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Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
BD9V101MUF-LB BD9V101MUF-LB ECAD Model ROHM Semiconductor 16V to 60V, 1A 1ch 2.1MHz Synchronous Buck Converter Integrated FET (Industrial Grade)
BD9G102G-LB BD9G102G-LB ECAD Model ROHM Semiconductor 6V to 42V, 0.5A 1ch Simple Buck Converter Integrated FET (Industrial Grade)
BD9G341AEFJ BD9G341AEFJ ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET
BD9A600MUV BD9A600MUV ECAD Model ROHM Semiconductor 2.7V to 5.5V Input, 6A Integrated MOSFET, Single Synchronous Buck DC/DC Converter
BD9G341AEFJ-LB BD9G341AEFJ-LB ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET (Industrial Grade)
BD9C601EFJ BD9C601EFJ ECAD Model ROHM Semiconductor 4.5V to 18V Input, 6.0A Integrated MOSFET 1ch Synchronous Buck DC/DC Converter

985 transistor details Datasheets Context Search

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2006 - MRF9002NR2

Abstract: A113 RO4350 mosfet j133 j239 J122 MARKING
Text: Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET MRF9002NR2 Designed , 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · , Voltage VGS - 0.5, + 15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 W , Characteristic Thermal Resistance, Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level , Characteristic On Characteristics Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system


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PDF MRF9002NR2 MRF9002NR2 A113 RO4350 mosfet j133 j239 J122 MARKING
2005 - J133 mosfet transistor

Abstract: transistor j239 MRF9002NR2 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133
Text: .4 985 3.9 + j15.9 22.6 + j9.3 Z source Z load Transistor 3 Figure 11. Series , lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array N , Performance at 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - , Gate-Source Voltage VGS - 0.5, + 15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 , Characteristic Thermal Resistance, Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level


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PDF MRF9002R2 MRF9002NR2 PFP-16 J133 mosfet transistor transistor j239 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133
2005 - MRF9002NR2

Abstract: No abstract text available
Text: TRANSISTOR 3 Zo = 50 Ω Zo = 50 Ω T3 T2 T1 T2 985 MHz f = 925 MHz 985 MHz f = , .3 23.2 + j10.4 985 4.1 + j15.8 23.0 + j11.1 Zload Ω Transistor 1 VDD = 26 V, IDQ = 25 , lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array N , Performance at 960 MHz, 26 Volts Output Power — 2 Watts Per Transistor Power Gain — 18 dB Efficiency  , Transistor @ TC = 25°C PD 4 W Storage Temperature Range Tstg - 65 to +150 °C


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PDF MRF9002R2 MRF9002NR2 PFP-16
2005 - ON SEMICONDUCTOR J122

Abstract: MRF9002NR2
Text: .3 4.1 + j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 6.0 + j12.3 5.9 + j14.3 5.8 + j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource , POWER MOSFET RF Power Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET , Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for , Drain-Source Voltage Gate-Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage Temperature Range


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PDF MRF9002NR2 PFP-16 MRF9002R2 MRF9002R2 ON SEMICONDUCTOR J122
2002 - motorola MOSFET 935

Abstract: J133 mosfet transistor transistor 955 MOTOROLA sps transistor
Text: ­ j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zin 6.0 ­ j12.3 5.9 ­ j14.3 5.8 ­ j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zin 4.3 , MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL , station equipment. · Guaranteed Performance at 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor , . MAXIMUM RATINGS Rating Drain­Source Voltage Gate­Source Voltage Total Dissipation Per Transistor @ TC =


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola MOSFET 935 J133 mosfet transistor transistor 955 MOTOROLA sps transistor
2005 - power transistor unit j122

Abstract: MRF9002NR2
Text: .3 4.1 + j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 6.0 + j12.3 5.9 + j14.3 5.8 + j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource , Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 1000 MHz, 2 W , Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain and Insertion Phase Flatness · , Rating Drain-Source Voltage Gate-Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage


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PDF MRF9002NR2 MRF9002NR2 power transistor unit j122
2004 - J133 mosfet transistor

