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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1360CS8#TR Linear Technology LT1360 - 50MHz, 800V/µs Op Amp; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1360CS8 Linear Technology LT1360 - 50MHz, 800V/µs Op Amp; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1360CS8#TRPBF Linear Technology LT1360 - 50MHz, 800V/µs Op Amp; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1360CS8#PBF Linear Technology LT1360 - 50MHz, 800V/µs Op Amp; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1362CN#PBF Linear Technology LT1362 - Dual and Quad 50MHz, 800V/µs Op Amps; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C
LT1360CN8#PBF Linear Technology LT1360 - 50MHz, 800V/µs Op Amp; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C

800v irf Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
800v irf

Abstract: IRFBE30L IRFBE30S 95507 irf 480
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS(on) = 3.0 G ID = 4.1A S Description Third Generation HEXFETs from International , V VDS = VGS, ID = 250µA S VDS = 100V, ID = 2.5A µA VDS = 800V , VGS = 0V VDS = 640V, VGS = 0V, TJ , Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMB LED ON WW 02, 2000 IN T HE AS S EMB LY LINE


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PDF IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L EIA-418. 800v irf IRFBE30L IRFBE30S 95507 irf 480
2004 - P-Channel MOSFET 800v

Abstract: 800v irf IRF P CHANNEL MOSFET 100v IRF P CHANNEL MOSFET ED marking code diode P Channel Power MOSFET IRF irf 480 P-Channel mosfet 400v IRL3103L IRFBE30S
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS(on) = 3.0 G ID = 4.1A S Description Third Generation HEXFETs from International , = 10V, ID = 2.5A V VDS = VGS, ID = 250µA S VDS = 100V, ID = 2.5A µA VDS = 800V , VGS = 0V VDS = , ) D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMB LED ON WW 02, 2000


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PDF IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L Dissi957) EIA-418. P-Channel MOSFET 800v 800v irf IRF P CHANNEL MOSFET 100v IRF P CHANNEL MOSFET ED marking code diode P Channel Power MOSFET IRF irf 480 P-Channel mosfet 400v IRL3103L IRFBE30S
Not Available

Abstract: No abstract text available
Text: d www.irf.com IRLML0030TRPbF 100 100 10 BOTTOM VGS 10.0V 8.00V 4.50V 3.50V , (Normalized) ID, Drain-to-Source Current (A) VGS 10.0V 8.00V 4.50V 3.50V 3.25V 3.00V 2.50V 2.25V , IRLML6246 U = IRLML6344 V = IRLML6346 W = IRF ML8244 X = IRLML2244 Y = IRLML2246 Z = IRF ML9244


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PDF 96278B IRLML0030TRPbF OT-23) AN-994.
2012 - IRLML6346

Abstract: IRLML6344 IRLML9303 IRFML9244 IRLML6244 IRLML0030TRPBF Diode SOT-23 marking JE irlml0030tr 4.5V TO 100V INPUT REGULATOR IRFML8244
Text: =1.6A di/dt = 100A/s d d 2 www.irf.com IRLML0030TRPbF 100 TOP VGS 10.0V 8.00V 4.50V 3.50V 3.25V 3.00V 2.50V 2.25V 100 TOP VGS 10.0V 8.00V 4.50V 3.50V 3.25V 3.00V 2.50V 2.25V ID , IRLML6344 V = IRLML6346 W = IRF ML8244 X = IRLML2244 Y = IRLML2246 Z = IRF ML9244 24 25 26 X Y Z WW


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PDF 96278B IRLML0030TRPbF OT-23) AN-994. IRLML6346 IRLML6344 IRLML9303 IRFML9244 IRLML6244 IRLML0030TRPBF Diode SOT-23 marking JE irlml0030tr 4.5V TO 100V INPUT REGULATOR IRFML8244
2002 - 500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
Text: Current Sensing Method 20A­30A/40V Schottky Rectifiers 100%­400% Current Amplification 6A/ 800V , FQP13N50 RHRD460/S 1V5KE440CA MB6S IRF /S/W840B P6KE400A Transistor S1J/K SSP/S , Transceiver USB1T11A S-Correction IRF /IRFS630B 9A/200V N-Channel Power MOSFET IRF /IRFS6408 18A , USB 1.1 Transceiver Power Management Functions Audio Power Amplification IRF /IRFS630B N-Channel 9A/200V Power MOSFET FAN7000 300mW Audio Amplifier (stereo) IRF /IRFS634B N-Channel


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PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
2007 - P-Channel MOSFET 800v

