"7 PIN" ON 12V Search Results

cd 7269

Contextual Info: QUS 20-120 www.murata-ps.com 48Vin, 12Vout @ 20A Bus Converters Connector Pin J1 1 2 3 4 5 6 Pin Name ON/OFF NC VIN+ VINVIN+ VIN- Function Connector Pin Referenced to VinVin 36 to 55Vdc Primary return Vin 36 to 55Vdc Primary return J2 1 2 3 4 5 6 7 8 Pin Name

mosfet low vgs

Abstract: I1020
Contextual Info: v G en eral S e m ic o n d u c t o r # _ GF6968E Battery Switch, ESD Protected Common-Drain Dual N-Channel MOSFET Low VGS th Vds 20V RdS(ON) 22mQ Id6.5A DO Pin 1 = 0 Pin 2 = Si Pin 3 = Si Pin 4 = Gì Pin 5 = G 2 Pin 6 = S2 Pin 7 = S2 Pin 8 = D

A1267

Abstract: 80 pin simm flash Flash SIMM 80 28F008SA E28F008S5-090
Contextual Info: SL29041-90 T/G 7(R/S/V)I 1M X 32 Bits 80-Pin Flash SIMM (5V or 12V Program) FEATURES GENERAL DESCRIPTION • • • • • • The SiliconTech SL29041-90(T/G)7(R/S/V)I is a 1M x 32 bits flash memory module. This module consists of four 1M x 8 bits CMOS flash memory in 40-pin TSOP packages mounted on an

mosfet k 1225

Abstract: APM9930 APM9930C
Contextual Info: APM9930/C Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V RDS(ON)=25mΩ(typ.) @ VGS=2.5V • S1 1 8 D1 S1 1 8 D G1 2 7 D1 G1 2 7 D S2 3 6 D2 S2 3

ha741

Abstract: HA747C 0405B JIA747C
Contextual Info: Product specification Philips Semiconductors Linear Products Dual operational amplifier HA747C PIN CONFIGURATION DESCRIPTION The 7 4 7 is a pair of high-performance monolithic operational amplifiers constructed on a single silicon chip. High common-mode voltage range and absence of latch-up" make the 747 ideal for use

TK121

Abstract: TK12115CS TK12115CSC TK12118CS TK12118CSC TK12125CS TK12128CS TK12128CSC TK12133CS TK12133CSC
Contextual Info: APPLICATION MANUAL LDO REGULATOR WITH ON/OFF SWITCH TK121xxCS CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS 9 . TEST CIRCUIT

Contextual Info: Click on Series name for product info on aimtec.com Series AM1D-RZ 1 Watt | DC-DC Converter FEATURES: •        RoHS compliant High efficiency up to 89% Low profile plastic package 7 pin SIP package Operating temperature -40oC to + 85oC

Contextual Info: Click on Series name for product info on aimtec.com Series AMLD-IZ Up to 2000mA | LED Driver FEATURES: • • • • High Power LED Driver Wide 7:1 Input Voltage Range Remote Control Function 24 Pin DIP Package Models Single output Model Input Voltage (Vdc)

apm9932c

Abstract: Anpec Electronics APM9932 P-Channel MOSFET code L 1A pch 1275
Contextual Info: APM9932/C Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V • P-Channel S1 1 8 D1 S1 1 8 D G1 2 7 D1 G1 2 7 D S2 3 6 D2 S2 3 6 D G2 4 5 D2 G2 4 5

PSS15-7-P

Abstract: PIN photodiode 500 nm
Contextual Info: DATA SHEET PSS15-7-P LARGE AREA SILICON PHOTODIODE PSS15-7-P PSS15-7-P is a PIN Silicon PHOTODIODE with an Active Area 15 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged on PCB board without a window. Pacific Silicon Sensor Inc. can also fabricate Silicon Detectors to your

TSM9926D

Abstract: TSM9926DCS
Contextual Info: TSM9926D 20V Dual N-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 2. Gate 3. Source 4. Gate 5, 6, 7, 8. Drain VDS = 20V RDS on , Vgs @ 4.5V, Ids @ 6A =30mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.2A =40mΩ Features Block Diagram  Advanced trench process technology

APM4500

Abstract: P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT n-and P-channel power mosfet SO-8 J-STD-020A
Contextual Info: APM4500 Dual Enhancement Mode MOSFET N-and P-Channel Features • N-Channel 20V/8A , • Pin Description RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V P-Channel S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V

N02 Transistor rf

Abstract: MAX312 MAX312CPE MAX312CSE MAX312CUE MAX312EPE MAX313 MAX314 MAX314 19-0420
Contextual Info: 19-0420; Rev 2; 7/02 10Ω, Quad, SPST, CMOS Analog Switches _Applications _Features ♦ Pin Compatible with DG411/DG412/DG413 ♦ Low On-Resistance 6.5Ω typical ♦ Guaranteed RON Match Between Channels (1.5Ω max)

