The Datasheet Archive

808 nm 100 mw Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
808 nm 100 mw

Abstract: LC 45 degrees Connector
Text: WAVELENGTHS AND POWER OPTIONS 635 nm 1, 3, 5, 10, 15, 35 mW 650 nm 1, 5, 10 mW 660 nm 20, 30, 35, 50 mW 670 nm 1, 3, 5, 10 mW 685 nm 20, 50 mW 780 nm 5, 20 mW 785 nm 35, 50, 75, 90 mW 808 nm 100 mW 850 nm 1, 3, 5 mW Custom Please call for further , JST PHR4 4pin OPTICAL SPECIFICATIONS Diode Power 1 mW to 100 mW * Power Stability vs case Temp 0.005 % per °C Wavelength 635 nm to 850 nm Beam Size at Aperture * Beam


Original
PDF 100mW ISO9001 808 nm 100 mw LC 45 degrees Connector
2015 - smd diode UJ 64 A

Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Text: -100MGS, 808 nm , 100 mW , sm, 9 mm 96,00 105,77 RLT808-150GS, 808 nm , 150 mW , sm, 9 mm 474,78 523 , , 50 °C, 9 mm, without photodiode 196,00 215,96 LD-450-100SG, 450 nm , 100 mW , 70 °C, 3.8 mm , , 473 nm , 100 mW , 60 °C, 5.6 mm 5.990,00 6.599,90 LD-488-60MG, 488 nm , 60 mW , 60 °C, 5.6 mm , -520-50SG, 520 nm , 50 mW , 70 °C, 3.8 mm, without photodiode 110,00 121,20 NLD52100SG, 520 nm , 100 mW , nm , 100 mW , mm, 9 mm, without photodiode 154,00 169,68 RLT635-100GPD, 635 nm , 100 mW , mm, 9


Original
PDF RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
2008 - M9-808-0150-S50

Abstract: C2-808-0100-S50 808nm 100mw laser diode M9-808-0150-S5P
Text: Specifications 808 nm Single-Mode Laser Diodes Description: High brightness, high quality, and high reliability are the foundation of our single mode product line. Axcel's 808 nm single mode laser diodes are , reliable in the industry today. Our 808 nm single mode line serves a broad range of applications including , mW mA V mW hour deg, FWHM deg, FWHM mA W/A oC oC oC 100mW Series Min 803 110 100 ,000 13 0.9 -40 -20 Typ 808 0.5 100 130 1.9 17 8 30 1.0 25 80 50 250 Max 813 2 150 2.2 22 11 50 Min 803 160 100 ,000


Original
PDF ss-808-pppp-s50 M9-808-0150-S50 C2-808-0100-S50 808nm 100mw laser diode M9-808-0150-S5P
2010 - 808nm 100mw laser diode

Abstract: No abstract text available
Text: Product Specifications Features 808 nm Single-Mode Laser Diodes • Up to 150 mW CW output , 808 nm single mode laser diodes are available with up to 150 mW of continuous output power from a , lifetimes that make our chips among the most reliable in the industry today. Our 808 nm single mode line , Typical Max Wavelength nm 803 808 813 803 808 813 Spectrum FWHM nm - 0.5 2 - 0.5 2 Operating Power (Po) mW - 100 - - 150 - Operating


Original
PDF HW/axcel/sm/808nm-sm-laser-diode 808nm 100mw laser diode
JDSU CQF935 DFB

Abstract: CQF935 JDS uniphase CQF935 uniphase CQF935 Laser Diode 808 2 pin 1000 mw datasheets JDS uniphase CQF935 808 nm 1000 mw 2 pins GR-468-CORE 808 nm 1000 mw laser diode JDSU CQF935
Text: Product Bulletin 50 mW 1550 nm CW DFB Lasers with PM Fiber for WDM Applications CQF935/ 808 , Relative Intensity ( nm ) Output Power ( mW ) 80 70 60 50 40 30 CQF935/ 808 o Tchip=33.5 C 20 10 100 200 300 400 -10 Wavelength: 1555.75 nm o Po=50 mW Tchip=33.5 C -20 -30 , , both in range (1527.61 to 1610.06 nm ) and in channel definition, thus adhering to the 100 GHz grid , , built-in optical isolator · 1527 - 1610 nm wavelength range · 0.8 nm ( 100 GHz) spacing · 0.4 nm (50 GHz


