The Datasheet Archive

Top Results (2)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
CC1190RGVT CC1190RGVT ECAD Model Texas Instruments 850 - 950MHz RF front end 16-VQFN -40 to 85
CC1190RGVR CC1190RGVR ECAD Model Texas Instruments 850 - 950MHz RF front end 16-VQFN -40 to 85
SF Impression Pixel

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Abracon Corporation
ABU5-81.950MHZ COMMUNICATION CRYSTAL UM-5
ABU5-81.950MHZ ECAD Model
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Abracon Corporation
ASA-40.950MHZ-L-T XTAL OSC XO 40.9500MHZ HCMOS SMD
ASA-40.950MHZ-L-T ECAD Model
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Abracon Corporation
ASA1-40.950MHZ-L-T XTAL OSC XO 40.9500MHZ HCMOS SMD
ASA1-40.950MHZ-L-T ECAD Model
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Abracon Corporation
ASA-40.950MHZ-L-T3 XTAL OSC XO 40.9500MHZ HCMOS SMD
ASA-40.950MHZ-L-T3 ECAD Model
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Abracon Corporation
ASA2-40.950MHZ-L-T XTAL OSC XO 40.9500MHZ HCMOS SMD
ASA2-40.950MHZ-L-T ECAD Model
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Abracon Corporation
ABU5-106-20.950MHZ COMMUNICATION CRYSTAL UM-5
ABU5-106-20.950MHZ ECAD Model
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Abracon Corporation
ASA2-40.950MHZ-L-T3 XTAL OSC XO 40.9500MHZ HCMOS SMD
ASA2-40.950MHZ-L-T3 ECAD Model
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Digi-Key ASA2-40.950MHZ-L-T3 Reel 0 3,000 - - - - $1.50255 Buy Now
Avnet Americas ASA2-40.950MHZ-L-T3 Reel 0 28 Weeks 3,000 - - - - $0.8384 Buy Now
Newark ASA2-40.950MHZ-L-T3 TAPE & REEL FULL 0 3,000 - - - - $1.58 Buy Now
Onlinecomponents.com ASA2-40.950MHZ-L-T3 0 - - - - $1.25 Buy Now
Master Electronics ASA2-40.950MHZ-L-T3 0 - - - - $1.25 Buy Now
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Sager ASA2-40.950MHZ-L-T3 0 - - - - - Buy Now
Abracon Corporation
ASA1-40.950MHZ-L-T3 XTAL OSC XO 40.9500MHZ HCMOS SMD
ASA1-40.950MHZ-L-T3 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Digi-Key ASA1-40.950MHZ-L-T3 Reel 0 3,000 - - - - $1.50255 Buy Now
Avnet Americas ASA1-40.950MHZ-L-T3 Reel 0 28 Weeks 3,000 - - - - $0.8384 Buy Now
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Abracon Corporation
ABU5-20.950MHZ-20-A1R COMMUNICATION CRYSTAL UM-5
ABU5-20.950MHZ-20-A1R ECAD Model
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VALPEY-FISCHER
VF150A-9.99950MHZ
VF150A-9.99950MHZ ECAD Model
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Bristol Electronics VF150A-9.99950MHZ 50 2 - $2.912 $2.24 $2.24 $2.24 Buy Now

950MHz Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Material phycomp

Abstract: 225 antenna Phycomp 4311
Text: WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~ 950MHz Product Specification1 (Preliminary) QUICK REFERENCE DATA Size 16.5*14*0.9 mm Working Frequency 850~ 950MHz Gain 1.5 dBi Max VSWR , Multilayer Ceramic Antenna (LP Mode) for 850~ 950MHz Grant/Cliff. spec.doc Oct. 14, 02 PHYCOMP Ltd , Mar. 13, 02 Multilayer Ceramic Antenna (LP Mode) for 850~ 950MHz Grant/Cliff. spec.doc Oct. 14 , Mode) for 850~ 950MHz Grant/Cliff. spec.doc Oct. 14, 02 PHYCOMP Ltd. 4311 119 00087