Abstract: transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935
Text: Semiconductor, Inc. TRANSISTORS 1 and 2 TRANSISTOR 3 Zo = 50 Zo = 50 T3 T2 T1 T2 985 , TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array , Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain and Insertion , Transistor @ TC = 25°C PD 4 Watts Storage Temperature Range Tstg - 65 to +150 °C , CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case, Single Transistor NOTE - CAUTION - MOS


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PDF MRF9002R2/D MRF9002R2 J133 mosfet transistor transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935
2006 - MRF9002NR2

Abstract: marking us capacitor pf l1 marking Z4 A113 RO4350 transistor A113
Text: Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Capable of Handling 10 , VGS - 0.5, + 15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 W Storage , Resistance, Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level Test Methodology Per , Freescale Semiconductor LAST ORDER 4 APR 09 LAST SHIP 3 OCT 09 RF Power Field Effect Transistor Array , 37 - dBm Characteristic Functional Tests (Per Transistor in Freescale Test Fixture, 50


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PDF MRF9002NR2 MRF9002NR2 marking us capacitor pf l1 marking Z4 A113 RO4350 transistor A113
2007 - transistor A113

Abstract: a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
Text: - 185 TRANSISTORS 1 and 2 TRANSISTOR 3 Zo = 50 T3 985 MHz Zsource f = 925 MHz Zo = 50 , 925 960 985 Zsource 4.5 + j13.3 4.3 + j15.3 4.1 + j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 6.0 + j12.3 5.9 + j14.3 5.8 + j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.3 + j12.2 4.3 + j14.0 3.9 + j15.9 Transistor 3 , RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for


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PDF MRF9002NT1 MRF9002R2 MRF9002R2 transistor A113 a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
2006 - MRF9002NR2

Abstract: RO4350 J104 J158
Text: TRANSISTOR 3 Zo = 50 Zo = 50 f = 925 MHz 985 MHz f = 925 MHz 985 MHz Zsource Zload , .3 23.4 + j9.2 960 4.3 + j15.3 23.2 + j10.4 985 4.1 + j15.8 23.0 + j11.1 Transistor 1 , Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial , Transistor Power Gain - 18 dB Efficiency - 50% · Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 , -0.5, +65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Dissipation Per Transistor


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PDF MRF9002NR2 PFP-16 MRF9002NR2 RO4350 J104 J158
2005 - J133 mosfet transistor

Abstract: ON SEMICONDUCTOR J122 MRF9002R2 transistor a113 a113 transistor marking transistor RF
Text: Device Data Freescale Semiconductor TRANSISTORS 1 and 2 TRANSISTOR 3 Zo = 50 T3 985 MHz , , IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.5 + j13.3 4.3 + j15.3 4.1 + j15.8 Transistor , j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.3 + j12.2 4.3 , POWER MOSFET RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET , Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for


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PDF MRF9002NT1 MRF9002R2 MRF9002R2 J133 mosfet transistor ON SEMICONDUCTOR J122 transistor a113 a113 transistor marking transistor RF
2004 - motorola rf Power Transistor

Abstract: No abstract text available
Text: DATA TRANSISTORS 1 and 2 TRANSISTOR 3 Zo = 50 T3 985 MHz Zsource f = 925 MHz Zo = 50 , 925 960 985 Zsource 4.5 + j13.3 4.3 + j15.3 4.1 + j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 6.0 + j12.3 5.9 + j14.3 5.8 + j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.3 + j12.2 4.3 + j14.0 3.9 + j15.9 Transistor 3 , Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N -


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola rf Power Transistor
2002 - J239

Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
Text: ZOL* T3 ZOL* 985 MHz TRANSISTORS 1 and 2 TRANSISTOR 3 VDD = 26 V, IDQ = 25 mA, Pout , .4 985 Z 22.6 ­ j9.3 Transistor 3 Figure 10. Series Equivalent Input and Output Impedance , Sub­Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N­Channel Enhancement­Mode , Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain and Insertion Phase Flatness , Vdc Gate­Source Voltage VGS ­0.5, +15 Vdc Total Dissipation Per Transistor @ TC = 25


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PDF MRF9002R2/D MRF9002R2 J239 motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
2006 - MRF9002NR2

