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2012 - IRLML0060

Abstract: IRLML0100 IRLML2060 IRLML9301 irlml0030 IRLML9303 IRLML0040 irlml2030 IRLML206 TO-236A
Text: PD - 94892D IRLML2502PbF HEXFET® Power MOSFET l l l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free Halogen-Free G 1 3 D S 2 VDSS = 20V RDS(on) = 0.045 Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that


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PDF 94892D IRLML2502PbF OT-23 OT-23illimeters EIA-481 EIA-541. IRLML0060 IRLML0100 IRLML2060 IRLML9301 irlml0030 IRLML9303 IRLML0040 irlml2030 IRLML206 TO-236A
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