Original
PDF CQF935/808 RWR-030-42-01083-WWM, JDSU CQF935 DFB CQF935 JDS uniphase CQF935 uniphase CQF935 Laser Diode 808 2 pin 1000 mw datasheets JDS uniphase CQF935 808 nm 1000 mw 2 pins GR-468-CORE 808 nm 1000 mw laser diode JDSU CQF935
Laser Diode 808 2 pin 1000 mw

Abstract: 808 nm 1000 mw laser diode CW laser diode 808 nm tunable lasers diode applications LD-808-500C-C LASER DISTANCE METER 808 nm 1000 mw Laser-Diode 808 Laser Diode 808 nm Laser Diode LD Catalog
Text: IR and infrared laser diodes with center wavelengths of 670, 808 , 980 and 1930 nm LASERS · , of single laser diode stripes emitting at center wavelengths of 670, 808 , 980 and 1930 nm and linear array bars emitting at 808 nm . The Aluminum-free laser diode material used in most of these , gradual degradation. Devices with CW power of 200 mW to 20 W are available in C-mount, TO-3 and high heat load (HHL) package styles, with free-space outputs. Several models with CW power of 100 and 200


Original
PDF
2004 - JDSU CQF935 DFB

Abstract: JDSU CQF935 JDS uniphase CQF935 uniphase CQF935 CQF935
Text: Product Bulletin 50 mW 1550 nm CW DFB Lasers with PM Fiber for WDM Applications CQF935/ 808 , Wavelength: 1555.75 nm o Po=50 mW Tchip=33.5 C 70 60 50 40 30 20 10 0 0 100 200 300 400 500 Operating , in range (1527.61 to 1610.06 nm ) and in channel definition, thus adhering to the 100 GHz grid (0.8 nm , Features · 1550 nm WDM distributed feedback laser diode · High power (> 50 mW ) · Polarization maintaining , range · 0.8 nm ( 100 GHz) spacing · 0.4 nm (50 GHz) spacing optional Applications · Hybrid fiber-coax


Original
PDF CQF935/808 JDSU CQF935 DFB JDSU CQF935 JDS uniphase CQF935 uniphase CQF935 CQF935
808nm 100mw laser diode

Abstract: Laser Diode 808 nm SLD-808-P200-05 laser diode 780 nm laser diode 808nm 808nm laser diode Laser Diode 808 300 mw diode laser 808nm 200mW 808 nm 100 mw 808nm
Text: : 886-3-475-4378 Units mW V E-mail : sales@uocnet.com Revise: 2006/03/01 SLD- 808 -P200-05 UNION , - mW /mA ±3 ±3 811 deg. deg. deg. deg. nm Typical characteristic curves Optical , Output Power ( mW ) Light power( mW ) 50oC 150 100 50 1.2 0.8 0.4 0 0 100 200 , OscillationWavelengthvs. Temperature characteristics Peak Wavelength( nm ) Oscillation wavelength( nm ) 100 10 15 , SLD- 808 -P200-05 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD- 808


Original
PDF SLD-808-P200-05 808nm 200mW 180mW 808nm 100mw laser diode Laser Diode 808 nm SLD-808-P200-05 laser diode 780 nm laser diode 808nm 808nm laser diode Laser Diode 808 300 mw diode laser 808nm 200mW 808 nm 100 mw
2002 - Not Available

Abstract: No abstract text available
Text: 808 /830 nm Broad Area Laser Diode Product Family Specification Sheet The M8xx series of Broad , available. 808 and 830 nm high power Broad Area Laser Diodes are suited to a number applications including , ; 830=830 nm TT: Submount Type CH=Chip; BM=B Mount; CM=C Mount; SM=Special Mount WWWW: Output Power in mW 0300 = 300 mW ; 5000 = 5000 mW UUU: Emission Aperture Size 050 = 50 µm; 100 = 100 µm , : info@lasercomponents.com 808 /830 nm Broad Area Laser Diode Product Family Specification Sheet Sub-mount Options


