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Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
BD9V101MUF-LB BD9V101MUF-LB ECAD Model ROHM Semiconductor 16V to 60V, 1A 1ch 2.1MHz Synchronous Buck Converter Integrated FET (Industrial Grade)
BD9G102G-LB BD9G102G-LB ECAD Model ROHM Semiconductor 6V to 42V, 0.5A 1ch Simple Buck Converter Integrated FET (Industrial Grade)
BD9G341AEFJ BD9G341AEFJ ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET
BD9A600MUV BD9A600MUV ECAD Model ROHM Semiconductor 2.7V to 5.5V Input, 6A Integrated MOSFET, Single Synchronous Buck DC/DC Converter
BD9G341AEFJ-LB BD9G341AEFJ-LB ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET (Industrial Grade)
BD9C601EFJ BD9C601EFJ ECAD Model ROHM Semiconductor 4.5V to 18V Input, 6.0A Integrated MOSFET 1ch Synchronous Buck DC/DC Converter

985 transistor Datasheets Context Search

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2005 - J133 mosfet transistor

Abstract: transistor j239 MRF9002NR2 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133
Text: .4 985 3.9 + j15.9 22.6 + j9.3 Z source Z load Transistor 3 Figure 11. Series , lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array N , Performance at 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - , Gate-Source Voltage VGS - 0.5, + 15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 , Characteristic Thermal Resistance, Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level


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PDF MRF9002R2 MRF9002NR2 PFP-16 J133 mosfet transistor transistor j239 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133
2006 - MRF9002NR2

Abstract: A113 RO4350 mosfet j133 j239 J122 MARKING
Text: Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET MRF9002NR2 Designed , 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · , Voltage VGS - 0.5, + 15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 W , Characteristic Thermal Resistance, Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level , Characteristic On Characteristics Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system


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PDF MRF9002NR2 MRF9002NR2 A113 RO4350 mosfet j133 j239 J122 MARKING
2005 - MRF9002NR2

Abstract: No abstract text available
Text: TRANSISTOR 3 Zo = 50 Ω Zo = 50 Ω T3 T2 T1 T2 985 MHz f = 925 MHz 985 MHz f = , .3 23.2 + j10.4 985 4.1 + j15.8 23.0 + j11.1 Zload Ω Transistor 1 VDD = 26 V, IDQ = 25 , lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array N , Performance at 960 MHz, 26 Volts Output Power — 2 Watts Per Transistor Power Gain — 18 dB Efficiency  , Transistor @ TC = 25°C PD 4 W Storage Temperature Range Tstg - 65 to +150 °C


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PDF MRF9002R2 MRF9002NR2 PFP-16
2005 - ON SEMICONDUCTOR J122

Abstract: MRF9002NR2
Text: .3 4.1 + j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 6.0 + j12.3 5.9 + j14.3 5.8 + j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource , POWER MOSFET RF Power Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET , Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for , Drain-Source Voltage Gate-Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage Temperature Range


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PDF MRF9002NR2 PFP-16 MRF9002R2 MRF9002R2 ON SEMICONDUCTOR J122
2002 - motorola MOSFET 935

Abstract: J133 mosfet transistor transistor 955 MOTOROLA sps transistor
Text: ­ j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zin 6.0 ­ j12.3 5.9 ­ j14.3 5.8 ­ j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zin 4.3 , MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL , station equipment. · Guaranteed Performance at 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor , . MAXIMUM RATINGS Rating Drain­Source Voltage Gate­Source Voltage Total Dissipation Per Transistor @ TC =


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola MOSFET 935 J133 mosfet transistor transistor 955 MOTOROLA sps transistor
2005 - power transistor unit j122

Abstract: MRF9002NR2
Text: .3 4.1 + j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 6.0 + j12.3 5.9 + j14.3 5.8 + j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource , Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 1000 MHz, 2 W , Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain and Insertion Phase Flatness · , Rating Drain-Source Voltage Gate-Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage


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PDF MRF9002NR2 MRF9002NR2 power transistor unit j122
2004 - J133 mosfet transistor

