistance	OCR Scan	TPC8305 TPC8305	PDF
Contextual Info: TOSHIBA TPC8105-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH SPEED U -M O SII TPC8105-H LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS SOP-8 HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS	OCR Scan	TPC8105-H 111III	PDF

"FIELD EFFECT TRANSISTOR" SOP 8 Search Results

"FIELD EFFECT TRANSISTOR" SOP 8 Result Highlights (5)

"FIELD EFFECT TRANSISTOR" SOP 8 Datasheets Context Search

TPC8401

TPC8204

tpc8204

niko-sem

TPC8006

P2103HVG

tpc8403

P07D03LVG

16-NC

P5506HVG

P2804HVG

"Field Effect Transistor" sop 8

P07D03LV

P9936LV

P2503HVG

P1303BVG

nikos

TPC8305