"DIODE MODULE" 160A Search Results

DAC2F160N4SE

Abstract: 1E-04 Cathode Anode Breakdown Voltage
Contextual Info: Preliminary DAC2F160N4SE Jan. 2010 Ultra-Fast Soft Recovery Diode Module Description Equivalent Circuit and Package Ultra-FRD module devices are optimized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters,

MTC130A

Abstract: wenzhou thyristor gate control circuit
Contextual Info: Thyristor/Thyristor Module Thyristor/Diode Module MTC130A /160A MFC130A /160A FEATURES • High voltage • Industrial standard package • Low thermal resistance • Designed and qualified for industrial level • Excellent thermal performances obtained by the usage of

rectifier module

Contextual Info: Power Module Package S Rectifier Diode Module Rectifier Module Circuit Series- Package S RoHS Features • L  ow reverse recovery loss • Low inductance package • Low forward voltage • H  igh surge current capability Applications • F  ield supply for DC

"diode module" 160a

Abstract: PK160F160 PD160F40 PD160F-160 KK160F40 PD160F80 PE160F40 PE160F80 PK160F40 PK160F80
Contextual Info: THYRISTOR MODULE PK PD,PE,KK 160F UL:E76102 M Power Thyristor/Diode Module PK160F series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. Two elements in a package and electrically

"diode module" 160a

Abstract: PK160F-160 PD160F-160 KK160F40 PD160F40 PD160F80 PE160F40 PK160F40 PK160F80
Contextual Info: THYRISTOR MODULE PK PD,PE,KK 160F UL:E76102 （M） Power Thyristor/Diode Module PK160F series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. Two elements in a package and electrically

Rectifiers

Abstract: MIMMD160S180B
Contextual Info: MIMMD160S180B 1800V 160A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package

Rectifiers

Abstract: MIMMD160S160DK
Contextual Info: MIMMD160S160DK 1600V 160A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package

Rectifiers

Abstract: MIMMD160S120DK
Contextual Info: MIMMD160S120DK 1200V 160A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package

Rectifiers

Abstract: MIMMD160S160B
Contextual Info: MIMMD160S160B 1600V 160A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package

Rectifiers

Abstract: MIMMD160S120B
Contextual Info: MIMMD160S120B 1200V 160A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package

Contextual Info: THYRISTOR MODULE P K pd,pe,kk 160F Power Thyristor/Diode Module P K 16 0 F series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 1,600 V are available. Two elements in a package and

FST16040L

Contextual Info: DACO SEMICONDUCTOR CO.,LTD. FST16040L LOW VF SCHOTTKY DIODE MODULE TYPE 160A Features High Surge Capability 160 Amp Rectifier 40 Volts Isolated to Plate POWER MOD Maximum Ratings Operating Temperature: -40 C to +100 Storage Temperature: -40 C to +150 Part Number

FST16030L

Contextual Info: DACO SEMICONDUCTOR CO.,LTD. FST16030L LOW VF SCHOTTKY DIODE MODULE TYPE 160A Features High Surge Capability 160 Amp Rectifier 30 Volts Isolated to Plate POWER MOD Maximum Ratings Operating Temperature: -40 C to +100 Storage Temperature: -40 C to +150 Part Number

Contextual Info: SCHOTTKY BARRIER DIODE MODULE PQ160QH06N 160A/60V 81.5 3.21 NEW DEVELOPMENT PROVISIONAL DATA — 70(2.75)— •53(2.08) 7.71.30) 4 7.3Î.29) >27(1.06) FEATURES S. g' ° Pour— Arms, Cathode Common to Base Plate 171.67) ■33- ° Low Forward Voltage Drop

E2 diode

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

SiC POWER MOSFET

Abstract: sic MOSFET APTMC60TLM14CAG
Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

"diode module" 160a

Abstract: PQ160QH06N xfsm
Contextual Info: SCHOTTKY BARRIER DIODE MODULE PQ160QH06N 160A/60V NEW D E VE LO P M E N T PROVISIO NAL D A TA FEATURES ° Pour— Arms, Cathode Common to Base Plate ° Low Forward Voltage Drop ° Low Power 'Loss, High Efficiency • High Surge Capability Approx. Net Height : 250 Grams

MG160S1UK1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE M G 1 6 S 1 U K 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. « The Collector is Isolated from Case • W i t h Built-in Free Wheeling Diode • High DC Current Gain: h;p£=100 M i n . (IC=160A)

A31L

Contextual Info: D 1 I O 2 O Z - 1 C 2 N 2 A : Outline Drawings POWER TRANSISTOR MODULE • 4t;Bb : Features • SffiME • 7 High Voltage y -¡m g K rt* • ASO A'TSv.' •mm Including Free W heeling Diode Excellent Safe Operating Area Insulated Type : Applications •

MG160S1UK1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG160S1UK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Collector • With Built-in • High DC is Isolated from Case Free Whee l i n g Diode C u r r e n t G a in: hpg=100 Min. (IC =1 6 0 A )

DF160R12W2H3F

Abstract: DF160R12W2H3
Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DF160R12W2H3F_B11 VorläufigeDaten/PreliminaryData J VCES = 1200V IC nom = 160A / ICRM = 320A TypischeAnwendungen • SolarAnwendungen TypicalApplications • SolarApplications

DF80R12W2H3

Abstract: DF80R12W2H3F
Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DF80R12W2H3F_B11 VorläufigeDaten/PreliminaryData J VCES = 1200V IC nom = 80A / ICRM = 160A TypischeAnwendungen • SolarAnwendungen TypicalApplications • SolarApplications ElektrischeEigenschaften