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A94
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Jiangsu Changjiang Electronics Technology
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TRANSISTOR PNP |
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458.43KB |
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A94-10
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Carlo Gavazzi
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Conductive Level Sensors |
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58.12KB |
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A94-20
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Carlo Gavazzi
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2-wire DC (3 mm) |
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52.91KB |
1 |
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A94-TO-92
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Jiangsu Changjiang Electronics Technology
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TRANSISTOR PNP |
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458.44KB |
3 |
A94-TA
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JCET Group
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A94 PNP transistor in TO-92 package with 400V collector-base and collector-emitter breakdown voltage, 625mW power dissipation, DC current gain up to 300, and transition frequency of 50MHz. |
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A94(RANGE:100-200)
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JCET Group
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A94 PNP transistor in SOT-89-3L package with 400V collector-base and collector-emitter breakdown voltage, 200mA continuous collector current, 500mW power dissipation, and DC current gain up to 300. |
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MMBTA94
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Shikues Semiconductor
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High Breakdown Voltage, SOT-23, PNP, Marking:4D, 1. BASE, 2. EMITTER, 3. COLLECTOR |
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CJA9451
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JCET Group
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P-Channel 20-V(D-S) MOSFET CJA9451 in SOT-89-3L package featuring -2.3A continuous drain current, 0.5W power dissipation, and low on-resistance of 0.135 ohms at VGS=-4.5V, designed for fast switching applications. |
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PZTA94
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JCET Group
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PNP transistor in SOT-223 package with -400 V collector-base and collector-emitter breakdown voltage, -0.2 A continuous collector current, 1 W power dissipation, and DC current gain (hFE) up to 300. |
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MMBTA94
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JCET Group
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MMBTA94 is a PNP transistor in SOT-23 package with -400V collector-base and collector-emitter breakdown voltage, -200mA continuous collector current, 350mW power dissipation, and DC current gain hFE up to 300. |
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MMBTA94
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AK Semiconductor
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MMBTA94 is a PNP transistor in SOT-23 package with -400V collector-base and collector-emitter breakdown voltage, -200mA continuous collector current, 350mW power dissipation, and DC current gain ranging from 80 to 300. |
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MMBTA94
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-23 package with -400 V collector-base and collector-emitter voltage, -200 mA continuous collector current, 350 mW power dissipation, and DC current gain ranging from 180 to 300. |
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2SA940(RANGE:40-140)
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JCET Group
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PNP transistor in TO-220-3L package with -150 V collector-base and collector-emitter voltage, -1.5 A continuous collector current, 1.5 W power dissipation, and DC current gain ranging from 40 to 140. |
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PZTA94
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-223 package with -400 V collector-base and collector-emitter voltage, -200 mA continuous collector current, 1 W power dissipation, and DC current gain up to 300. |
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CJA9452
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JCET Group
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N-Channel 20-V(D-S) MOSFET with 50mΩ@4.5V on-resistance, 4A continuous drain current, and SOT-89-3L package, designed for fast switching and low on-resistance applications. |
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A94-TA
