1997 - 3524CP
Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Text: 2M x 32 SIMM 72 3.3V SO DIMM 72 16M (x8) based / 2k refresh SIMM 72 16M (x4 , ) based / 2k refresh 8M x 32 HB56A832 5V SIMM 72 16M (x4) based / 2k refresh 16M x , 5V SIMM 72 16M (x4) based, 2k cycles self refresh 8M x 36 HB56D836 5V SIMM 72 16M (x4) based, 2k cycles self refresh 16M x 36 HB56A1636 5V SIMM 72 16M (x1) based, 2k cycles self refresh , HB56U132 4M (x4) based 5V 60, 70 SIMM 72 16M (x16) based / 1M x 32 HB56H132 1k cycles 4M (x4) based
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HB56U132
HB56H132
HB56U232
HB56H232
HN62W454B
512kx8
256kx16
HN62W4416N
16Mbit
1Mx16
3524CP
2MX40
RAM128KX8 DIP
HM624256
HM62832
16Mbit FRAM
Dram 168 pin EDO 8Mx8
hm62256
flash 32 Pin PLCC 16mbit
HN27C1024
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1998 - Not Available
Abstract: No abstract text available
Text: UG2M43204(8)RTG(T) 16M Bytes (4M x 32) 72Pin SIMM based on 4M X 16 DRAM General Description Features The UG2M43204(8)RTG(T) is a 4,194,304 bits by 32 SIMM module. The UG2M43204(8)RTG(T) is assembled using 2 pcs of 4Mx16 5V 4K/ 8K refresh DRAM in 50 Pin TSOP package mounted on a 72 Pin printed circuit , UG2M43204(8)RTG(T) Physical Dimension 72 Pin SIMM Module 4.250(107.95) 3.984(101.19) .133(3.38) R , 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Signal NC NC VSS
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UG2M43204
72Pin
4Mx16
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1997 - SO DIMM 72-pin
Abstract: "simm 72 pin" uPD27C8000 2620 dynamic ram simm 72 pin DIMM 72-pin SIMM 72 MC-422000F32 8k refresh simm 72 edo dram 72-pin SO DIMM
Text: (EDO) Access time MAX. (ns) 50 60 50 60 50 60 50 60 50 60 Refresh cycle (cycles/ ms) 8K /64* 4K/64 8K , time MAX. (ns) 50 60 50 60 50 60 50 60 50 60 Refresh cycle (cycles/ ms) 8K /128* 4K/128 8K /128* 4K/128 , ) Access time MAX. (ns) 50 60 50 60 50 60 50 60 Refresh cycle (cycles/ ms) 8K /64* 4K/64 8K /64* 4K/64 , 144-pin SO DIMM 72 -pin SIMM 72 -pin SO DIMM INDEX MENU QUIT s 168-pin 8 Byte DIMM , -pin DIMM Unbuffered type 168-pin DIMM Buffered type 144-pin SO DIMM 72 -pin SIMM 72 -pin SO DIMM
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8K/64*
4K/64
50-pin
32-pin
PD4264405
PD4265405
SO DIMM 72-pin
"simm 72 pin"
uPD27C8000
2620 dynamic ram
simm 72 pin
DIMM 72-pin
SIMM 72
MC-422000F32
8k refresh simm 72
edo dram 72-pin SO DIMM
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HSD16M32M4V
Abstract: HSD32M32M4V HSD8M32M4V simm 72 pin 128MBYTE SIMM 72 8k refresh simm 8k refresh simm 72
Text: SIMM 72 Pin SIMM Ref. Vcc 8K 3.3V 8K 3.3V 8K Feature 133MHz (CL=3) Low , HANBit HSD32M32M4V Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72 -Pin SIMM based on , DQ18 65 A11 · 72 -Pin SIMM Package 18 Vss 42 DQ19 66 A12 · The used device , 72 -PIN SIMM TOP VIEW URL:www.hbe.co.kr REV.1.0 (August.2002) -1- HANBit Electronics Co.,Ltd , Pin SIMM 72 Pin SIMM 72 Pin 32Mx 32 HSD32M32M4V-F12 128MByte 128MByte 32Mx 32
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HSD32M32M4V
128Mbyte
32-Bit
72-Pin
32Mx8,
HSD32M32M4V
72-pin,
HSD16M32M4V
HSD8M32M4V
simm 72 pin
128MBYTE
SIMM 72
8k refresh simm