Original
PDF D-82140
MM-222-037-261-42UM

Abstract: No abstract text available
Text: the red and infrared wavelength range. S6430MG, 640 nm , 30 mW , sm, 50 °C, 5.6 mm, datasheet S66100MG, 660 nm , 100 mW , mm, 50 °C, 5.6 mm, datasheet S66150MG, 660 nm , 150 mW , mm, 50 °C, 5.6 mm, datasheet S808500MG, 808 nm , 500 mW , mm, 50 °C, 5.6 mm, datasheet S8081WG, 808 nm , 1 W, mm, 40 °C, 9 mm, datasheet S8350MG, 830 nm , 50 mW , mm, 50 °C, 5.6 mm, datasheet S83100MG, 830 nm , 100 mW , mm, 50 °C, 5.6 , , 50 °C, 5.6 mm, datasheet S85100MG, 850 nm , 100 mW , mm, 50 °C, 5.6 mm, datasheet S85300MG, 850 nm


Original
PDF S6430MG, S66100MG, S66150MG, S808500MG, S8081WG, S8350MG, S83100MG, S83300MG, S83500MG, S85100MG, MM-222-037-261-42UM
Laser Diode 808 300 mw

Abstract: No abstract text available
Text: SLD- 808 -P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD- 808 -P200-C-04 Specifications (1) Size : (2) Device: (3) Structure 500*300*100m Laser diode , -40+85 Unit mW V 3156 UNION OPTRONICS CORP. No, 156 Kao-Shy Road Yang-Mei, Tao-Yuan , /01 SLD- 808 -P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips Electrical and Optical , 190mW-63mW Slope Efficiency mW /mA 1 I190 mW-I63mW Beam Divergence Parallel // Po=200mW 12 deg


Original
PDF SLD-808-P200-C-04 808nm 886-3-485-268in Laser Diode 808 300 mw
808 nm 1000 mw

Abstract: C6802 SLD300 SLD323V 1000MW Laser Diode 808 nm
Text: 0.2 0.4 0.2 802 804 806 808 802 810 804 [ nm ] 1.0 808 810 , 806 [ nm ] 0.4 0.2 0.4 0.2 802 804 806 808 810 802 [ nm ] 804 , V *1 p PO1.0W 790 840 nm Imon PO1.0W VR10V 0.3 1.5 6.0 mA , // X, Y D PO1.0W PO1.0W PO1.0W *1 nm SLD323V-1 795±5 SLD323V-2 810±10 SLD323V-3 830±10 nm SLD323V-21 798±3 SLD323V-24 807±3 SLD323V


Original
PDF SLD323V SLD323VMOCVD 2SLD3002 M-248 J93207C19-PS TcTc25 VR10V 808 nm 1000 mw C6802 SLD300 SLD323V 1000MW Laser Diode 808 nm
808 nm 1000 mw laser diode

Abstract: C6802 SLD300 SLD323XT SLD323X
Text: 802 804 [ nm ] 1.0 808 810 808 810 1.0 Tth = 25°C Po = 800mW Tth = 25 , 806 808 810 802 [ nm ] 804 806 [ nm ] -5- SLD323XT Po1000mW 1.0 1.0 , Vop PO1.0W 2.1 3.0 V * p PO1.0W 790 840 nm Imon PO1.0W VR10V 0.3 1.5 6.0 mA 20 30 40 degree 4 9 17 degree ± 100 m ±3 , Tth25 * nm SLD323XT-1 795±5 SLD323XT-2 810±10 SLD323XT-3 830±10 nm


Original
PDF SLD323XT SLD323XTMOCVD 2SLD300 M-273 Tth25 LO-10) 65MAX 808 nm 1000 mw laser diode C6802 SLD300 SLD323XT SLD323X
2009 - jdsu optic switch