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PDF 950MHz 260oC, AN0870000716141B Material phycomp 225 antenna Phycomp 4311
circuit board satellite tuner

Abstract: low-noise L-band tuner schematic circuit board satellite tuner MAX2108 AN1986 line AMPLIFIER satellite APP1986 MAX4145 L-band Tuner 950-MHz
Text: REP026: Direct-Conversion Tuner Optimized for Operation from 950MHz to 1750MHz Abstract: This , 950MHz to 1750MHz operation. Rapid engineering prototypes are real circuits that Maxim application , the MAX2108 direct-conversion tuner for operation from 950MHz to 1750MHz. A reference evaluation , operating frequency range spans from 950MHz to 2150MHz. The MAX2108 includes a low-noise amplifier with , divide-by-32/33 prescaler. Specifications for Optimized Operation at 950MHz to 1750MHz Item Requirements


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PDF REP026: 950MHz 1750MHz MAX2108 1750MHz -20dBm 1749MHz, 1751MHz, 1740MHz. circuit board satellite tuner low-noise L-band tuner schematic circuit board satellite tuner AN1986 line AMPLIFIER satellite APP1986 MAX4145 L-band Tuner 950-MHz
Material phycomp

Abstract: 12NC ordering code 4311 AN0870000716141F
Text: WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~ 950MHz Product Specification1 (Preliminary) QUICK REFERENCE DATA Working Frequency 850~ 950MHz Gain 1.5 dBi Max VSWR 2 max Polarization , 850~ 950MHz Grant/Cliff. spec.doc 2002-01-07 PHYCOMP Ltd. 4311 119 00087 Page 1/7 sheet , Multilayer Ceramic Antenna (LP Mode) for 850~ 950MHz Grant/Cliff. spec.doc 2002-01-07 PHYCOMP Ltd , Preliminary use only Oct. 24, 01 Multilayer Ceramic Antenna (LP Mode) for 850~ 950MHz Grant/Cliff


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PDF 950MHz 260oC, 16-digit AN0870000716141F 870MHz 80MHz Material phycomp 12NC ordering code 4311 AN0870000716141F
2011 - mos 4069

Abstract: No abstract text available
Text: Transistor, 175MHz, 950MHz , 4W DESCRIPTION RD04HMS2 is MOS FET type transistor specifically OUTLINE , =14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f= 950MHz 2. Integrated gate protection diode 2 3 (0.25 , , 175MHz, 950MHz , 4W ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH , =10V, VDS=0V VDS=12V, IDS=1mA f= 950MHz *,VDS=12.5V, Pin=0.2W, Idq=0.1A f=175MHz*,VDS=12.5V, Pin=0.2W, Idq , ) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz , 4W TYPICAL CHARACTERISTICS


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PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Oct2011 mos 4069
2011 - RD04HMS2

Abstract: Handling Precautions for MOSFET 043mm 14dBtyp
Text: RD04HMS2 6.0+/-0.15 0.2+/-0.05 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz , 4W , Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f= 950MHz 2. Integrated gate , =1mA f= 950MHz *,VDS=12.5V, Pin=0.2W, Idq=0.1A f=175MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A VDS=15.2V, Po , , Silicon MOSFET Power Transistor, 175MHz, 950MHz , 4W TYPICAL CHARACTERISTICS (These are only typical , HANDLING PRECAUTIONS RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz , 4W


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PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Handling Precautions for MOSFET 043mm 14dBtyp
AN0870000716141F

Abstract: 225 antenna Material phycomp
Text: WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~ 950MHz Product Specification1 (Preliminary) QUICK REFERENCE DATA Working Frequency 850~ 950MHz Gain 1.5 dBi Max VSWR 2 max Polarization , 850~ 950MHz Grant/Cliff. spec.doc 2002-01-07 PHYCOMP Ltd. 4311 119 00087 Page 1/7 sheet , Antenna (LP Mode) for 850~ 950MHz Grant/Cliff. spec.doc 2002-01-07 PHYCOMP Ltd. 4311 119 00087 , only Oct. 24, 01 Multilayer Ceramic Antenna (LP Mode) for 850~ 950MHz Grant/Cliff. spec.doc


