The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158CSW Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDSO16, 0.300 INCH, PLASTIC, SOP-16, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver
LT1158CN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver

8/mosfet 4800 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
4800 8pin mosfet

Abstract:
Text: : DIONICS Power MOSFET Photovoltaic Relays are State-of- the-Art solid state relays designed for numerous , continuous currents, depending upon the model number, from 1.0, up to 19.0 amps. All relays feature MOSFET , turn on the MOSFETs and cause the relay to conduct. The MOSFET outputs provide thermal stability , . (2)* 19.00 48.00 + 200 0.08 5000 150 No 6-Pin Package DC Wiring Config. (3 , 150 150 No 8-Pin SIP DIH-139 DC N/O SPST 19.00 48.00 + 200 0.10 5000 150


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PDF MIL-R-28750 DIH-1378 DIH-1380 DIH-126 DIH-127 DIH-128 DIH-129 DIH-136 DIH-149 DIH-169 4800 8pin mosfet AC-DC Controllers DIH-143 DIH-136 DIH-135 DIH-134 DIH-129 DIH-128 DIH-127 mosfet 4800 circuit
1262-33

Abstract:
Text: 3040 3040 3040 4800 4800 4800 4800 4800 6600 6600 6600 6600 6600 6600 6900 6900 6900 , IXYS unique Trench MOSFET technology to provide extremely low power dissipation with ultra-low Rds(on , >>> Power MOSFET Discretes RF Power MOSFETs IGBT Discretes IGBT Modules Ultra Fast Rectifiers Silicon , D R I V E R S MOSFET and IGBT Gate Drivers Half Bridge Gate Drivers PWM Controllers FUNCTIONAL , 3040 3040 3040 4800 4800 4800 4800 4800 6600 6600 6600 6600 6600 6600 6900 6900 6900


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PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTQ130N10T IXTH200N10T IXTA60N10T ixtp76n075 IXTP98N075T IXTA98N075T IXTP130N10T IXTP60N10T
2013 - SJ 76 A DIODE EMI

Abstract:
Text: DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features • Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6643TRPbF


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PDF IRF6643TRPbF SJ 76 A DIODE EMI
7F MARKING

Abstract:
Text: Information S N-Channel MOSFET APM 4800 P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e , APM4800 N-Channel Enhancement Mode MOSFET Features Pin Description SO-8 · 30V/8A , RDS(ON)=15m(typ.) @ VGS=10V RDS(ON)=22m(typ.) @ VGS=4.5V · S · · 2 7 D 3 6 D G Reliable and Rugged D S Low RDS(ON) 8 S Super High Dense Cell Design for , d lin g C o d e Tem p. R ange P ackage C ode APM 4800 K : APM 4800 XXXXX X X X X X - D a


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PDF APM4800 7F MARKING ANPEC APM4800 J-STD-020A
2013 - Not Available

Abstract:
Text: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features ï‚·ï€ Latest MOSFET silicon , ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques , make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier , Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute Maximum Ratings VGS ID @


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PDF IRF6641TRPbF
2013 - Not Available

Abstract:
Text: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features • Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute


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PDF IRF6641TRPbF
mosfet 4400

Abstract:
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFETTM Power MOSFETs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating , applications. This new class of Power MOSFET uses IXYS' HDMOS II process which im proves the ruggedness of the , high voltage diodes and is tailored to minimize power dissipation and stress in the MOSFET . HDMOS II , MOSFET . It also features enhancements to the MOSFET cell design which significantly improve dv/dt


OCR Scan
PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 20N60 mosfet 7n80 4500 MOS 4800 mosfet mosfet 4800 circuit
TO220 Semiconductor Packaging

Abstract:
Text: C o l l m e r Semiconductor MOS-FET , High Voltage Diodes N-Channel Silicon Power MOS-FET cF-I Series = Low RDS(ON) cF-III Series = Logic Level, High gfs cFAP-IIA = Reduced Turn Off Time cF-II Series = VGS ±30 V, Reduced Turn Off Time cFAP-III = Logic Level, High Avalanche Ruggedness cFAP-IIIBH = , 0.006 9000 1250 250 285 TO3P 2SK3216-01 FAP-IIIBH 100 45.0 80 — 0.026 4800 1140 186 240 TO220 2SK3217-01MR FAP-IIIBH 100 50.0 70 — 0.025 4800 1140 230 265 TO-220F15 2SK3218-01 FAP-IIIBH 150 35.0 80 — 0.048


