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800GHz Datasheets Context Search

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750NR

Abstract: AD1000 1000nm ir avalanche photodiodes M025 PD1002 PD1032 10 gb laser diode Silicon apd
Text: approximately 800GHz. Such a large GB is required particularly in detection of very weak and very wideband , frequency 2GHz) • High gain-bandwidth product ( 800GHz ) • Low noise index in multiplication process


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PDF PD1002, PD1032 150ps) 800GHz) AD1000) 750NR AD1000 1000nm ir avalanche photodiodes M025 PD1002 PD1032 10 gb laser diode Silicon apd
FIM37200

Abstract: 100GBASE-LR4
Text: 100GE CFP Transceiver Description • CFP MSA Compliant • Data rate 103.125G (100GE) & 111.809G (OTU-4) • Hot-pluggable • +3.3V single power supply • Dimensions (L W H) 145 77 14 mm • RoHS compliant Specifications Part Number Application Data Rate, each lane Unit FIM37100 FIM37200 FIM37101 FIM37201 - 100GBASE-LR4 / OTU-4 100GBASE-ER4 / OTU-4 100GBASE-LR4 / OTU-4 100GBASE-ER4 / OTU-4 Gbps 25.78125 / 27.9525 Lane Wavelength ( 800GHz spacing


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PDF 100GE 100GE) FIM37100 FIM37200 FIM37101 FIM37201 100GBASE-LR4 100GBASE-ER4 FIM37200
2001 - TCM1210U

Abstract: TCM1210U-500-2P usb3.0 circuit diagram
Text: (1/2) Common Mode Filters(SMD) For USB3.0/DisplayPort Conformity to RoHS Directive TCM Series TCM1210U Type FEATURES · These are thin-film, wideband common mode filters that are compatible with high-speed differential signal interfaces such as USB3.0. · A wider bandwidth was achieved for differential transmission making it possible to reduce noise emission without affecting the high-speed differential signal. · The differential mode cut-off frequency is 8.00GHz or higher, making it optimal for


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PDF TCM1210U 00GHz TCM1210U-300-2P TCM1210U-500-2P Sdd21 TCM1210U-300 TCM1210U-500 TCM1210U-500-2P usb3.0 circuit diagram
2011 - TCM1210U-500-2P

Abstract: TCM1210U-500
Text: affecting the high-speed differential signal. · The differential mode cut-off frequency is 8.00GHz or higher


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PDF TCM1210U 2002/95/EC, TCM1210U TCM1210U-300-2P TCM1210U-500-2P Sdd21 TCM1210U-300 TCM1210U-500 TCM1210U-500-2P
Not Available

Abstract: No abstract text available
Text: 8.00GHz 5.50GHz 8.50GHz Low Temperature 0.53 0.79 0.90 61.50 62.80 1.8 max


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PDF JXWBLB-T-BP-7000-2000-11CSMF 00GHz 50GHz 5-7000-2000-11CSMF
APX378

Abstract: C116
Text: calculated cutoff frequencies in excess of 800GHz. A line of beam lead diodes is a va ilable for th o s e w h


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PDF APX378 94GHz 94GHz. APX378) APX378 C116
2001 - USB3.0

Abstract: TCM1210U-500-2P displayport 1.2 TCM1210U usb3.0 circuit diagram SDD21 smd transistor 2p data TCM1210U-120-2P
Text: (1/2) Common Mode Filters(SMD) For USB3.0/DisplayPort Conformity to RoHS Directive TCM Series TCM1210U Type FEATURES · These are thin-film, wideband common mode filters that are compatible with high-speed differential signal interfaces such as USB3.0. · A wider bandwidth was achieved for differential transmission making it possible to reduce noise emission without affecting the high-speed differential signal. · The differential mode cut-off frequency is 8.00GHz or higher, making it optimal for


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PDF TCM1210U 00GHz TCM1210U-120-2P TCM1210U-300-2P TCM1210U-500-2P Sdd21 TCM1210U-120 TCM1210U-300 TCM1210U-500 USB3.0 TCM1210U-500-2P displayport 1.2 usb3.0 circuit diagram smd transistor 2p data TCM1210U-120-2P
2004 - 1550nm photodiode 1.6 Ghz

