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Part Manufacturer Description Datasheet Download Buy Part
IXTT82N25P IXYS Corporation Power Field-Effect Transistor, 82A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
IXTK82N25P IXYS Corporation Power Field-Effect Transistor, 82A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
IXTQ82N25P IXYS Corporation Power Field-Effect Transistor, 82A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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IXTK82N25P IXYS Corporation TME Electronic Components 1 $12.96 $10.34
IXTQ82N25P IXYS Corporation Future Electronics - $4.75 $4.50
IXTT82N25P IXYS Corporation Future Electronics - $5.61 $5.27
IXTT82N25P IXYS Corporation TME Electronic Components 10 $15.58 $10.73

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82N25P Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - 82N25P

Abstract: No abstract text available
Text: IXTK 82N25P IXTQ 82N25P IXTT 82N25P PolarHTTM Power MOSFET VDSS ID25 = 250 V = 82 A , DS99121E(12/05) IXTK 82N25P IXTQ 82N25P IXTT 82N25P Symbol gfs Test Conditions Characteristic , 6,759,692 6,771,478 B2 IXTK 82N25P IXTQ 82N25P IXTT 82N25P Fig. 2. Exte nde d Output Characte , 50 75 100 TC - Degrees Centigrade 125 150 IXTK 82N25P IXTQ 82N25P IXTT 82N25P Fig , 1000 IXTK 82N25P IXTQ 82N25P IXTT 82N25P Fig . 13. M axim u m T r an s ie n t T h e r m al Re s


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PDF 82N25P 82N25P
2004 - 82N25P

Abstract: IXYS 82N25P 82n25
Text: IXTQ 82N25P IXTT 82N25P IXTK 82N25P PolarHTTM Power MOSFET VDSS ID25 = 250 V = 82 A , ) IXTK 82N25P IXTQ 82N25P IXTT 82N25P Symbol Test Conditions Characteristic Values (TJ = 25 , 6,683,344 IXTK 82N25P IXTQ 82N25P IXTT 82N25P Fig. 2. Extended Output Characteristics @ 25ºC , 25 50 75 100 TC - Degrees Centigrade 125 150 IXTK 82N25P IXTQ 82N25P IXTT 82N25P Fig. 8. Transconductance Fig. 7. Input Adm ittance 80 100 90 70 80 gfs - Siemens


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PDF 82N25P O-264 065B1 728B1 123B1 728B1 82N25P IXYS 82N25P 82n25
2004 - 82N25P

Abstract: IXYS 82N25P
Text: PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTQ 82N25P IXTT 82N25P IXTK 82N25P RDS(on) VDSS ID25 = 250 V = 82 A = 33 m TO-264 (IXTK) Symbol VDSS VDGR , . US patent is pending. DS99121A(1/04) © 2004 IXYS All rights reserved IXTK 82N25P IXTQ 82N25P IXTT 82N25P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min , ,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTK 82N25P IXTQ 82N25P IXTT 82N25P Fig. 1


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PDF 82N25P 82N25P O-264 O-264 O-268 IXYS 82N25P
2006 - 82N25P

Abstract: TO-264 Package 5 lead 82n25 C500W ixtq IXYS 82N25P Ixtq82n25p
Text: IXTK 82N25P IXTQ 82N25P IXTT 82N25P PolarHTTM Power MOSFET VDSS ID25 = 250 V = 82 A , DS99121E(12/05) IXTK 82N25P IXTQ 82N25P IXTT 82N25P Symbol gfs Test Conditions , ,478 B2 IXTK 82N25P IXTQ 82N25P IXTT 82N25P Fig. 2. Exte nde d Output Characte r is tics @ 25 ºC , Degrees Centigrade 125 150 IXTK 82N25P IXTQ 82N25P IXTT 82N25P Fig. 8. Transconductance Fig , conditions, and dimensions. 10 100 V DS - Volts 1000 IXTK 82N25P IXTQ 82N25P IXTT 82N25P


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PDF 82N25P 82N25P TO-264 Package 5 lead 82n25 C500W ixtq IXYS 82N25P Ixtq82n25p
2004 - DIODE 1334

Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P IXTP IXTP IXTP IXTP IXTP75N10P 36N30 200N10P-88
Text: PolarHTTM MOSFET, very low RDS(on) Type VDSS max. V IXTD 110N055P-5S IXTD 75N10P-5S IXTD 110N10P-6S IXTD 140N10P-7S IXTD 170N10P-8S IXTD 200N10P-88 IXTD 62N15P-5S IXTD 96N15P-6S IXTD 120N15P-7S IXTD 150N15P-8S IXTD 180N15P-88 IXTD 50N20P-5S IXTD 74N20P-6S IXTD 96N20P-7S IXTD 120N20P-8S IXTD 140N20P-88 IXTD 42N25P-5S IXTD 64N25P-6S IXTD 82N25P-7S IXTD 100N25P-8S IXTD 120N25P-88 IXTD 36N30P-5S IXTD 52N30P-6S IXTD , 140N20P IXTP 42N25P IXTQ 64N25P IXTQ 82N25P IXTQ 100N25P IXTK 120N25P IXTP 36N30P IXTQ 52N30P IXTQ 69N30P


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PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P IXTP IXTP IXTP IXTP IXTP75N10P 36N30
STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 IXFH30N60P ixfn100n50p IXFN48n60p ixys ixfn100n50p
Text: intrinsic body diode. IXT(1)42N25P IXT(1)64N25P IXT(1) 82N25P IXT(1)100N25P IXTK120N25P 250 250 , )42N25P IXT(1)64N25P IXT(1) 82N25P IXT(1)100N25P IXTK120N25P 250 250 250 250 250 42.0 64.0 , )42N25P IXT(1)64N25P IXT(1) 82N25P IXT(1)100N25P IXTK120N25P 250 250 250 250 250 42.0 64.0


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PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 IXFH30N60P ixfn100n50p IXFN48n60p ixys ixfn100n50p
2008 - IXTD08N100P-1A

Abstract: IXTQ22N60P DWS20-200A IXFH20N80P IXFK180N15P IXFH24N80P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Text: IXTQ 64N25P IXTQ 82N25P IXTQ 100N25P IXTK 120N25P IXTP 50N20P IXTQ 74N20P IXTQ 96N20P IXTQ


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2008 - 7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: 32P60P IXTK 40P50P IXTK 46N50L IXTK 82N25P IXTK 88N30P IXTK 90P20P IXTK 100N25P IXTK 102N30P IXTK


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PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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