Abstract: 808 nm 100 mw 2445-G1 laser diode for free space communication TO56 package Laser Diode 808 nm 5w CW laser diode 808 nm 2400150 TO-56 package laser diode 2455-G1
Text: 1.00 ­ ­ ­ 1.2 808 (±2.5) 808 (±7) 2 ­ 1.15 ­ 45 ­ 100 x 1 ­ nm W/A % µm 10 33 , . Unit W nm nm W/A % µm ­ 1.00 ­ ­ ­ 0.95 ­ ­ ­ 2.0 808 (±2.5) 808 (±7) 2 ­ , 5.0 W nm ­ 0.90 ­ ­ ­ 808 (±3) 808 (±7) 2 1.05 45 100 x 1 ­ ­ ­ ­ nm W/A , wavelength and tolerance Po c ­ 1.00 ­ ­ ­ 0.6 808 (±2.5) 808 (±7) 2 ­ 1.15 ­ 45 ­ 100 , wavelength and tolerance Po c ­ 0.95 ­ ­ ­ 3.0 808 (±2.5) 808 (±7) 2 ­ 1.10 ­ 45 ­ 100


Original
PDF 498-JDSU 5378-JDSU 24XXDIODELASER jdsu optic switch 808 nm 100 mw 2445-G1 laser diode for free space communication TO56 package Laser Diode 808 nm 5w CW laser diode 808 nm 2400150 TO-56 package laser diode 2455-G1
1998 - SLD323XT

Abstract: 1000mW laser SLD300 SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3 808 nm 1000 mw laser diode
Text: Wavelength [ nm ] 806 808 810 Wavelength [ nm ] 1.0 1.0 Tth = 25°C Po = 800mW Tth = 25 , 0.2 0.6 0.4 0.2 802 804 806 808 810 802 Wavelength [ nm ] 804 806 808 Wavelength [ nm ] ­5­ 810 SLD323XT Temperature dependence of spectrum (Po = 1000mW , 1.0W 790 840 nm Monitor current Imon PO = 1.0W VR = 10V 0.3 1.5 6.0 mA 20 30 40 degree 4 9 17 degree ± 100 µm ±3 degree Perpendicular


Original
PDF SLD323XT SLD323XT SLD300 65MAX M-273 LO-10) 1000mW laser SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3 808 nm 1000 mw laser diode
2009 - to56

Abstract: No abstract text available
Text: 808 (±2.5) 808 (±7) 2 ­ 1.15 ­ 45 ­ 100 x 1 ­ 7 30 ­ 0.32 0.85 1.8 0.27 12 ­ 10 33 ­ 0.40 1.00 2.0 ­ ­ 30 2455-G1 1.2 W Min. Typ. Max. ­ ­ 808 (±3) 808 (±7) 2 1.15 45 100 x 1 7 30 ­ 0.32 1.35 1.9 0.27 , -A1.2 W Typ. Max. ­ 1.2 808 (±2.5) 808 (±7) 2 ­ 1.15 ­ 45 ­ 100 x 1 ­ 7 30 ­ 0.32 1.35 1.9 0.27 12 ­ 11 33 , 100 x 1 ­ 7 30 ­ 0.65 2.40 1.8 0.09 6 ­ 11 33 ­ 0.75 2.80 2.0 0.12 ­ 30 Unit W nm nm W/A % µm , 2495-Y- 5.0 W Typ. Max. ­ 808 (±3) 808 (±7) 2 1.05 45 100 x 1 8 30 ­ 0.90 5.80 1.9 0.06 5 ­ 5.0 Unit


Original
PDF 498-JDSU 5378-JDSU 24XXDIODELASER to56
2006 - Not Available

Abstract: No abstract text available
Text: classes available: 0.6 - 2.0 mW 2.0 - 5.0 mW 5.0 - 8.0 mW 8.0 - 10.0 mW >10 mW power supply: 1 x CR2 , page 69 NEW! HIGH POWER 4 WATT IR LASER DIODE MODULE RLDB808-4000-5, 808 nm , 4 W cw , LASER DIODE MODULE RLDH808-1200-5, 808 nm , 1.2 W cw, collimated and focusable beam Price: USD 353,00 , um, 0.75 mW at 0.3A pulse, 0.22 mW cw at 70 mA, 120°, M10x1 thread, datasheet MIRO39A6, 3.9 um, 0.65 mW at 0.3A pulse, 0.19 mW cw at 70 mA, 120°, M10x1 thread, datasheet homepage find these items