Abstract: No abstract text available
Text: Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial , Transistor Power Gain — 18 dB Efficiency — 50% • Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 , Per Transistor @ TC = 25°C PD 4 W Storage Temperature Range Tstg -ā65 to +150 , , Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 , Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system) VGS1 + C7 Z1 Z4 Z5


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PDF MRF9002NR2 PFP-16 MRF9002NR2
2001 - J133 mosfet transistor

Abstract: transistor 955 MOTOROLA
Text: .3 4.3 ­ j15.3 4.1 ­ j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zin , 985 Zin 4.3 ­ j12.2 4.3 ­ j14.0 3.9 ­ j15.9 Transistor 3 ZOL* 23.1 ­ j6.5 22.8 ­ j8.4 22.6 ­ j9.3 Z , MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL , equipment. · Guaranteed Performance at 960 MHz, 26 Volts Output Power ­ 2 Watts Per Transistor Power Gain ­ , . MAXIMUM RATINGS Rating Drain­Source Voltage Gate­Source Voltage Total Dissipation Per Transistor @ TC =


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D J133 mosfet transistor transistor 955 MOTOROLA
1998 - BYT 56M diode

Abstract: IC4 7805 98c86 eeprom programmer schematic easy design universal eeprom programmer schematic AN-985 coil 2n2222a 98C86A 7805 12v to 5v HiSeC
Text: AN- 985 Fairchild Application Note 985 Designing and Programming a Complete HiSeCTM-based , visual cue the device is transmitting. The TX output pin controls the base of an NPN transistor , which , waveform details for all bit coding formats are given in the data sheet for the NM95HS01/02 HiSeC Rolling Code Generator. A few details of their particular usage in transmitter applications is discussed here , bit coding formats will be inverted. TxPol = 0 should be used to drive the base of an NPN transistor


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PDF AN-985 NM95HS01/02 MM57HS BYT 56M diode IC4 7805 98c86 eeprom programmer schematic easy design universal eeprom programmer schematic AN-985 coil 2n2222a 98C86A 7805 12v to 5v HiSeC
2001 - DO103

Abstract: 985 transistor DO148 DO63 DO134 DO93 DO107 DO147 DO117 DO143
Text: data is high, the driver output transistor goes on. When it is low, the driver output transistor goes , -78.8 -78.8 -78.8 -78.8 -78.8 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 Pad No. 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 , -562.5 -505.5 -448.5 Y 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5 98.5 11.5


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PDF 192-bit S-4662AWI S-4662AWI DO191 DO192 1000H DO103 985 transistor DO148 DO63 DO134 DO93 DO107 DO147 DO117 DO143
2006 - 60GHz transistor

Abstract: SFT-9400B InP transistor HEMT 60Ghz SFT9400B OC-768 98T2 InP HBT transistor low noise
Text: performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE , than 0.3VDC. Refer to the Application Circuit for connection details . 5 resistor is optional but , . Refer to the Application Circuit "A" for connection details with Offset OverrideTM operational. If , details . 5 resistor is optional but recommended for best performance. VCC2 5 Ohm 100 pF 15 16 , for connection details with Offset OverrideTM operational. If offset voltage override is not employed


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PDF SFT-9400B 60GHz SFT-9400B 43Gb/s 40GbE, 100GbE 50GHz 60GHz transistor InP transistor HEMT SFT9400B OC-768 98T2 InP HBT transistor low noise
98c86

Abstract: HiSeC XTAL 10mHZ TRANSISTOR BJ 032 OKI ignition TRANSISTOR BJ 033 putchar AN985 eeprom programmer schematic easy design universal 98C86A
Text: AN- 985 Designing and Programming a Complete HiSeCTM-based RKE System INTRODUCTION This , code listings to assist the designer in developing a complete RKE system. Application Note 985 s e , transmitting. The TX output pin controls the base of an NPN transistor , which forms a tuned RF amplifier based , applications. Complete waveform details for all bit coding formats are given in the data sheet for the NM95HS01/02 HiSeC Rolling Code Generator. Afew details of their particular usage in transmit ter applications


OCR Scan
PDF AN-985 NM95HS01/02 MM57HS NM95HSPROG. 98c86 HiSeC XTAL 10mHZ TRANSISTOR BJ 032 OKI ignition TRANSISTOR BJ 033 putchar AN985 eeprom programmer schematic easy design universal 98C86A
TO-202 transistor