8k refresh simm 72
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1998 - edo dram 50ns 72-pin simm
Abstract: No abstract text available
Text: UG28E32R(S)8HSG(T) 32M Bytes (8M x 32) 72Pin SIMM based on 8M X 8 DRAM w/Voltage Convertor General Description The UG28E32R(S)8HSG(T) is a 8,388,608 bits by 32 SIMM module. The UG28E32R(S)8HSG(T) is assembled using 4 pcs of 8M x 8 3.3V 4K/ 8K refresh EDO DRAM in 50 Pin TSOP package and a 5V to 3.3V voltage convertor mounted on a 72 Pin printed circuit board. Features · · · · · · · · · · , Dimension 72 Pin SIMM Module 4.250(107.95) 3.984(101.19) .133(3.38) R.062(1.57) .125 DIA±.002(3.18 ±.051
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UG28E32R
72Pin
1000mil)
edo dram 50ns 72-pin simm
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1998 - Not Available
Abstract: No abstract text available
Text: UG2M43204(8)RRG(T) 16M Bytes (4M x 32) 72Pin SIMM based on 4M X 16 DRAM w/Voltage Convertor General Description The UG2M43204(8)RRG(T) is a 4,194,304 bits by 32 SIMM module. The UG2M43204(8)RRG(T) is assembled using 2 pcs of 4Mx16 3.3V 4K/ 8K refresh DRAM in 50 Pin TSOP package and a 5V ~ 3.3V voltage convertor mounted on a 72 Pin printed circuit board. Features · · · · · · · · · · Single +5 + , ) Physical Dimension 72 Pin SIMM Module 4.250(107.95) 3.984(101.19) .133(3.38) R.062(1.57) .125 DIA
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UG2M43204
72Pin
4Mx16
1000mil)
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2001 - Not Available
Abstract: No abstract text available
Text: GENERAL DESCRIPTION 32M Bytes (8M x 32 bits) FPM Mode Unbuffered SIMM w/Voltage Converter based on 4 pcs 8M x 8 DRAM with LVTTL, 4K/ 8K Refresh The UG28C32R(S)8HSG(T) is a 8Mbits x 32 FPM DRAM SIMM module. The UG28C32R(S)8HSG(T) is assembled using 4 pcs of 8M x 8 4K/ 8K refresh FPM DRAMs and a 5V to 3.3V voltage converter mounted on 72 pin unbuffered printed circuit board. PIN ASSIGNMENT (Front View) 72 -Pin SIMM ABSOLUTE MAXIMUM RATINGS · · · · · Voltage Relative to GND Operating Temperature
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UG28C32R
72-Pin
110ns
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2001 - 8k refresh
Abstract: No abstract text available
Text: GENERAL DESCRIPTION 64M Bytes (16M x 32 bits) FPM Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 8M x 8 DRAM with LVTTL, 4K/ 8K Refresh The UG216C32R(S)8HSG(T) is a 16Mbits x 32 FPM DRAM SIMM module. The UG216C32R(S)8HSG(T) is assembled using 8 pcs of 8M x 8 4K/ 8K refresh FPM DRAMs and a 5V to 3.3V voltage converter mounted on 72 pin unbuffered printed circuit board. PIN ASSIGNMENT (Front View) 72 -Pin SIMM ABSOLUTE MAXIMUM RATINGS · · · · · Voltage Relative to GND Operating Temperature
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UG216C32R
16Mbits
72-Pin
110ns
8k refresh
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64 x32 dram
Abstract: No abstract text available
