"DIODE MODULE" 160A Search Results

"diode module" 160a

Abstract: PK160F160 PD160F40 PD160F-160 KK160F40 PD160F80 PE160F40 PE160F80 PK160F40 PK160F80
Contextual Info: THYRISTOR MODULE PK PD,PE,KK 160F UL:E76102 M Power Thyristor/Diode Module PK160F series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. Two elements in a package and electrically

"diode module" 160a

Abstract: PK160F-160 PD160F-160 KK160F40 PD160F40 PD160F80 PE160F40 PK160F40 PK160F80
Contextual Info: THYRISTOR MODULE PK PD,PE,KK 160F UL:E76102 （M） Power Thyristor/Diode Module PK160F series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. Two elements in a package and electrically

Rectifiers

Abstract: MIMMD160S180B
Contextual Info: MIMMD160S180B 1800V 160A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package

Rectifiers

Abstract: MIMMD160S160DK
Contextual Info: MIMMD160S160DK 1600V 160A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package

Rectifiers

Abstract: MIMMD160S120DK
Contextual Info: MIMMD160S120DK 1200V 160A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package

Rectifiers

Abstract: MIMMD160S160B
Contextual Info: MIMMD160S160B 1600V 160A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package

Rectifiers

Abstract: MIMMD160S120B
Contextual Info: MIMMD160S120B 1200V 160A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package

Contextual Info: THYRISTOR MODULE P K pd,pe,kk 160F Power Thyristor/Diode Module P K 16 0 F series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 1,600 V are available. Two elements in a package and

E2 diode

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

SiC POWER MOSFET

Abstract: sic MOSFET APTMC60TLM14CAG
Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

MG160S1UK1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE M G 1 6 S 1 U K 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. « The Collector is Isolated from Case • W i t h Built-in Free Wheeling Diode • High DC Current Gain: h;p£=100 M i n . (IC=160A)

A31L

Contextual Info: D 1 I O 2 O Z - 1 C 2 N 2 A : Outline Drawings POWER TRANSISTOR MODULE • 4t;Bb : Features • SffiME • 7 High Voltage y -¡m g K rt* • ASO A'TSv.' •mm Including Free W heeling Diode Excellent Safe Operating Area Insulated Type : Applications •

DF160R12W2H3F

Abstract: DF160R12W2H3
Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DF160R12W2H3F_B11 VorläufigeDaten/PreliminaryData J VCES = 1200V IC nom = 160A / ICRM = 320A TypischeAnwendungen • SolarAnwendungen TypicalApplications • SolarApplications

DF80R12W2H3

Abstract: DF80R12W2H3F
Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DF80R12W2H3F_B11 VorläufigeDaten/PreliminaryData J VCES = 1200V IC nom = 80A / ICRM = 160A TypischeAnwendungen • SolarAnwendungen TypicalApplications • SolarApplications ElektrischeEigenschaften

DF160R12W2H3

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DF160R12W2H3_B11 VorläufigeDaten/PreliminaryData J VCES = 1200V IC nom = 160A / ICRM = 320A TypischeAnwendungen • SolarAnwendungen • USV-Systeme TypicalApplications • SolarApplications

DF80R12W2H3

Contextual Info: TechnischeInformation/technicalinformation DF80R12W2H3_B11 VorläufigeDaten/Preliminarydata J V†Š» = 1200V I† ÒÓÑ = 80A / I†ç¢ = 160A TypischeAnwendungen • Solar Anwendungen • USV-Systeme TypicalApplications • Solar Applications

DF80R12W2H3

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DF80R12W2H3_B11 VorläufigeDaten/PreliminaryData J VCES = 1200V IC nom = 80A / ICRM = 160A TypischeAnwendungen • SolarAnwendungen • USV-Systeme TypicalApplications • SolarApplications

Contextual Info: 10-FY12NMA160SH-M420F 10-PY12NMA160SH-M420FY preliminary datasheet flowMNPC 1 1200V/160A Features flow1 12mm housing ● mixed voltage NPC topology ● reactive power capability ● low inductance layout ● Split output ● Common collector neutral connection

Contextual Info: MSTC160 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 160Amp Applications „ „ „ „ Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7 „ „ „ 5 4 „ „ International standard package

Contextual Info: MSFC160 Thyristor/Diode Modules VRRM / VDRM IFAV / ITAV 800 to 1600V 160Amp Applications „ „ „ „ Circuit Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Features „ „ „ „ „ „ International standard package

Contextual Info: MSFC160 Thyristor/Diode Modules 800 to 1600V 160Amp VRRM / VDRM IFAV / ITAV Applications y y y y Circuit Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Features y y y y y y International standard package High Surge Capability

500w power amplifier circuit diagram

Abstract: 800 WATT MOSFET AMPLI DIAGRAM PULSE CURRENT SOURCE m 3329
Contextual Info: HIGH CURRENT PULSE DRIVER PD01 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 PRELIMINARY FEATURES • • • • WIDE SUPPLY RANGE—15-200V UP TO 160A PULSE SOURCE THERMAL SHUTDOWN SOA SENTRYTM APPLICATIONS • high power laser diode driver