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PDF 2SJ314-01L 2SJ314-01S ESJC30-08 CS57-04A CS54-08A CS52-12A CS52-14A CS56-24 TO220 Semiconductor Packaging MOSFET HIGH VOLTAGE mosfet 4800 2SK208 2SK2642-01MR 4800 mosfet
2007 - 27BSC

Abstract:
Text: TSM7401 20V N-Channel MOSFET w/ESD Protected SOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(m , " Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter , : C07 TSM7401 20V N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless , 140 200 tr - 210 250 td(off) - 3700 4800 - 2000 2600 Dynamic , independent of operating temperature. 2/6 nS Version: C07 TSM7401 20V N-Channel MOSFET w/ESD


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PDF TSM7401 TSM7401CS 27BSC mosfet 4800 TSM7401 TSM7401CSRL
Not Available

Abstract:
Text: TSM7401 20V N-Channel MOSFET w/ESD Protected SOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(m , € Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter , : C07 TSM7401 20V N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless , 140 200 tr - 210 250 td(off) - 3700 4800 - 2000 2600 Dynamic , MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output


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PDF TSM7401 TSM7401CS
2008 - 4800 N-channel mosfet

Abstract:
Text: TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on , TSSOP-8 3Kpcs / 13" Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless , N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter , 135 - td(on) - 140 200 tr - 210 250 td(off) - 3700 4800 , TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless


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PDF TSM6968SD TSM6968SDCA 4800 N-channel mosfet MOSFET TSSOP-8 dual n-channel esd protect mosfet mosfet 4800 4800 mosfet MOSFET TSSOP-8 TSM6968SD y parameter of mosfet
2007 - FULLY PROTECTED MOSFET

Abstract:
Text: TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on , TSSOP-8 3Kpcs / 13" Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless , N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter , 135 - td(on) - 140 200 tr - 210 250 td(off) - 3700 4800 , TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless


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PDF TSM6968SD TSM6968SDCA FULLY PROTECTED MOSFET MOSFET TSSOP-8 dual n-channel 4800 power mosfet mosfet 4800 4800 mosfet Dual N-Channel MOSFET TSM6968SD
Not Available

Abstract:
Text: TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on , TSSOP-8 3Kpcs / 13” Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless , N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter , 3700 4800 - 2000 2600 Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain , Version: E07 TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta


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PDF TSM6968SD TSM6968SDCA
2008 - diode D07-15

Abstract:
Text: TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on , -8 3Kpcs / 13" Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted , on FR4 Board, t 5 sec. 1/6 Version: D07 TSM6968D 20V Dual N-Channel MOSFET w/ESD , ) - 140 200 tr - 210 250 td(off) - 3700 4800 - 2000 2600 , N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted


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PDF TSM6968D TSM6968DCA diode D07-15 4800 N-channel mosfet mosfet 4800 4800 mosfet esd protect mosfet MOSFET TSSOP-8 dual n-channel TSM6968D MOSFET TSSOP-8 FULLY PROTECTED MOSFET Dual N-Channel MOSFET
2007 - 4800 power mosfet

Abstract:
Text: TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on , -8 3Kpcs / 13" Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted , FR4 Board, t 5 sec. 1/6 Version: B07 TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected , 140 200 tr - 210 250 td(off) - 3700 4800 - 2000 2600 Dynamic , independent of operating temperature. 2/6 nS Version: B07 TSM6968D 20V Dual N-Channel MOSFET w


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PDF TSM6968D TSM6968DCA 4800 power mosfet 4800 mosfet mosfet 4800 TSM6968D
2007 - Not Available

Abstract:
Text: TSM7311D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS (V) RDS(on)(m) 20 22 @ , Part No. TSM7311DCS RL Package SOP-8 Packing 2.5Kpcs / 13" Reel Dual N-Channel MOSFET , : A07 TSM7311D 20V Dual N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC , -200 250 4800 2600 Unit V V uA uA A m S V Total Gate Charge Gate-Source Charge Gate-Drain Charge , TSM7311D 20V Dual N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless


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PDF TSM7311D TSM7311DCS
2008 - Dual N-Channel MOSFET

