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2002 - IRF2804L

Abstract: IRF2804S
Text: PD - 94495B IRF2804S IRF2804L HEXFET® Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS(on) = 2.5m G Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175


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PDF 94495B IRF2804S IRF2804L EIA-418. IRF2804L IRF2804S
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