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PDF 950MHz 260oC, 16-digit AN0870000716141F 870MHz 80MHz AN0870000716141F 225 antenna Material phycomp
1997 - TSA5055

Abstract: MAX1002 MAX1003 MAX2102 MAX2102CWI MAX4216
Text: Correction o Operates from Single +5V Supply o 950MHz to 2150MHz Input Frequency Range* o On-Chip , using a broadband I/Q downconverter. Operating frequency range spans from at least 950MHz to 2150MHz , Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p. 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 4) -19 RFIN Minimum Single-Carrier Input Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p. 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz


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PDF 950MHz 2150MHz -19dBm -69dBm 1450MHz) MAX1002/MAX1003 20Msps) 40Mbps, 24MHz, 16MHz, TSA5055 MAX1002 MAX1003 MAX2102 MAX2102CWI MAX4216
2007 - Not Available

Abstract: No abstract text available
Text: ANTENNA PRODUCTS WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~ 950MHz Product Specification QUICK , Termination 50 -55~85 oC Ni/Sn (Environmentally-Friendly Leadless) 16.5*14*0.9 mm 850~ 950MHz 1.5 dBi Max 2 max , , 2006, V4 Print date 07/06/05 2006/8/25 v4 Multilayer Ceramic Antenna (LP Mode) for 850~ 950MHz , WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~ 950MHz Product Specification QUICK REFERENCE DATA Size , *0.9 mm 850~ 950MHz -3.41 dBi Max 2.5 max Linear Omni-directional Special Environmental Concerns


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PDF 950MHz 870MHz 260oC, 950MHz CAN4313 000871B
2010 - RD04HMS2

Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
Text: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz , 4W DESCRIPTION 6.0+/-0.15 , Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f= 950MHz , Efficiency VSWRT Load VSWR Tolerance CONDITIONS VDS=37V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f= 950MHz , Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz , 4W TYPICAL CHARACTERISTICS (These are only , HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz , 4W VHF-band


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PDF RD04HMS2 175MHz, 950MHz, 14dBtyp. 950MHz UHF/890-950MHz RD04HMS2 JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
2010 - CDMA200

Abstract: Analog Voltage Variable Attenuator JESD51-7
Text: PRF = -10dBm, fRF = 950MHz to 2150MHz, VCTRL = +1.0V, TC = -40°C to +85°C. Typical values are for TC , .) PARAMETER Insertion Loss SYMBOL IL TC = +25NC TYP MAX 950MHz to 1500MHz MIN 4.4 6.3 950MHz to 2150MHz 4.4 7.0 TC = -40NC to +85NC Loss Variation Over Temperature , 950MHz to 1500MHz 36 44.7 950MHz to 2150MHz 33 44.7 dB Average Attenuation-Control , +25°C 250MHz 500MHz -20 500MHz -20 4 -30 -30 950MHz 2150MHz 950MHz -40 0


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PDF 250MHz 4000MHz MAX19790 10dB/V. 20dB/V. 36-pin T3666 MAX19790 CDMA200 Analog Voltage Variable Attenuator JESD51-7
2011 - Not Available

Abstract: No abstract text available
Text: Transistor, 175MHz, 950MHz , 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22 , =5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f= 950MHz 2. Integrated gate protection diode , Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz , 4W ELECTRICAL CHARACTERISTICS (Tc=25° UNLESS , =0V VDS=12V, IDS=1mA f= 950MHz *,VDS=12.5V, Pin=0.2W, Idq=0.1A f=175MHz*,VDS=12.5V, Pin=0.2W, Idq , RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz , 4W TYPICAL CHARACTERISTICS (These


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PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz
gdc tv tuner

