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8550SS datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
8550SS 8550SS ECAD Model Others TO-92 Plastic-Encapsulate Transistors Original PDF

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2007 - 8550SS

Abstract: transistor 8550ss 8550SSD 8550ss-d
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 8550SS-C 8550SS-D · · · · · · · Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25 OC) of Power Dissipation. Collector-current 1.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking : 8550SS Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V


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PDF 8550SS-C 8550SS-D -55OC 8550SS transistor 8550ss 8550SSD 8550ss-d
2007 - 8550SSD

Abstract: 8550SS
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 8550SS-C 8550SS-D · · · · · · · Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25 OC) of Power Dissipation. Collector-current 1.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking : 8550SS Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V


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PDF 8550SS-C 8550SS-D -55OC 8550SS 100uAdc, 8550SSD
2005 - transistor+8550ss

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25℃) : 2 W (TC=25℃) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO , 160-300 300-400 Typical Characteristics 8550SS Jiangsu Changjiang Electronics Technology


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PDF 8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ transistor+8550ss
2007 - 8550ss

Abstract: transistor 8550ss
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 8550SS-C 8550SS-D · · · · · · · Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25 OC) of Power Dissipation. Collector-current 1.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking : 8550SS Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V


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PDF 8550SS-C 8550SS-D -55OC 8550SS transistor 8550ss
2005 - Not Available

Abstract: No abstract text available
Text: TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 , D3 85-160 120-200 160-300 300-400 Typical Characteristics 8550SS Bytes


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PDF 8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ
8550SS

Abstract: transistor 8550ss IC800 ic 800 IB-80
Text: 8550SS 8550SS TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM: 1 W (Tamb=25) 1. EMITTER Collector current ICM: -1.5 A - 40 V 2. COLLECTOR Collector-base voltage V(BR)CBO: 3. BASE Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic


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PDF 8550SS -800mA, -50mA 8550SS transistor 8550ss IC800 ic 800 IB-80
Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 8550SS-C 8550SS-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25 OC) of Power Dissipation. Collector-current 1.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking : 8550SS Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information


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PDF 8550SS-C 8550SS-D -55OC 8550SS
2007 - 8550SS

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 8550SS-C 8550SS-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25 OC) of Power Dissipation. Collector-current 1.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking : 8550SS Lead Free Finish/RoHS Compliant ("P" Suffix


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PDF 8550SS-C 8550SS-D -55OC 8550SS 8550SS
2005 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter , 300-400 Typical Characteristics 8550SS Jiangsu Changjiang Electronics Technology


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PDF 8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ
2010 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 8550SS TRANSISTOR (PNP) 1.EMITTER FEATURES General Purpose Switching and Amplification. 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V -1.5 A 1 W IC Collector Current


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PDF 8550SS -100mA -800mA -800mA -80mA -50mA 30MHz
2002 - 8550SS

Abstract: transistor 8550ss
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM : 1W Tamb=25 1.EMITTER Collector current ICM: -1.5 A Collector-base voltage 2. COLLECTOR 3. BASE V(BR)CBO : - 40V Operating and storage junction temperature range T J T stg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Symbol 1 2 3 unless Test otherwise conditions specified MIN TYP MAX UNIT


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PDF 8550SS O--92 270TYP 050TYP 8550SS transistor 8550ss
2004 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A - 40 V 2. COLLECTOR Collector-base voltage V(BR)CBO: 3. BASE Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP


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PDF 8550SS -800mA, -50mA
2014 - MMS8050-L

Abstract: Bd882 2SB1073R 2SD667AC 2SD669AC sot23-3 marking 63 2SD468C marking 2sd1664 8550SS 2SB647C
Text: TO-92 - 8550SS-C 25 1.5 120 200 1 100 0.5 1.2 800 80 100 - - 10 50 PNP TO-92 - 8550SS-D 25 1.5 160 300 1 100 0.5 1.2


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PDF MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L Bd882 2SB1073R 2SD667AC 2SD669AC sot23-3 marking 63 2SD468C marking 2sd1664 8550SS 2SB647C
Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s d882 to-92 KL4 SOT-23 BR S8050 bq d882 S8050 equivalent transistor D882 datasheet PCR100-6
Text: 1500 40 25 5 8550S PNP ECB 625 500 40 25 5 8550SS PNP ECB 1000 1500 40 25 5 A1015


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PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s d882 to-92 KL4 SOT-23 BR S8050 bq d882 S8050 equivalent transistor D882 datasheet PCR100-6
Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: 5 8550SS PNP ECB 1000 1500 40 25 5 A1015 PNP ECB 400 150 50 50 5 A42 NPN EBC 625


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PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
2014 - diac kr 206

Abstract: SMBJ11CA BAS70WT B772 031 kvp 51a smb PL 15Z DIODE Zener Diode pev LF marking 812 6V8A 10A06 sources EX 0045 bm diode zener
Text: 6A4G 6A6 6A6G 6A8 6A8G 8050SS-C 8050SS-D 8550SS-C 8550SS-D AK10-058C AK10-066C AK10


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PDF element14 diac kr 206 SMBJ11CA BAS70WT B772 031 kvp 51a smb PL 15Z DIODE Zener Diode pev LF marking 812 6V8A 10A06 sources EX 0045 bm diode zener
2015 - secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM c945 p 331 transistor SMBJ11CA SM1150AM SM4005A pzt649 SMBJ13CA BAS70B
Text: No file text available


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PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM c945 p 331 transistor SMBJ11CA SM1150AM SM4005A pzt649 SMBJ13CA BAS70B
2015 - secos gmbh

Abstract: SMBJ11CA SM4005A BZV55C12 BZV55C6V2 SMBJ160CA SMBJ16CA SMBJ14CA SMBJ130CA SMBJ13CA
Text: No file text available


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PDF SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A BZV55C12 BZV55C6V2 SMBJ160CA SMBJ16CA SMBJ14CA SMBJ130CA SMBJ13CA
8550SST

Abstract: 8550SS k 1 transistor
Text: 8550SST -1.5A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G H Emitter Collector Base J CLASSIFICATION OF hFE (1) A Product-Rank 8550SST-B 8550SST-C Range 85~160 120~200 160~300 D 8550SST-D REF. B , individually. Page 1 of 2 8550SST Elektronische Bauelemente -1.5A , -40V PNP Plastic Encapsulated


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PDF 8550SST 8550SST-B 8550SST-C 8550SST-D -100mA -800mA -800mA, -80mA 8550SST 8550SS k 1 transistor
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