Abstract: thyristor 406 thyristor SCR 406 scr To 202 SCR TRIAC 0406 transistor AG 307 202 N thyristor
Text: Package Details - TO-202 Thyristor Mechanical Drawing SYMBOL A B C D E F (DIA) G H J K L M N DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.057 0.061 1.45 1.55 0.019 0.021 0.49 0.52 0.175 0.180 4.44 4.56 0.376 0.388 9.55 9.85 0.118 0.134 3.00 3.40 0.124 0.126 3.15 3.20 0.035 0.043 0.90 1.10 0.023 0.028 0.59 0.71 0.098 0.102 2.49 2.59 0.459 0.559 11.66 , Specification TO-202 Transistor Case Available with Pb(lead)-free plating* Device average mass . . . . . .


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PDF O-202 1440mg SnPb20 22-December TO-202 transistor thyristor 406 thyristor SCR 406 scr To 202 SCR TRIAC 0406 transistor AG 307 202 N thyristor
2005 - Bv 42 transistor

Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC
Text: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various , =-400mA* I C =-4A, I B =-400mA* Base-emitter saturation voltage V BE(SAT) - 985 -1100 mV , 5 SEMICONDUCTORS ZXTP2013G PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions


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PDF ZXTP2013G OT223 -100V OT223 ZXTP2013GTA ZXTP2013GTC DEV26100 Bv 42 transistor zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC
2003 - ZX5T953GTA

Abstract: ZX5T953G ZX5T953GTC x5t953
Text: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits , ) - 985 -1100 mV Base-emitter turn-on voltage V BE(ON) -920 -1050 mV Static , DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches


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PDF ZX5T953G OT223 -100V OT223 ZX5T953GTA ZX5T953GTC ZX5T953GTA ZX5T953G ZX5T953GTC x5t953
2010 - P89lpc980

Abstract: 80C51 MANUAL P89LPC985 80C51 P89LPC980FD
Text: P89LPC980/982/983/ 985 8-bit microcontroller with accelerated two-clock 80C51 core, 4 kB/8 kB , description The P89LPC980/982/983/ 985 is a single-chip microcontroller, available in low cost packages , the P89LPC980/982/983/ 985 in order to reduce component count, board space, and system cost. 2 , . P89LPC980/982/983/ 985 NXP Semiconductors 8-bit microcontroller with accelerated two-clock 80C51 core , /982/983/ 985 when internal reset option is selected. Four interrupt priority levels. Eight keypad


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PDF P89LPC980/982/983/985 80C51 10-bit P89LPC980/982/983/985 64-byte P89LPC980 80C51 MANUAL P89LPC985 P89LPC980FD
2010 - Not Available

Abstract: No abstract text available
Text: P89LPC980/982/983/ 985 8-bit microcontroller with accelerated two-clock 80C51 core, 4 kB/8 kB , description The P89LPC980/982/983/ 985 is a single-chip microcontroller, available in low cost packages , the P89LPC980/982/983/ 985 in order to reduce component count, board space, and system cost. 2 , and reset options. P89LPC980/982/983/ 985 NXP Semiconductors 8-bit microcontroller with , power and ground connections are required to operate the P89LPC980/982/983/ 985 when internal reset


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PDF P89LPC980/982/983/985 80C51 10-bit P89LPC980/982/983/985 64-byte P89LPC980
2010 - Not Available

Abstract: No abstract text available
Text: P89LPC980/982/983/ 985 8-bit microcontroller with accelerated two-clock 80C51 core, 4 kB/8 kB , description The P89LPC980/982/983/ 985 is a single-chip microcontroller, available in low cost packages, based , P89LPC980/982/983/ 985 in order to reduce component count, board space, and system cost. 2. Features 2.1 , P89LPC980/982/983/ 985 8-bit microcontroller with accelerated two-clock 80C51 core 2.2 Additional , required to operate the P89LPC980/982/983/ 985 when internal reset option is selected. Four interrupt


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PDF P89LPC980/982/983/985 80C51 10-bit P89LPC980/982/983/985 64-byte P89LPC980
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