Abstract: PT 2102 ic TDC 1013 AX210
Text: +5V Supply 950MHz to 2150MHz Input Frequency Range*, On-Chip Quadrature Generator, Dual-Modulus , MAX 2150 UNITS MHz Refers to single-carrier Dower generating V iout = V qout = 0.5Vp-p 950MHz < fRFiN < 2150MHz, 950MHz < fLO < 2150MHz (Note 4) Refers to single-carrier power generating V iout = Vq out = 0.5Vp-p. 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 4) 1V < VAGC < 4V -19 dBm , -69dBm to -59dBm fRFIN = 950MHz to 2150MHz, 50Q source -0.5 2.3:1 dB/dB Maximum Power of


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PDF MAX2102+ MAX2102 2150MHz. MAX2102. 40Mbps, 24MHz, 16MHz, gdc tv tuner PT 2102 ic TDC 1013 AX210
2011 - SAW Filter

Abstract: IF SAW Filter
Text: Ordering Code / Part Number Product Description 813-SL95.0M-59A 95.0MHz IF SAW Filter 59.40MHz , Oscilent Part Number 813-SL95.0M-59A 95.0MHz IF SAW Filter 59.40MHz Bandwidth January 2011 Rev A , -SL95.0M-59A January 2011 Rev A 95.0MHz IF SAW Filter 59.40MHz Bandwidth Maximum Ratings Parameters Description , Rev A 95.0MHz IF SAW Filter 59.40MHz Bandwidth Frequency Response Bandwidth at –1.0 dB , www.oscilent.com Oscilent Part Number 813-SL95.0M-59A January 2011 Rev A 95.0MHz IF SAW Filter 59.40MHz


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PDF 813-SL95 0M-59A 40MHz J-STD-020C 2002/95/EC SAW Filter IF SAW Filter
Not Available

Abstract: No abstract text available
Text: IFLK1 IFLK2 IFLK3 Measurement conditions No signal fin = 950MHz , flF = 480MHz fin fin fin fin fin , Unit mA dB dB dB dB dB dB dBm dBm dBm 1 Current consumption = 1450MHz, = 2050MHz, = 950MHz , = , 2200MHz fOSC = 2200 to 2530MHz Pin = -25dBm fin = 950MHz + 960MHz fout = 380MHz + 400MHz S/I of 380MHz and , /Hz dBc/Hz n pF 10 IF output VSWR 11 RF input Impedance = 400MHz f = 950MHz *1) Measured , POSC1 Po(sat) RFLK1 IFLK1 IM3 fin Measurement conditions No signal = 950MHz , = 950MHz , fiF Min


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PDF CXA3008N-1/-2 CXA3008N-1 CXA3008N-1) CXA3008N-2) 480MHZ) 470MHZ) 935MHz, 940MHz) CXA3008N-1/-2 CXA300SN-1/-2
Not Available

Abstract: No abstract text available
Text: , tiF = 480MHz 16 19.5 24.5 dB NF1 fin = 950MHz , fiF = 460MHz 15.5 16.5 dB , CG3 2 Conversion gain *1 fin = 950MHz , fiF = 480MHz fin = 2050MHz, fiF = 480MHz 17.5 19 , fose = 2200 to 2530MHz -28 dBm Pin = -25dBm fin = 950MHz + 960MHz IM3 fout = 380MHz + , IFVSWR f = 400MHz 1.2 f = 950MHz 270 n 4 PF nt Cn *1) Measured value for , 35.5 55.0 73.5 mA CG1 fin = 950MHz , fiF = 480MHz 15.5 20 24 dB CG2 fin


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PDF CXA3008N-11-2 CXA3008N-1/-2 CXA3008N-1 00MHz CXA3008N-1/-2 16P1N SSOP-16P-L01
2010 - Analog Voltage Variable Attenuator

Abstract: JESD51-7
Text: PRF = -10dBm, fRF = 950MHz to 2150MHz, VCTRL = +1.0V, TC = -40°C to +85°C. Typical values are for TC , +25NC TYP MAX 950MHz to 1500MHz MIN 4.4 6.3 950MHz to 2150MHz 4.4 7.0 TC = , Attenuation-Control Range AR Two attenuators, VCTRL = +1.0V to +4.0V, TC = +25NC 22 950MHz to 1500MHz 36 44.7 950MHz to 2150MHz 33 44.7 dB Average Attenuation-Control Slope VCTRL = , +25°C 250MHz 500MHz -20 500MHz -20 4 -30 -30 950MHz 2150MHz 950MHz -40 0


