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F2953/32 BK103 Alpha Wire HEAT SHRINK TUBE 3/32 BK 25X4'
F2953/32 BK061 Alpha Wire HEAT SHRINK TUBE 3/32 BK 32X6
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F2953/32-BK103 Alpha Wire Master Electronics 171 $1.24 $0.96
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2010 - AN-994

Abstract: IRF2804
Text: PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175


Original
PDF 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF EIA-418. O-220AB AN-994 IRF2804
IRF2804

Abstract: No abstract text available
Text: PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0mΩ‰ G Description ID = 75A S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175Â


Original
PDF 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF EIA-418. O-220AB IRF2804
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