Abstract: 1550nm photodiode 5 Ghz LX3055 InGaAs Photodiode 1550nm
Text: =7.50GHz 9 8 Vr=2V: BW= 8.00GHz 7 6 Vr=3V: BW=9.55GHz 5 Vr=5V: BW=9.95GHz 4 1 2


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PDF LX3055 1310nm 1550nm LX3055 1550nm photodiode 1.6 Ghz 1550nm photodiode 5 Ghz InGaAs Photodiode 1550nm
2004 - Microsemi LX3055

Abstract: photo diode 10 Gbps LX3055 1550nm photodiode 1.6 Ghz VCSEL 1550 nm 1 Gbps 1550nm VCSEL InGaAs Photodiode 1550nm PHOTO diode
Text: =7.50GHz 9 8 Vr=2V: BW= 8.00GHz 7 6 Vr=3V: BW=9.55GHz 5 Vr=5V: BW=9.95GHz 4 1 2


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PDF LX3055 1310nm 1550nm LX3055 Microsemi LX3055 photo diode 10 Gbps 1550nm photodiode 1.6 Ghz VCSEL 1550 nm 1 Gbps 1550nm VCSEL InGaAs Photodiode 1550nm PHOTO diode
"Schottky Barrier Diodes"

Abstract: dh38 dh379 DH378 DH385
Text: well as low series resistance and e xhibit ca lculated cu to ff frequencies in excess of 800GHz. The


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PDF DH378. DH385 40GHz 60GHz "Schottky Barrier Diodes" dh38 dh379 DH378 DH385
2008 - GN2003

Abstract: 10G APD ROSA sumitomo apd rosa 10G APD sumitomo apd 10G OSA SRD2441-LG3 sumitomo apd rosa 8 avalanche 1550nm photodiode 5 Ghz srd2441
Text: =+3.3V Transimpedance [dB ] 80 75 70 65 fc=8.30GHz/Zt=6060 fc= 8.00GHz /Zt=5926 60 M=6 55 M


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PDF SRD2441-LG3 HUW0726021-01B 10Gb/s -27dBm HUW0726021-01A GN2003 10G APD ROSA sumitomo apd rosa 10G APD sumitomo apd 10G OSA SRD2441-LG3 sumitomo apd rosa 8 avalanche 1550nm photodiode 5 Ghz srd2441
Not Available

Abstract: No abstract text available
Text: product ( 800GHz ) mesa structure, increasing the gain band w id th area • Low noise index in m


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PDF 150ps) 800GHz) AD1000)
2004 - InGaAs Photodiode 1550nm

Abstract: 1310 vcsel
Text: =7.50GHz Vr=2V: BW= 8.00GHz Vr=3V: BW=9.55GHz Vr=5V: BW=9.95GHz Relative S21 (dB) 11 10 9 8 7 6 5 4 3 0 1


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PDF LX3055 1310nm 1550nm LX3055 InGaAs Photodiode 1550nm 1310 vcsel
SCF1001L4

Abstract: 8029 l2 SCF1011L4LNGG01
Text: TS-S12D072D January, 2013 100Gb/s CFP Optical Transceiver Module SCF1001L4 Series (100GBASE-LR4, ITU-T OTU-4,1300nm 4-lane WDM, EA-DFB, PIN-PD) Features Æ 4-lane x 25.78Gb/s L-WDM Optical Interface Ü High quality and reliability optical sub-assemblies Ü 1300nm Cooled WDM EA-DFB Transmitter with optical MUX Ü High Sensitivity PIN-TIA with optical DEMUX Ü 1300nm band with 800GHz spacing LAN WDM grid up to 10km over a SMF Æ IEEE802.3ba Compliant Ü Ü CAUI(10x10G


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PDF TS-S12D072D 100Gb/s SCF1001L4 100GBASE-LR4, 1300nm 78Gb/s 800GHz IEEE802 8029 l2 SCF1011L4LNGG01
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