Abstract: No abstract text available
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS(on) = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from , = 800V , VGS = 0V VDS = 640V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 4.1A VDS = , Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMB LED ON WW 02, 2000 IN T HE AS S EMB LY LINE


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PDF IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L 08-Mar-07 P-Channel MOSFET 800v
2007 - P-Channel MOSFET 800v

Abstract: IRFBE30L IRFBE30S IRL3103L
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS(on) = 3.0 G ID = 4.1A S Description Third Generation HEXFETs from International , = 800V , VGS = 0V VDS = 640V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 4.1A VDS = , Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS S EMB LED ON WW 02, 2000 IN T HE AS S EMB LY LINE


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PDF IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L 12-Mar-07 P-Channel MOSFET 800v IRFBE30L IRFBE30S IRL3103L
9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60 MOSFET SMPS 2N60C str TV SMPS
Text: Best 800V ~ 900V Line-up Part No. General Device Name BVDSS (V) ID (A) VGS (V , 600V 3.0A 1.0A 650V 700V 800V 900V Drain-Source Breakdown Voltage (BVDSS) KEC-H , S2 C3 Q3 IRF BVDSS ID KHB9D5N20P/F D.Y Coil 630 200V 9.0A RDS (ON , Vout RDS Part Num. IRF BVDSS ID KHB8D8N25P/F 634 250V 8.8A 0.45 TO , Switching PFC Switch Part Num. IRF BVDSS ID Status Part Num. IRF BVDSS ID


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PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60 MOSFET SMPS 2N60C str TV SMPS
IRF 244 MOSFET

Abstract: FOR G-243 G-243 International Rectifier MOSFET 443 irfae52 LF 71A diode LF 71A
Text: Summary Part Number bvdss RDS(on) "d IRFAE50 800V 1.2 n 7.1A IRFAE52 800V 1.40 6.6A FEATURES: â , IRFAE5C IRF ' < 25 50 75 • 100 125 Tc. CASE


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PDF T-39-13 O-204AA G-245 IRFAE50, IRFAE52 G-246 IRF 244 MOSFET FOR G-243 G-243 International Rectifier MOSFET 443 LF 71A diode LF 71A
1997 - 10Kf6 diode

Abstract: ir2155 40w electronic ballast IR2155 equivalent T106-26 IR2151 DT 94-3 self oscillating Electronic ballast 40W 10KF6 ir2155 design tips transistor IRF 630 IR2111 APPLICATIONS
Text: 40W 91K 11DF4 1/2W IR2151 N Notes IRF 720 7 6 1µF 400V 22 0.1 µF 0.01 µF 600V + L2 IRF 720 5 22 40W PTC 10 1/2W 0.001µF 600v L3 *Polyproplylene , excess of 800V RMS for reliable starting of any lamp at low ambient temperatures. The circuit shows a , voltage for each lamp. Even with a Q of only 2, the RMS lamp striking voltage exceeds 800V - more than , 2N2222A 4 7 IRF 624 NOTE 1 Select value for 70 watt lamp power. 2 Polypropylene capacitor 3


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PDF AN-995A IR215X IR2151 IR2111 IRF820 1N4007 10DF6 250VAC T106-26 EE-30Z 10Kf6 diode ir2155 40w electronic ballast IR2155 equivalent T106-26 IR2151 DT 94-3 self oscillating Electronic ballast 40W 10KF6 ir2155 design tips transistor IRF 630 IR2111 APPLICATIONS
HEXFET III - A new Generation of Power MOSFETs

Abstract: irf 1490 1000V P-channel MOSFET AN-964D irfc9024 AN-966 IRFC9240 IRFC210 irfc130 transistor 9527
Text: same high reliability planar technology used for the IRF series of packaged HEXFETs. The same advanced , KELVIN IS = CURRENT SENSE Figure 11. HEX-2: 800V , 900V, & 1000V, N-Channel SK * SOURCE KELVIN IS = , -3: 200V & 250V, N- and P-Channel Figure 17. HEX-3: 400V, 500V, & 600V, N-Channel Figure 18. HEX-3: 800V , -4: 400V, 500V, & 600V, N-Channel Figure 25. HEX-4.5: 500V, N-Channel Figure 26. HEX-4: 800V , 900V, & , 500V, N-Channel Figure 31. HEX-5: 400V, 500V, & 600V, N-Channel Figure 32. HEX-5: 800V , 900V, &


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PDF AN-955. AN-986. AN-966. -250V AN-964D HEXFET III - A new Generation of Power MOSFETs irf 1490 1000V P-channel MOSFET AN-964D irfc9024 AN-966 IRFC9240 IRFC210 irfc130 transistor 9527
IRFC9130

Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 irfc9120 IRFC430 IRFC9230
Text: IRF series of packaged HEXFETs. The same advanced MOS processing techniques, silicon gate structure , « Figure 11. HEX-2. 800V , 900V, & 1000V, N-Channel -—WH ■W Figure 12. HEX-3: 60V, N- and , 18. HEX-3: 800V , 900V, & 1000V, N-Channel All dimensions shown in Inches/mm Die dimensions are from , Figure 2«. HEX-4.5: 500V, N-Channel Figure 2*. HEX-4: 800V , 900V, & 1000V, N-Channel Figure 27. HEX , , N-Channel Figure 32. HEX-5: 800V . 900V, & 1000V. N-Channel -m— —-I Figure 33. HEX-6: 200V, 400V &


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PDF AN-955. AN-986. 0-60V AN-964D IRFC9130 irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 irfc9120 IRFC430 IRFC9230
2014 - Not Available

Abstract: No abstract text available
Text: VR = 800V , Tj=150° C & 25°C Total capacitive charge QC VR QC   C (V )dV 0 Total , 1200 Figure 6. Typical reverse characteristics per leg, IR=f (VR), parameter: Tj 1) guaranteed by


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PDF IDW20G120C5B
2014 - D3012B5

Abstract: No abstract text available
Text: 55 / 111 - pF VR = 800V , Tj=150° C & 25°C Total capacitive charge QC VR QC  ï , per leg, IR=f (VR), parameter: Tj 1) guaranteed by design. 1400 Per leg 1200 1000 1


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PDF IDW30G120C5B D3012B5
2014 - Not Available

Abstract: No abstract text available
Text: 29 / 59 - pF VR = 800V , Tj=150°C & 25°C Total capacitive charge QC VR QC  ï , 600 800 VR [V] 1000 1200 Figure 6. Typical reverse characteristics per leg, IR=f (VR


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PDF IDW15G120C5B
C4106 transistor

Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c4106 transistor c3447 transistor d1061 D1060 d1061
Text: -220 and TO-22I1MF mounted on the hoard, 15 L 3 0 2 0 M 4 0 3 0 N 5 0 Switching regulators (VCE0= 800V , , I.J " irf * iii. SSL IWl SANY0:T0-126(T0-126, TO-225, S0T-32), T0-126LP, T0-126MLCS0T-82) SANYO


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PDF T0-220MF O-220 Ratings/Ta-25 T0-220) 2SB1267 2SD1903 D1235 2SB1268 2SD1904 C4106 transistor C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c4106 transistor c3447 transistor d1061 D1060 d1061
70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Text: POWER FET IRF -634 70400634 N-CHANNEL IRF -830 70400830 N-CHANNEL 70400966 N-CHANNEL BF-966S DUAL GATE VN-2222LL TO-92 INSULATOR ONLY ENHANCEMENT 70402222 IRF -230 70420230 IRF -240 7040240 Page 6 ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER , 2508 BRIDGE RECT. 70402508 800V , 25 AMP TUBE FLYBACK 70402873 2K PIV 250MA 1N4003


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PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
Text: No file text available


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PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
SMD MARKING code caa

Abstract: No abstract text available
Text: perature. SAFElR Series 10TTS08S L VT L , TSM < 1,15V @ 6.5A = 140A I VD D M = 800V RRM , . irf . com 233 Kansas St., El Segundo, California 90245 U S A Tel: (310) 322-3331 Fax: (310) 322-3332


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PDF 10TTS08S SMD MARKING code caa
IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 IRFC9140R AN964
Text: feature the same high reliability DMOS technology used for the IRF series of packaged HEXFETS. The same , ) 0.42 (0.017) 0.65 (0.026) 0.58 (0.023) 3.63 (0.143) 3.56 (0.140) HEX-2: 800V , 900V & 1000V , , n-channel 4.42 (0.174) ' 1.26 (0.050) 5.23 (0.206) 0.50 (0.020) SOURCE HEX-3: 800V , 900V & 1000V , (0.026) 5.64 (0.222) T 1.65 (0.065) 0.51 (0.020) 5.64 (0.222) HEX-4: 800V , 900V & 1000V, N-CHANNEL , (0.036) 6.50 (0.256) 7.32 (0.288) HEX-5: 800V , 900V & 1000V, N-CHANNEL d30 2.03 (0.080) 2.03 (0.080


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PDF QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 IRFC9140R AN964
GEC Alsthom HRC