Original
PDF MIRO33A6, M10x1 MIRO39A6, KA-7301B, RLDH808-1200-5, 2006-September-18
2008 - Not Available

Abstract: No abstract text available
Text: 0.6 808 (±2.5) 808 (±7) 2 ­ 1.15 ­ 45 ­ 100 x 1 ­ 7 30 ­ 0.32 0.85 1.8 0.27 12 ­ 10 33 ­ 0.40 1.00 2.0 ­ ­ 30 2455-G1 1.2 W Min. Typ. Max. ­ ­ 1.2 808 (±2.5) 808 (±7) 2 ­ 1.15 ­ 45 ­ 100 x 1 ­ 7 30 ­ , Symbol Min. Po c ­ 2455-A1.2 W Typ. Max. ­ 1.2 808 (±2.5) 808 (±7) 2 ­ 1.15 ­ 45 ­ 100 x 1 ­ 7 30 ­ , (±2.5) 808 (±7) 2 ­ 1.10 ­ 45 ­ 100 x 1 ­ 7 30 ­ 0.65 2.40 1.8 0.09 6 ­ 11 33 ­ 0.75 2.80 2.0 0.12 ­ 30 , 3.0 808 (±2.5) 808 (±7) 2 ­ 1.10 ­ 45 ­ 100 x 1 ­ 7 30 ­ 0.65 3.40 1.9 0.09 6 ­ 11 33 ­ 0.75 3.90 2.1


Original
PDF 498-JDSU 5378-JDSU 24XXDIODELASER
2000 - 808 nm 1000 mw

Abstract: 1000mW laser diode SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Text: 0.4 0.2 0.6 0.4 0.2 802 804 806 808 810 802 Wavelength [ nm ] 806 808 810 Wavelength [ nm ] 1.0 1.0 Tc = 25°C Po = 800mW Tc = 25°C Po = 1000mW 0.8 , 0.2 802 804 806 808 810 802 Wavelength [ nm ] 804 806 808 Wavelength , p PO = 1.0W 790 840 nm Monitor current Imon PO = 1.0W VR = 10V 0.3 1.5 , . W. H. M. : Full Width at Half Maximum 1 Wavelength Selection Classification Type Wavelength ( nm


Original
PDF SLD323V SLD323V SLD300 structur00 M-248 LO-11) 808 nm 1000 mw 1000mW laser diode SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
2011 - Not Available

Abstract: No abstract text available
Text: Laser Diodes 808 nm High Brightness Laser Diode BLD-81-tt-20W-A4-C BLD , ▪▪ ▪▪ 808 nm wavelength 20 W, 30 W output power 200 μm, 400 μm detechable fiber 0.22 NA , 39 59 53 50 info@lasercomponents.fr www.lasercomponents.fr Laser Diodes 808 nm High , -81-tt-30W-A4-C CW-output power Po W 20 30 Center wavelength lc nm 808 Tolerance of l - nm , V 6 Current lmo mA <0.6 Output power Pa mW >2 Wavelength la nm


Original
PDF BLD-81-tt-20W-A4-C BLD-81-tt-30W-A4-C
1998 - 1090D

Abstract: 1000mW laser SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Text: 0.4 0.2 0.6 0.4 0.2 802 804 806 808 810 802 Wavelength [ nm ] 806 808 810 Wavelength [ nm ] 1.0 1.0 Tc = 25°C Po = 800mW Tc = 25°C Po = 1000mW 0.8 , 0.2 802 804 806 808 810 802 Wavelength [ nm ] 804 806 808 Wavelength , 790 840 nm Monitor current Imon PO = 1.0W VR = 10V 0.3 1.5 6.0 mA 20 , at Half Maximum 1 Wavelength Selection Classification Type Wavelength ( nm ) SLD323V-1 795 ±