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PDF 250MHz 4000MHz MAX19790 10dB/V. 20dB/V. 36-pin T3666 MAX19790 Analog Voltage Variable Attenuator JESD51-7
2010 - Not Available

Abstract: No abstract text available
Text: 4.75V to 5.25V, RF ports are driven from 50I sources, input PRF = -10dBm, fRF = 950MHz to 2150MHz, VCTRL , Attenuation-Control Range AR Two attenuators, VCTRL = +1.0V to +4.0V, TC = +25NC 950MHz to 1500MHz 950MHz to 2150MHz , TC = -40NC to +85NC CONDITIONS 950MHz to 1500MHz 950MHz to 2150MHz MIN TYP 4.4 4.4 0.6 23.1 69.6 36.3 , -30 2150MHz -40 4000 1 2 VCTRL (V) 3 950MHz 4 -30 950MHz 2150MHz -40 1 2 VCTRL (V) 3 4 RF , . 4000MHz 100 50 0 500MHz -50 250MHz 1 2 VCTRL (V) 3 4 2150MHz MAX19790 toc09 0 250MHz, 500MHz, 950MHz


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PDF 250MHz 4000MHz MAX19790 MAX19790 10dB/V. 20dB/V. 36-pin
1997 - TSA5055

Abstract: MAX2102 MAX1002 MAX1003 MAX2102CWI MAX4216 satellite transponder qpsk demod 10pF capacitor
Text: from Single +5V Supply o 950MHz to 2150MHz Input Frequency Range* o On-Chip Quadrature Generator , broadband I/Q downconverter. Operating frequency range spans from at least 950MHz to 2150MHz. The IC , Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p. 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 4) -19 RFIN Minimum Single-Carrier Input Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p. 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz


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PDF 950MHz 2150MHz -19dBm -69dBm 1450MHz) MAX1002/MAX1003 20Msps) 40Mbps, 24MHz, 16MHz, TSA5055 MAX2102 MAX1002 MAX1003 MAX2102CWI MAX4216 satellite transponder qpsk demod 10pF capacitor
2002 - MAX2102

Abstract: MAX2102CWI MAX2105 MAX2105CWI 22pf capacitor Dual-Gate Mosfet
Text: Low-Cost Bipolar Design, Lowest Cost Architecture Operate from a Single +5V Supply 950MHz to 2150MHz , 950MHz to 2150MHz. The ICs include a low-noise amplifier (LNA) with automatic gain control (AGC), two , VQOUT = 0.5Vp-p, 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 2) -19 RFIN Minimum Single-Carrier Input Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p, 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 2) MAX2102 -69 MAX2105 -60 0.5V VAGC 4V


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PDF MAX2102 -69dBm. MAX2105 -60dBm. MAX2105 950MHz 2150MHz -69dBm -19dBm MAX2102) MAX2102CWI MAX2105CWI 22pf capacitor Dual-Gate Mosfet
2006 - RF6003

Abstract: lna 30MHz to RF2722 J156 RF2722PCBA-41X quadrature mixer t120u DCS 1800 RX SAW Filter
Text: Power Down Current Active Current RX VLIF Mode Low Band (850/ 950MHz ) 64 77 91 mA All , circuits on, (LNA_CURR=00, MIX_CURR=00) Low Band (850/ 950MHz ) 62.5 75.5 89.5 mA All , circuits on, (LNA_CURR=00, MIX_CURR=00) Low Band (850/ 950MHz ) 19.5 25 mA VCC =2.8V, PIN , channel differential as output. Receiver System Cascaded Noise Figure Low Band (850/ 950MHz ) 2.8 , ) 336-678-5570 or sales-support@rfmd.com. Rev A4 DS050919 RF2722 Proposed Low Band (850/ 950MHz ) 4.8