Abstract:
Text: Preliminary TSM6970D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS , -8 3Kpcs / 13" Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted , /4 Version: Preliminary Preliminary TSM6970D 20V Dual N-Channel MOSFET w/ESD Protected , 140 200 tr - 210 250 td(off) - 3700 4800 - 2000 2600 Dynamic , N-Channel MOSFET w/ESD Protected TSSOP-8 Mechanical Drawing DIM A a B C D E e F L 3/4


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PDF TSM6970D TSM6970DCA Dual N-Channel MOSFET mosfet 4800 4800 mosfet MOSFET TSSOP-8 dual n-channel MOSFET TSSOP-8 4800 N-channel mosfet FULLY PROTECTED MOSFET n-channel mosfet transistor
2012 - Not Available

Abstract:
Text: AUIRF7732S2PbF AUIRF7732S2TR/TR1 DirectFET® Power MOSFET ‚ • Advanced Process Technology , AUIRF7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced , cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed , heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are


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PDF AUIRF7732S2PbF AUIRF7732S2TR/TR1 AUIRF7732S2
2012 - AUIRF

Abstract:
Text: ® Power MOSFET V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg 40V 5.5m 6.95m 55A 30nC S S D , L8 Description The AUIRF7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon , cooling to maximize thermal transfer in automotive power systems. This HEXFET ® Power MOSFET is designed , heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are


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PDF AUIRF7732S2PbF AUIRF7732S2TR/TR1 AUIRF7732S2 AUIRF
2010 - mosfet 4800

Abstract:
Text: TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected TDFN 3x3 Pin Definition: 1. Source 1 2 , N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit , 5 sec. 1/6 Version: B07 TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected Electrical , ) - 3700 4800 - 2000 2600 Dynamic b Total Gate Charge Gate-Source Charge , Version: B07 TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta


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PDF TSM7900D TSM7900DCQ mosfet 4800 Dual N-Channel MOSFET dual mosfet 3X3 package esd protect mosfet 4800 mosfet n-channel mosfet transistor tdFN PACKAGE thermal resistance TSM7900D
2004 - IRF6603

Abstract:
Text: PD - 94364E IRF6603 HEXFET® Power MOSFET VDSS Application Specific MOSFETs l Ideal , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Charge ­­­ 60 90 nC 2 Ã MOSFET symbol A D G S e TJ = 25°C, IF = 20A , Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET Special , MOSFET , but these conduction losses are only about one half of the total losses. The power loss


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PDF 94364E IRF6603 IRF6603 IRF6603TR1
2011 - Not Available

Abstract:
Text: PD - 96332B IRF9395MPbF IRF9395MTRPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical , MC Description The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon , Form Quantity Tape and Reel 4800 Tape and Reel 1000 Absolute Maximum Ratings Max , €“ ––– -1.2 V ––– ––– 43 62 65 93 ns nC A Conditions MOSFET , TAPE FEED DIRECTION NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as


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PDF 96332B IRF9395MPbF IRF9395MTRPbF
2007 - 4800 power mosfet

Abstract:
Text: TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected TDFN 3x3 PRODUCT SUMMARY VDS (V) RDS(on , MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit , Version: A07 TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected Electrical Specifications Parameter , 3700 4800 - 2000 2600 pF c Switching Turn-On Delay Time Turn-On Rise Time , TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless


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PDF TSM7900D TSM7900DCQ 4800 power mosfet TSM7900D
2014 - Not Available

Abstract:
Text: TSM090N08PQ56 75V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1 , total Br + Cl) and <1000ppm antimony compounds. N-Channel MOSFET Absolute Maximum Ratings (Tc , 62 o C/W C/W Version: A14 TSM090N08PQ56 75V N-Channel MOSFET Electrical , - Ciss - 4800 - Coss - 650 - Crss - 340 - td(on) - , N-Channel MOSFET Electrical Characteristics Curves Output Characteristics Gate Threshold Voltage


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PDF TSM090N08PQ56 PDFN56 TSM090N08PQ56 900ppm 1500ppm 1000ppm
2004 - 24v 12v 20A regulator

Abstract:
Text: PD - 94574B IRF6607 HEXFET® Power MOSFET l VDSS RDS(on) max Qg(typ.) l , Description The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Charge ­­­ 54 81 nC 2 Ã Conditions MOSFET symbol A V D showing the , Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET Special , MOSFET , but these conduction losses are only about one half of the total losses. The power loss


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PDF 94574B IRF6607 IRF6607 24v 12v 20A regulator IRF6607TR1
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