SLG55221

Abstract: fet n-channel pin configuration FET marking code
Contextual Info: 2 Rail GreenFETTM High Voltage Gate Driver Features Pin Configuration 5V Power supply • Drain Voltage Range 1.0V to 20V • • VCC • Controlled Turn on Slew Rate • TDFN-8 Package 2 4 3 8 7 6 5 PG G1/G2 S/DIS1 D 8-pin TDFN Top View Environmental Application Functions

TI1225

Abstract: pci 6133 443bx ATI Rage 3D ATI 3D RAGE FIR 3d "ATI 3D Rage" 370-PIN rs232 ps2 mouse 440ZX
Contextual Info: 1 2 3 4 CPU 6 L1 CACHE : 32K CELERON PPGA 370-PIN SOCKET A 5 7 8 6133 BLOCK DIAGRAM L2 CACHE : 128K A VCC_CORE : 1.3-2.05V TYPICAL 2V VTT : 1.5V HCLKPII VCC_CMOS : 2.5V 440ZX DCLKRD/WR ON-BOARD SDRAM :32MB ON BOARD 32MB RESERVED INTEL 443BX SDRAMCLK0/1 VCC3

TSM902D

Abstract: DFN PACKAGE thermal resistance Dual N-Channel MOSFET esd protect mosfet
Contextual Info: Preliminary TSM902D 20V Dual N-Channel MOSFET w/ESD Protected DFN 2x5 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 1 2. Source 1 3. Gate 1 4. Gate 2 5, Source 2 6. Source 2 7. Drain (Exposed Pad) 20 Features ID (A) 22 @ VGS = 4.5V 7 28 @ VGS = 2.5V

Contextual Info: TSM6866D 20V Dual N-Channel Enhancement Mode MOSFET Pin assignment: 1. Drain 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain VDS = 20V RDS on , Vgs @ 4.5V, Ids @ 6A =30mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.2A =40mΩ Features Block Diagram

2n3972

Abstract: 2N3970 2N3971 2N3970-2N3972
Contextual Info: MMÜÜ^fDIL 2 N 3 9 7 0 -2 N 3 9 7 2 N -C h an n el JFET FEATURES • rDS on < 30 ohms (2N3970) PIN CONFIGURATION CHIP TOPOGRAPHY TO-18 5001B • iD(off) < 250 pA • Fast Switching 001 » fULU RADIUS _ . 00M_ , OOITS.IOAA'NI ~ \ ~ " H 0012 [NOTt SUUSTflAff iSGATt

th 9428

Abstract: 9428 A102 APM9428 and/gi 9428
Contextual Info: APM9428 N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A, RDS ON = 25mΩ(typ.) @ VGS = 4.5V RDS(ON) = 50mΩ(typ.) @ VGS = 2.5V • • • Super High Density Cell Design Reliable and Rugged SO-8 Package S 1 8 D S 2 7 D S 3 6 D G 4 5

auf1405zs

Contextual Info: AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Automotive Qualified * l l l l l l l D AUIRF1405ZS-7P D2Pak- 7 Pin

potentiometer 10k

Contextual Info: REV. DESCRIPTION/E CO NO. RELEASE IN CAD [2] DATE 2/7/03 -3.0±0.5 02.8 21 +1.0 6.0 MAX. PIN NUMBER NO. CN1 CN2 VR1 POTENTIOMETER 10K VR1 SW1 INHIBIT (+V OR OPEN = OFF/GND = ON) 4 INPUT (GND) 5 INPUT (+12V) 1 OUTPUT (HV) . 2 . 3 — 4 5 OUTPUT (GND)

BUS-29854

Abstract: STANAG 3838 BU-63127 A3818 BUS-25679 BU-61590X5
Contextual Info: MIL-STD-1553 DATA BUS PRODUCTS • TRANSCEIVERS — Sinale MODEL TYPE PACKAGE BUS-6310211 Universal T ransceiver 1 .2 6 x 1 .2 6 x 0 .1 7 " BUS-63105ll -15V BUS-63107ll(-12V) Transceiver 24 Pin DDIP 1.4 x 0.8 x 0.20" Monolithic Transceiver.Listed on MIL.DWG.No.5962-86049-02ZC. Conforms to

Contextual Info: RL-723 COMMON BASE PREAMPLIFIER 1. General Features of the R L-723 Preamplifier • Small Size 7 pin socket on 0 . 1” center to center allows preamplifier to placed close to the detector. • Extremely Fast Rise Time. m • Well Defined Decay Time. • Good Linearity.

27BSC

Abstract: TSM9433 IDA45
Contextual Info: TSM9433 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain -20 Features ID (A) 45 @ VGS = -4.5V -5.4 70 @ VGS = -2.5V -4.2 Block Diagram ● Advance Trench Process Technology