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PDF RF2722 32-Pin, GSM850, 203mm 330mm 025mm DS050919 RF6003 lna 30MHz to RF2722 J156 RF2722PCBA-41X quadrature mixer t120u DCS 1800 RX SAW Filter
2008 - 900mhz frequency generator

Abstract: amplifier mixer circuit diagram LT5511 mixer 950-MHz DC426A
Text: 's center frequency to 950MHz. Perform mixer conversion gain, and 1dB compression measurements. Set the , demonstrate the capabilities of the LT 5511 high signal level upconverting mixer IC for 950MHz infrastructure , . The LT5511 mixer delivers +17dBm typical input 3rd order intercept at 950MHz , and +15.5dBm IIP3 at , DC426A demo board is optimized to upconvert a 50MHz IF input to 950MHz RF output with the LO injected , . (IIP2 = 2 * P1 ­ P2 ­ Gc, where P1 is the power level of the desired output at 950MHz , P2 is the


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PDF DC426A 950MHz LT5511 50MHz, 51MHz. 949MHz 950MHz, 948MHz 900mhz frequency generator amplifier mixer circuit diagram mixer 950-MHz
2013 - sf16

Abstract: No abstract text available
Text: . 940MHz 950MHz 10 min. 940MHz 950MHz 10 min. — — — — — — — — — 950MHz 1000MHz 27 min. 950MHz 1000MHz 27 min. — 1000MHz 2450MHz 27 min. 1000MHz


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PDF 92MHz sf16
n713

Abstract: No abstract text available
Text: . Operating frequency ranqe spans from at least 950MHz to 2150MHz. ♦ On-Chip Quadrature Generator, Dual-Modulus Prescaler (/64, /65) 4 Operates from Single +5V Supply ♦ 950MHz to 2150MHz Input Frequency , Vqout = o.5Vp-p. 950MHz < fRFiN < 2150MHz, 950MHz < fLO < 2150MHz (Note 4) -19 RFIN Minimum Single-Carrier Input Power Refers to single-carrier power generating Viout = Vqout = o.5Vp-p. 950MHz < fRFIN < 2 1 50MHz, 950MHz < fLO < 2150MHz (Note 4) AGC Range 1V < VAGC < 4V dBm -69 50


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PDF MAX2102 950MHz 2150MHz. 2150MHz MS013 102rm MS013-XX MAX2102 n713
1998 - tsa5055

Abstract: MAX2102CWI MAX2102EVKIT capacitor 2200 micro farad 25V MAX2102 MAX2105 MAX2105CWI Dual-Gate Mosfet
Text: Low-Cost Bipolar Design, Lowest Cost Architecture o Operate from a Single +5V Supply o 950MHz to 2150MHz , 950MHz to 2150MHz. The ICs include a low-noise amplifier (LNA) with automatic gain control (AGC), two , VQOUT = 0.5Vp-p, 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 2) -19 RFIN Minimum Single-Carrier Input Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p, 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 2) MAX2102 -69 MAX2105 -60 0.5V VAGC 4V


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PDF MAX2102 -69dBm. MAX2105 -60dBm. MAX2105 950MHz 2150MHz -69dBm -19dBm MAX2102 tsa5055 MAX2102CWI MAX2102EVKIT capacitor 2200 micro farad 25V MAX2105CWI Dual-Gate Mosfet
Not Available

Abstract: No abstract text available
Text: Bipolar Design, Lowest Cost Architecture ♦ Operates from Single +5V Supply ♦ 950MHz to 2150MHz , 950 Refers to single-carrier power generating 950MHz < fRFIN < 2150MHz, 950MHz < f|_o < 2150MHz (Note 4) -19 dBm Refers to single-carrier power generating 2 -69 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 4) 50 dBm dB V M y iX IV M D i r e c t - C o n v e r s , across Band fRFIN = 950MHz to 2150MHz, 50Q. source 2.3:1 Maximum Power of Spurious


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PDF 950MHz 2150MHz MAX2102 2150MHz. MS013 102mm 013-XX MAX2102
Supplyframe Tracking Pixel