Original
PDF SLD323V SLD323V SLD300 M-248 LO-11) 1090D 1000mW laser SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
2006 - 808 nm 1000 mw 2 pins

Abstract: 808 nm 1000 mw laser diode DIODE 809 CW laser diode 808 nm 2362-P1 2382-P1 jdsu 2380
Text: COMMERCIAL LASERS 0.5 to 4.0 W, 798 to 800/ 808 to 812 nm Diode Lasers 2300 Series Key Features , ­ ­ ­ ­ 2 0.9 30 100 x 1 1.2 800 (±3) 812 (±3) ­ ­ ­ ­ W nm nm nm W/A % , ­ ­ 6 25 10 10.0 ­ ­ ­ µA/ mW pF V V ITE ITE ­ ­ 3.5 1.4 ­ ­ ­ , of 100 %. b. Temperature coefficient of wavelength is approximately 0.27 to 0.3 nm /°C. c , 798 (±3) 808 (±3) ­ 0.7 ­ ­ ­ ­ 2 0.9 30 500 x 1 800 (±3) 812 (±3) ­ ­ ­ ­ nm


Original
PDF 2300DIODELASER 5378-JDSU 808 nm 1000 mw 2 pins 808 nm 1000 mw laser diode DIODE 809 CW laser diode 808 nm 2362-P1 2382-P1 jdsu 2380
Not Available

Abstract: No abstract text available
Text: power P°P 1.5 W Differential efficiency 808 850 940 980 nm nm nm nm Threshold current 808 850 940 980 nm nm nm nm Operating c u rre n t1 ) 808 850 940 980 nm nm nm nm nm 1.00 1.00 0.90 0.90 Ah 1.80 1.70 1.80 1.70 'o p W /A , avelength 1 Ordering Code SPL SPL SPL SPL 808 850 940 975 Q62702-P367 0 6 2 7 0 2 P I 728 Q 62702-P 1630 on request 2Y81 2Y85 2Y94 2Y98 nm nm nm nm *) O ther w avelengths in


OCR Scan
PDF T0-220
2001 - SLD300

Abstract: SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-3
Text: Wavelength [ nm ] 806 808 810 Wavelength [ nm ] 1.0 1.0 Tth = 25°C Po = 800mW Tth = 25 , 0.2 0.6 0.4 0.2 802 804 806 808 810 802 Wavelength [ nm ] 804 806 808 Wavelength [ nm ] ­5­ 810 SLD323XT Temperature dependence of spectrum (Po = 1000mW , Wavelength Vop PO = 1.0W 2.1 3.0 V p PO = 1.0W 790 840 nm Monitor current , degree ± 100 µm ±3 degree Perpendicular Radiation angle Parallel Position


Original
PDF SLD323XT SLD323XT SLD300 M-273 LO-10) 65MAX M-273 SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-3
2000 - 808 nm 1000 mw 2 pins

Abstract: Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw 2 Wavelength Laser Diode 808 nm 100 mw peltier cooler 1000mW laser 1000mW laser diode chip thermistor medical device Laser Diode 808 2000 mw
Text: Wavelength [ nm ] 806 808 810 Wavelength [ nm ] 1.0 1.0 Tth = 25°C Po = 800mW Tth = 25 , 0.2 0.6 0.4 0.2 802 804 806 808 810 802 Wavelength [ nm ] 804 806 808 Wavelength [ nm ] ­5­ 810 SLD323XT Temperature dependence of spectrum (Po = 1000mW , Wavelength Vop PO = 1.0W 2.1 3.0 V p PO = 1.0W 790 840 nm Monitor current , degree ± 100 µm ±3 degree Perpendicular Radiation angle Parallel Position


Original
PDF SLD323XT SLD323XT SLD300 65MAX M-273 LO-10) 808 nm 1000 mw 2 pins Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw 2 Wavelength Laser Diode 808 nm 100 mw peltier cooler 1000mW laser 1000mW laser diode chip thermistor medical device Laser Diode 808 2000 mw
Supplyframe Tracking Pixel