Text: EDO/FP DIMM/ SIMM /SODIMM (Old Code) KMMXXXXXXXXXXXXXXX-X 1 2 3 4 5 6 7 8 9 10 , : DRAM SIMM 5~6. Organization 32 / 36 : x32 / x36 bit 17. Only x32 or x33 PCB V : x32 or x33 PCB 64 / 72 : x64 / x72 bit 7. Process & Operating Voltage Blank : CMOS 5V V : CMOS 3.3V 8~9. Depth 32 : 32M 8 : 8M 10. Refresh 0 : 4K Cycle 2 : 1K Cycle 1 : 1st Rev. 3 : 3rd Rev. 18. Lead , 16 : 16M 4 : 4M 19. "" 1 : 2K Cycle 8 : 8K Cycle 20. Speed 5 : 50ns 6 : 60ns 11
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2001 - dram 72-pin simm 128mb
Abstract: 128MB 72-pin SIMM 1gb ddr 266 pc2100 ecc unbuffered TSOP SDRAM 8mb DIMM 100-pin MT18LSDT3272G TSOP 66 Package PC2100 MT8LSDT3264HG 13E200
Text: x x x x x 16 16 16 4 16 72 -pin SIMM 4MB 8MB 16MB 16MB 32MB 32MB SS DS SS , ) 8K refresh (64Mb based) FA = 168-pin DIMM; unbuffered 4K refresh (16Mb based) 8K refresh (64Mb , 64MB Family SS 8 Meg x 72 2.5V ECC Gold ( 5) 8 Meg x 16 TSOP MT5VDDT872AG Density 128MB 16 Meg x 8 TSOP MT8VDDT1664AG SS 16 Meg x 72 2.5V ECC Gold ( 9) 16 Meg x 8 TSOP , 32 Meg x 72 2.5V ECC Gold (18) 16 Meg x 8 TSOP MT18VDDT3272AG 512MB DS 64 Meg x 64
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PC1600
PC2100)
184-pin
MT4VDDT864AG
MT5VDDT872AG
128MB
MT8VDDT1664AG
MT9VDDT1672AG
256MB
MT16VDDT3264AG
dram 72-pin simm 128mb
128MB 72-pin SIMM
1gb ddr 266 pc2100 ecc unbuffered
TSOP SDRAM
8mb DIMM 100-pin
MT18LSDT3272G
TSOP 66 Package
PC2100
MT8LSDT3264HG
13E200
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1996 - MCM91430
Abstract: Motorola CMOS Dynamic RAM 1M Motorola CMOS Dynamic RAM 1M x 1 1mx1 DRAM DIP MCM511000A mcm511000 1K x4 static ram application note Motorola CMOS Dynamic RAM 16m x 32 TSOP 400 86 MCM69F536B
Text: ) Production Packaging Standard FSRAM Modules 1M x 32 20/25 ns Now 72 Pin SIMM (SG) Uses eight 4M SRAMs MCM321024 512K x 32 20/25 ns Now 72 Pin SIMM (SG) Uses four 4M SRAMs MCM32515 128K x 32 20/25 ns Now 64 Pin SIMM (SG) Uses four 1M SRAMs MCM32128A Motorola , x 32 36 = x 36 Depth: 3 = 8K Address Depth 4 = 16K Address Depth 5 = 32K Address Depth 6 = 64K , (S) MCM94T430 30 (S) MCM94CT4303 30 (S) MCM32100 72 (DG), (D) 60/70
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stan00C
1Mx16
MCM4L4400B
MCM5L4100A
MCM54100A
256Kx16
512Kx8
MCM5L4100A
MCM54100A
MCM91430
Motorola CMOS Dynamic RAM 1M
Motorola CMOS Dynamic RAM 1M x 1
1mx1 DRAM DIP
MCM511000A
mcm511000
1K x4 static ram application note
Motorola CMOS Dynamic RAM 16m x 32
TSOP 400 86
MCM69F536B
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samsung KLM ordering information
Abstract: samsung klm
Text: DRAM DIMM NUMBERING SYSTEM 12 13 KM M 3 72 E 4 1 0 A T T SAMSUNG M e m o ry M o d u le M e m o , -.DRAM BByte SODIMM - 5 . -.-. Old JEDEC DRAM SIMM - 6 , /x36 bit - 39/40 - -x39/x40 bit - 64/ 72 .- , . 8K Cycle Cycle Cycle Cycle 8. C o m p o s itio n C o m p o n e n t - 0 - , . Super low power - G - -Self Refresh Only 13. S p e e d (#5
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1998 - 64Mx4
Abstract: No abstract text available
Text: Supply · Common Data Inputs and Outputs · Extended Data Out Capability (EDO) · 4K/ 8K 64ms Refresh · 3 Variations of Refresh : - RAS only Refresh - CAS before RAS Refresh - Hidden Refresh · Package: Leadless , Power Supply (+3.3V) Ground No Connect * A12 for 8K refresh device. 30A196-00 REV. A This , 16Mx32, 50 - 70ns, SIMM 30A173-11 2 M-Densus High Density Memory Device 512 Megabit CMOS , Refresh Address: A0 - A11 Row Address: A0 - A12 Column Address: A0 - A10 Refresh Address: A0 - A12