Abstract: transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935
Text: Semiconductor, Inc. TRANSISTORS 1 and 2 TRANSISTOR 3 Zo = 50 Zo = 50 T3 T2 T1 T2 985 , TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array , Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain and Insertion , Transistor @ TC = 25°C PD 4 Watts Storage Temperature Range Tstg - 65 to +150 °C , CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case, Single Transistor NOTE - CAUTION - MOS


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PDF MRF9002R2/D MRF9002R2 J133 mosfet transistor transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935
2006 - MRF9002NR2

Abstract: marking us capacitor pf l1 marking Z4 A113 RO4350 transistor A113
Text: Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Capable of Handling 10 , VGS - 0.5, + 15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 W Storage , Resistance, Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level Test Methodology Per , Freescale Semiconductor LAST ORDER 4 APR 09 LAST SHIP 3 OCT 09 RF Power Field Effect Transistor Array , 37 - dBm Characteristic Functional Tests (Per Transistor in Freescale Test Fixture, 50


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PDF MRF9002NR2 MRF9002NR2 marking us capacitor pf l1 marking Z4 A113 RO4350 transistor A113
2007 - transistor A113

Abstract: a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
Text: - 185 TRANSISTORS 1 and 2 TRANSISTOR 3 Zo = 50 T3 985 MHz Zsource f = 925 MHz Zo = 50 , 925 960 985 Zsource 4.5 + j13.3 4.3 + j15.3 4.1 + j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 6.0 + j12.3 5.9 + j14.3 5.8 + j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.3 + j12.2 4.3 + j14.0 3.9 + j15.9 Transistor 3 , RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for


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PDF MRF9002NT1 MRF9002R2 MRF9002R2 transistor A113 a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
2006 - MRF9002NR2

Abstract: RO4350 J104 J158
Text: TRANSISTOR 3 Zo = 50 Zo = 50 f = 925 MHz 985 MHz f = 925 MHz 985 MHz Zsource Zload , .3 23.4 + j9.2 960 4.3 + j15.3 23.2 + j10.4 985 4.1 + j15.8 23.0 + j11.1 Transistor 1 , Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial , Transistor Power Gain - 18 dB Efficiency - 50% · Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 , -0.5, +65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Dissipation Per Transistor


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PDF MRF9002NR2 PFP-16 MRF9002NR2 RO4350 J104 J158
2005 - J133 mosfet transistor

Abstract: ON SEMICONDUCTOR J122 MRF9002R2 transistor a113 a113 transistor marking transistor RF
Text: Device Data Freescale Semiconductor TRANSISTORS 1 and 2 TRANSISTOR 3 Zo = 50 T3 985 MHz , , IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.5 + j13.3 4.3 + j15.3 4.1 + j15.8 Transistor , j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.3 + j12.2 4.3 , POWER MOSFET RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET , Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for


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PDF MRF9002NT1 MRF9002R2 MRF9002R2 J133 mosfet transistor ON SEMICONDUCTOR J122 transistor a113 a113 transistor marking transistor RF
2004 - motorola rf Power Transistor

Abstract: No abstract text available
Text: DATA TRANSISTORS 1 and 2 TRANSISTOR 3 Zo = 50 T3 985 MHz Zsource f = 925 MHz Zo = 50 , 925 960 985 Zsource 4.5 + j13.3 4.3 + j15.3 4.1 + j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 6.0 + j12.3 5.9 + j14.3 5.8 + j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.3 + j12.2 4.3 + j14.0 3.9 + j15.9 Transistor 3 , Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N -


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola rf Power Transistor
2002 - J239

Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
Text: ZOL* T3 ZOL* 985 MHz TRANSISTORS 1 and 2 TRANSISTOR 3 VDD = 26 V, IDQ = 25 mA, Pout , .4 985 Z 22.6 ­ j9.3 Transistor 3 Figure 10. Series Equivalent Input and Output Impedance , Sub­Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N­Channel Enhancement­Mode , Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain and Insertion Phase Flatness , Vdc Gate­Source Voltage VGS ­0.5, +15 Vdc Total Dissipation Per Transistor @ TC = 25


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PDF MRF9002R2/D MRF9002R2 J239 motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
2006 - MRF9002NR2