Abstract: GEC Alsthom GSL1000 GSGB235 GEC HRC FUSE LINK GSGB fuse GSH2000 GSA150 GISMK Alsthom
Text: , apply the following conversion factors: For 800V rms multiply by 0.96 For 600V rms multiply by 0.92 For , lower values of applied voltage, apply the following conversion factors: For 800V rms multiply by 0.96 , references, characteristics feature alternate ratings. Values given at 800V rms To obtain values of Cut-off , 0-1 1-0 10 100 500 PROSPECTIVE CURRENT kA (RMS SYMMETRICAL) Values given at 800V rms To obtain , ~ LP Figure 14 _L fg" 33 l 7, irF H i- Hoh- j r-N-r-P- -A- 1 l l fh i * ) 1


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PDF 240Volt GSA20 IEF/415. GRS32/A SGM20 GRS63/A MGM50 GRS100/B MGM20 GEC Alsthom HRC GEC Alsthom GSL1000 GSGB235 GEC HRC FUSE LINK GSGB fuse GSH2000 GSA150 GISMK Alsthom
1994 - IRFIBC44LC

Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510
Text: FITs @ 90°C & 60% UCL 22 Total Qty 849 Generation 3, N-channel, 800V - 1000V Failures Modes , . Extrapolation is to VG = 12 volts for an " IRF " or "IRC" device and to VG = 6 volts for an "IRL" device , volts for an " IRF " or "IRC" device and to VG = 6 volts for an "IRL" device. *Failure Modes


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1998 - CD4016BEX

Abstract: MCT thyristor 1000v HARRIS CD4000 QML transistor 60n06 MCT thyristor 100v cdp68hc68 A23 D-pak cd4000 cmos logic series guide b60n06 CDP65C51 ordering harris
Text: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IRF TYPES . . . . . . . . . . . . . , . . . . . . RF1S TYPES (TO-262, TO-263 IRF TYPES) . . . . . . . . . . . . . . . . . . . . . . . . . , 300: 300V 90: 90V 350: 350V 110: 110V 470: 470V HG2 Types 600: 600V 145: 145V 800: 800V 230: 230V 1000 , information. 16 Ordering Nomenclature Guide IRF TYPES IR EQUIVALENT IR PART PACKAGE DESIGNATION: C: 5 , TYPES (TO-262, TO-263 IRF TYPES) RF1S EQUIVALENT IR PART TO-262, TO-263 Surface Mount Package (D2-PAK


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PDF BR-027 82CXXX CD4016BEX MCT thyristor 1000v HARRIS CD4000 QML transistor 60n06 MCT thyristor 100v cdp68hc68 A23 D-pak cd4000 cmos logic series guide b60n06 CDP65C51 ordering harris
2009 - power Diode 800V 12A

Abstract: D12E120 800A IDP12E120 IEC61249-2-21
Text: . Dynamic Characteristics Reverse recovery time ns t rr V R= 800V , IF=12A, diF/dt=800A/µs, Tj =25°C - 150 - V R= 800V , IF=12A, diF/dt=800A/µs, Tj =125°C - 215 - V R= 800V , IF=12A, diF/dt=800A/µs, Tj =150°C - 225 - Peak reverse current A I rrm V R= 800V , IF = 12 A, di F/dt=800A/µs, T j=25°C - 17 - V R= 800V , IF =12A, diF/dt=800A/µs, Tj=125°C - 20.9 - V R= 800V , IF =12A, diF/dt=800A/µs, Tj=150°C - 21.5 - Reverse recovery charge


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PDF IDP12E120 PG-TO220-2 IEC61249-2-21 D12E120 power Diode 800V 12A D12E120 800A IDP12E120 IEC61249-2-21
1999 - 2A109

Abstract: Q67040-S4388 IDP04E120 smd diode UM 2a
Text: Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R= 800V , IF=4A, di F/dt=750A/µs, Tj=25°C - 115 - V R= 800V , IF=4A, di F/dt=750A/µs, Tj=125°C - 180 - V R= 800V , IF=4A, di F/dt=750A/µs, Tj=150°C - 185 - Peak reverse current A I rrm V R= 800V , IF = 4 A, diF/dt=750A/µs, Tj=25°C - 7.15 - V R= 800V , IF =4A, diF /dt=750A/µs, T j=125°C - 8 - V R= 800V , IF =4A, diF /dt=750A/µs, T j=150°C - 8.1 -


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PDF IDP04E120 PG-TO220-2-2. Q67040-S4388 D04E120 2A109 Q67040-S4388 IDP04E120 smd diode UM 2a
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