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16Mx32,
30A173-11
30A196-00
64Mx4
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Not Available
Abstract: No abstract text available
Text: Four Level QW ord DRAM To CPU Read Buffer CAS-Before-RAS Refresh , Extended Refresh and Self Refresh for EDO/FPM Memory CAS-Before-RAS and Self Refresh for SDRAM Integrated L2 Cache Controller , Supports Suspend Refresh to System Memory Supports Both Compatible SMRAM and Extended SMRAM Mapping SMM W , . DRAM Cycle Tim ing. DRAM Refresh , 58 58 58 61 63 63 63 64 65 67 67 68 68 68 70 70 70 70 72 72 72 5.2.38
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SLC90E42
SLC90E42
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1996 - Not Available
Abstract: No abstract text available
Text: cycling @ tHPC=min. Refresh 4K 8K Max. 60ns 2016 1836 72 Unit mA mA mA Note 1, 2 1, 2 Standby Current , (32M x 72 ) DRAM Module - 16Mx8 based 168-pin DIMM, Non-buffered, ECC Standard : JEDEC Configuration : ECC Access Time : 60ns Operation Mode : EDO Operating Voltage : 3.3V Refresh : 4K/ 8K Device Physicals , Row Addresses for 8K Refresh Module A0~A10 Column Addresses for 8K Refresh Module DQ0~DQ63, CB0~CB7 , (CBR refresh ) Refresh period 4K refresh 8K refresh RAS# precharge to CAS# hold time tWCH tWCS tWP tACP
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SM57232809UD0G6
256MByte
16Mx8
168-pin
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53a15
Abstract: 8086 microprocessor pin description DS1283 DS2340 DS2340T 8086 instruction set nec v40 ibr 273
Text: ¢ Dual 72 -pin SIMM connection scheme supports single-board or expanded operation DESCRIPTION The DS2340 , the DS5340 V40 Softener Chip. In addition, the PACKAGE OUTLINE 72 -Pin SIMM Double-edge Connector , single-board and expanded operations. This scheme allows the Flip Stik to be installed into a 72 -pin SIMM , REFRÃA DMARQO-l\ DMAACK0-1N END\ Ac\ A19-17 72 -PIN SIMM CONNECTOR EDGE "A" > A7-0 72 -PIN SIMM , installed into a 72 -pin SIMM connector in one of two ways to support either single-board or expanded
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DS2340
V40-based
DS2340T
DS1283
72-pin
DS5340
2bl4130
0S2340
DS2340
53a15
8086 microprocessor pin description
8086 instruction set
nec v40
ibr 273
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flash memory 5v 32m
Abstract: rom 1K x 8 wram samsung Sun Ultra AX AL001 spd65 ksd 201
Text: .-. Normal Low power with Self refresh 4. P r o d u c t C V -. -. , ELECTRONICS ORDERING INFORMATION 3. ORDERING INFORMATION DRAM SIMM NUMBERING SYSTEM 1 2 3 4 5 6 7 8 9 , onn ector Organization Process & Pow er Density Refresh K L M - NN Speed Lead Finish & C ustom er , . DRAM 8 Byte DIMM . s - O ld JEDEC DRAM SIMM - 6 . SRAM - 7 . New JEDEC DRAM SIMM - 8
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OT-23
16bit
100ns
120ns
150ns
200ns
flash memory 5v 32m
rom 1K x 8
wram samsung
Sun Ultra AX
AL001
spd65
ksd 201
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1996 - Not Available