Abstract: No abstract text available
Text: Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial , Transistor Power Gain — 18 dB Efficiency — 50% • Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 , Per Transistor @ TC = 25°C PD 4 W Storage Temperature Range Tstg -ā65 to +150 , , Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 , Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system) VGS1 + C7 Z1 Z4 Z5


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PDF MRF9002NR2 PFP-16 MRF9002NR2
2001 - J133 mosfet transistor

Abstract: transistor 955 MOTOROLA
Text: .3 4.3 ­ j15.3 4.1 ­ j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zin , 985 Zin 4.3 ­ j12.2 4.3 ­ j14.0 3.9 ­ j15.9 Transistor 3 ZOL* 23.1 ­ j6.5 22.8 ­ j8.4 22.6 ­ j9.3 Z , MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL , equipment. · Guaranteed Performance at 960 MHz, 26 Volts Output Power ­ 2 Watts Per Transistor Power Gain ­ , . MAXIMUM RATINGS Rating Drain­Source Voltage Gate­Source Voltage Total Dissipation Per Transistor @ TC =


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D J133 mosfet transistor transistor 955 MOTOROLA
2001 - DO103

Abstract: 985 transistor DO148 DO63 DO134 DO93 DO107 DO147 DO117 DO143
Text: data is high, the driver output transistor goes on. When it is low, the driver output transistor goes , -78.8 -78.8 -78.8 -78.8 -78.8 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 Pad No. 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 , -562.5 -505.5 -448.5 Y 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5


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PDF 192-bit S-4662AWI S-4662AWI DO191 DO192 1000H DO103 985 transistor DO148 DO63 DO134 DO93 DO107 DO147 DO117 DO143
1998 - BYT 56M diode

Abstract: IC4 7805 98c86 eeprom programmer schematic easy design universal eeprom programmer schematic AN-985 coil 2n2222a 98C86A 7805 12v to 5v HiSeC
Text: AN- 985 Fairchild Application Note 985 Designing and Programming a Complete HiSeCTM-based , visual cue the device is transmitting. The TX output pin controls the base of an NPN transistor , which , bit coding formats will be inverted. TxPol = 0 should be used to drive the base of an NPN transistor , www.fairchildsemi.com AN- 985 DATA FIELD USAGE IN TRANSMISSION FRAMES 3 LM317 VIN VOUT AN- 985 , (with any number of future valid 4 www.fairchildsemi.com AN- 985 codes) for the keys in case


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PDF AN-985 NM95HS01/02 MM57HS BYT 56M diode IC4 7805 98c86 eeprom programmer schematic easy design universal eeprom programmer schematic AN-985 coil 2n2222a 98C86A 7805 12v to 5v HiSeC
2008 - Not Available

Abstract: No abstract text available
Text: STD13005 Semiconductor NPN Silicon Power Transistor Features • High speed switching • VCEO(sus)=400V • Suitable for Switching Regulator and Motor Control Ordering Information Type NO. Marking STD13005 STD13005 Package Code TO-220AB Outline Dimensions unit : mm 9.80~10.20 , . 9.85 ~10.15 0.95~1.05 1.49~1.59 1.62 Max. 2.35~2.45 12.68~13.48 9.05~9.35 3.00° 6.30~6.70 1.20~1.40 9.85 ~10.15 KSD-T0P016-000 0.40~0.60 PIN Connections 1. Base 2


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PDF STD13005 O-220AB KSD-T0P016-000
2008 - STD13007

Abstract: No abstract text available
Text: Semiconductor STD13007 NPN Silicon Power Transistor Features · High speed switching · High Collector Voltage : VCBO = 700V · Suitable for Switching Regulator and Motor Control Ordering Information Type NO. STD13007 Marking STD13007 Package Code TO-220AB Outline Dimensions 9.80~10.20 3.50~3.70 , . 0.95~1.05 1.49~1.59 1.37 Max. 0.95 Max. 2.20~2.60 3.00° 5.08 Typ. 2.35~2.45 9.85 ~10.15 9.85 ~10.15 2.54 Typ. 0.40~0.60 PIN Connections 1. Base 2. Collector 3. Emitter KSD-T0P013


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PDF STD13007 STD13007 O-220AB KSD-T0P013-001
MX1011B430W