Abstract: No abstract text available
Text: @ tRC=min. RAS#=VIL, CAS#, Address cycling @ tPC=min. Refresh 4K 8K 50ns 2736 1836 72 Max. 60ns 2556 1656 72 Unit 70ns 2376 1476 72 mA mA mA Note 1, 2 1, 2 Standby Current ICC2 36 4K 8K 4K 8K 4K , . RAS#=VIL, CAS#, Address cycling @ tHPC=min. Refresh 50ns 4K 2736 8K 1836 72 Max. 60ns 2556 1656 72 Unit , #, CAS# cycling @ tRC=min. RAS#=VIL, CAS#, Address cycling @ tHPC=min. Refresh 50ns 4K 2736 8K 1836 72 , Technologies Column Addresses for 8K Refresh Module Row Addresses for 8K Refresh Module Row and Column
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SM5723240UUD8GU
256MByte
32Mx4
16Mx4)
168-pin
SM57232400UD8GU
SM57232401UD8GU
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2001 - PC133 registered reference design
Abstract: micron dram code 10EB2
Text: 512MB Refresh Count 4K 8K Row Addressing 4K (A0A11) 8K (A0A12) Device Bank Addressing 4 (BA0, BA1) 4 , MHz DDR SDRAM components 256MB (32 Meg x 72 ), 512MB (64 Meg x 72 ) VDD= VDDQ= +2.5V ±0.2V VDDSPD = , banks for concurrent operation Selectable burst lengths: 2, 4, or 8 Auto precharge option Auto Refresh and Self Refresh Modes 15.6µs (256MB), 7.8125µs (512MB) maximum average periodic refresh interval , -26A -265 -202 -26A -265 -202 MODULE CONFIGURATION DENSITY 256MB 32 Meg x 72 256MB 32 Meg x 72 256MB
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256MB,
512MB
184-pin,
256MB
MT16VR25616AG
MT16VR25618AG
MT16VR25618AG-840A1
PC133 registered reference design
micron dram code
10EB2
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2001 - PC133 registered reference design
Abstract: 16 MB Micron EDO SIMM Module mt1l DS1849 10EF1 10EB2
Text: reduce loading · 100 MHz and 133 MHz SDRAM components · ECC-optimized pinout · 512MB (64 Meg x 72 ); 1GB (128 Meg x 72 ) · Single +3.3V ±0.3V power supply · Fully synchronous; all signals registered on , full page · Auto Precharge and Auto Refresh Modes · Self Refresh Mode 512 MB - 64ms, 4,096-cycle refresh 1GB - 64ms 8,192 cycle refresh · LVTTL-compatible inputs and outputs · Serial presence-detect (SPD , - tRCD - tRP 2-2-2 3-3-3 NA ADDRESS TABLE Refresh Count Device Banks Row Addressing Column
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512MB
168-PIN
168-pin,
PC100
PC133
512MB
MT8VR12818AG
MT16VR25616AG
PC133 registered reference design
16 MB Micron EDO SIMM Module
mt1l
DS1849
10EF1
10EB2
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65A3
Abstract: 8086 instruction set 72 PC RAM nec v40 QS5340 60A8 "65a3" 8086 Parallel Ports DS1283 DS2340T
Text: -bit parallel I/O ports ⢠DS2340T provides DS1283 Watchdog Timekeeper Chip ⢠Dual 72 -pin SIMM connection , Chip. In addition, the 72 -Pin SIMM Double-edge Connector DS2340 and DS2340T execute the native , and expanded operations. This scheme allows the Flip Stik to be installed into a 72 -pin SIMM connector , 1\ DMAACKOâ1\ END\ /TC\ A19-17 72 -PIN SIMM CONNECTOR EDGE "A" > A7-0 72 -PIN SIMM CONNECTOR EDGE "B" , Stik PC board itself. This scheme allows the Flip Stik to be installed into a 72 -pin SIMM connector In
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Sbl4130
0003EÃ
DS2340
V40-based
DS2340T
DS2340
256-B
DS2340.
65A3
8086 instruction set
72 PC RAM
nec v40
QS5340
60A8
"65a3"
8086 Parallel Ports
DS1283
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1996 - Not Available
Abstract: No abstract text available
Text: @ tRC=min. RAS#=VIL, CAS#, Address cycling @ tPC=min. Refresh 4K 8K 50ns 2736 1836 72 Max. 60ns 2556 1656 72 Unit 70ns 2376 1476 72 mA mA mA Note 1, 2 1, 2 Standby Current ICC2 36 4K 8K 4K 8K 4K , . RAS#=VIL, CAS#, Address cycling @ tHPC=min. Refresh 50ns 4K 2736 8K 1836 72 Max. 60ns 2556 1656 72 Unit , #, CAS# cycling @ tRC=min. RAS#=VIL, CAS#, Address cycling @ tHPC=min. Refresh 50ns 4K 2736 8K 1836 72 , Technologies Column Addresses for 8K Refresh Module Row Addresses for 8K Refresh Module Row and Column
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SM5723240UUD4GU
256MByte
16Mx4
168-pin
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1996 - Not Available
Abstract: No abstract text available
Text: Technologies Product Category 5 : DRAM SIMM / DIMM Module Data Bus Width 72 : x72 Module Address Depth 32 : 32M , Refresh / Power 4 : 4K Ref. / Standard Power 8 : 8K Ref. / Standard Power Module Configuration B : 200 pin , SM57232407UB6AU Preliminary 256MByte (32M x 72 ) CMOS Synchronous DRAM Module - 16Mx4 based 200-pin DIMM , /Interleave 2 · · · · · · Operating Voltage Refresh Device Physicals Lead Finish Length x Height No. of sides : : : : : : 3.3V 4K/ 8K 400mil TSOP Gold 6.700" x 1.750" Double-sided Functional Diagram REGE CKE0 CS0# DQM RAS
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SM57232407UB6AU
256MByte
16Mx4
200-pin
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1996 - Not Available
Abstract: No abstract text available
Text: Refresh : 4K/ 8K Device Physicals : 400mil SOJ/TSOP Lead Finish : Gold Length x Height : 133.35mm x 27.94mm , for 4K Refresh Module Row Addresses for 8K Refresh Module Column Addresses for 8K Refresh Module Data , tPC=min. Refresh 4K 8K 50ns 1210 810 26 Max. 60ns 1130 730 26 Unit 70ns 1050 650 26 mA mA mA Note 1, 2 1 , cycling @ tPC=min. Refresh 4K 8K 50ns 1264 864 80 Max. 60ns 1184 784 80 Unit 70ns 1104 704 80 mA mA mA Note 1, 2 1, 2 Standby Current ICC2 72 4K 8K 4K 8K 4K 8K 1264 864 1264 1264 704 624 72 1184
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SM5640880UUXUGU
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82439HX
Abstract: CH365 CH135 MLT 22 805 CH341
Text: Refresh â Optional Parity â Single 324-Pin BGA Package â Optional Error Checking and Correction (ECC , line status bits. The TXC provides a 64/ 72 -bit data path to main memory and memory sizes up to 512 , .44 4.4.5. DRAM REFRESH , CopyRight 2003 82439HX (TXC) DRAM Interface The DRAM interface is a 64/ 72 -bit data path that supports both
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430HX
82439HX
512-MB
64-Mb
CH365
CH135
MLT 22 805
CH341
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