Abstract: SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor MX1011B430W , epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange , transistor MX1011B430W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , Manufacturer Philips Semiconductors Product specification NPN microwave power transistor PACKAGE OUTLINE , 8.25 -16.5- 9.85 10.3 max 10.0 2.7 min Dimensions in mm. Torque on screws: max. 0.4


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PDF MX1011B430W OT439A. MX1011B430W SC15
2006 - 2731-100M

Abstract: 100 watts transistor s-band transistor frequency 30GHz gain 20 dB
Text: transistor capable of providing 100 Watts of pulsed RF output power at 200µs pulse width, 10% duty factor across the 2700 to 3100 MHz band. The transistor prematch and test fixture has been optimized through the use of 10 Ohm TRL Analysis. This ceramic sealed transistor is specifically designed for S-band , 8.24-j10.26 2.9 8.54-j8.06 3.0 9.85 -j6.05 3.1 10.26-j4.88 Zl 4.33-j4.67 3.95-j4.94 3.47


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PDF 2731-100MR3 2731-100M 55KS-1 2731-100M 000pF 100pF 2200uF 25Mil, 100 watts transistor s-band transistor frequency 30GHz gain 20 dB
Not Available

Abstract: No abstract text available
Text: ACE634 20V Complementary Enhancement Mode Field Effect Transistor Description The ACE634 , Enhancement Mode Field Effect Transistor Ordering information ACE634 XX + H Halogen - free Pb - free , Capacitance Coss Reverse Transfer capacitance Crss VGS=0V, VDS=8V, f=1MHZ 522.3 98.5 pF , 20V Complementary Enhancement Mode Field Effect Transistor Typical Characteristics (N-Channel) VER 1.3 3 ACE634 20V Complementary Enhancement Mode Field Effect Transistor Typical


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PDF ACE634 ACE634
Not Available

Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N167A NPN GERMANIUM TRANSISTOR absolute .maximum ratings: (25°C) Voltage! Collector to Base Collector to Emitter Emitter to Base Vn Vm Vm Current 30 volU 30 volts 6 volts Ic In Dtutpalien Collector (25'C)* Total Transistor (25"C)* 75 ma —75 ma PC , ^a /*a 2.5 7.3 v D-C CHARACTERISTICS 6 Ulii . 985 .2 55 .995* .7' 82* 90


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PDF 2N167A
CA3KN31BD

Abstract: LA1DN11 telemecanique lc1d09 LC1K09 telemecanique D range contactors relays telemecanique LP1D0910BD Telemecanique LR2D1321 telemecanique contactors Telemecanique LC1k
Text: type 6 dig, 2 dig/ana 4 transistor 6 dig, 2 dig/ana 4 relay 6 digital 4 relay 6 digital 4 relay , 100/240VAC 12/24VDC 24VAC 100/240VAC 4 transistor output 6 dig, 2 dig/ana 24VDC relay 4 relay , channel relay output 8 channel relay output 16 channel relay output 8 channel transistor sink output 8 channel transistor source output IDEC part no. Order code FC4A-C10R2B FC4A-C16R2B FC4A-C24R2B , channel relay output 16 channel relay output 8 channel transistor sink output 8 channel transistor


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PDF UL94V-0 CIM/8W-D10 CIM/R4-WB-S-24 CIM/R8-WB-S-24 CIM/R16-WB-S-24 16-way CA3KN31BD LA1DN11 telemecanique lc1d09 LC1K09 telemecanique D range contactors relays telemecanique LP1D0910BD Telemecanique LR2D1321 telemecanique contactors Telemecanique LC1k
RX1214B

Abstract: erie 1250-003
Text: power transistor PACKAGE OUTLINE R X 1214B 170W seating plane 3.7 max 2.7 min 3.3 9.85 max , transistor FEATURES · Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty , . DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a FO-91B metal ceramic flange package , Semiconductors Product specification NPN silicon planar epitaxial K * microwave power transistor LIMITING , specification NPN silicon planar epitaxial microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-m


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PDF RX1214B170W 100A101kp50x 1214B MBC981 FO-91B. 71106Eb RX1214B erie 1250-003
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