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Not Available

Abstract: No abstract text available
Text: 200 - 400 SYX U 280 - 560 280 ELECTRONICS ■7TL.4142 ÜD24Û5D 331 â


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PDF KSD1621 KSB1121 250mm2 4fl52
Not Available

Abstract: No abstract text available
Text: ELECTRONICS INC ■7TL4142 ÜD17D75 EEfl KM23C16100A AC CHARACTERISTICS CMOS MASK ROM (Ta =


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PDF KM23C1610QA 0D17073 16M-Bit 120ns 50/xA 36-pin, KM23C16100A QG17D7b KM23C16100A_ KM23C16100A)
5B2 rectifier

Abstract: No abstract text available
Text: ) L=51m H, Vdd=50V, Fta=25n , Starting T j =25”C 452 ELECTRONICS ■7TL.4142 DGEflBbb


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PDF SSH3N90 5B2 rectifier
U3055L

Abstract: logic level mosfet SSR3055L cc1k SSU3055L 824 mosfet diode 824
Text: ELECTRONICS ■7TL4142 002T3b2 GTS I SSR3055L/U3055L N-CHANNEL LOGIC LEVEL MOSFET SOURCE-DRAIN DIODE


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PDF SSR3055L/U3055L SSR3055U U3055L SSR3055L SSU3055L ssr3055l/u3055l logic level mosfet SSR3055L cc1k SSU3055L 824 mosfet diode 824
Not Available

Abstract: No abstract text available
Text: Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms 1 Eas- ~2 W a s2 7TL4142


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PDF IRLS520A lb414E 7TL4142 GG3T24B
Not Available

Abstract: No abstract text available
Text: Forward Voltage Drop ELECTRONICS (> j 7TL.4142 DOBSlflfl 44fl 82599 D im ensions in M ilim


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PDF IRLM220A OT-223
ssp7n60

Abstract: No abstract text available
Text: temperature 498 ELECTRONICS 7TL.4142 □ □ 2 04 1 2 . S b 3 ■N-CHANNEL POWER MOSFETS


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PDF SSP7N60/55 SSP7N60 SSP7N55 7Rb4142 ssp7n60
IC NE555

Abstract: Ne555 ic of ic ne555 NE555ID D004 power ic NE555 Application note NE555 APPLICATION NE555CN NE555 D004 ic
Text: Output GND SAMSUNG SEMICONDUCTOR 509 SAMSUNG SEM IC ON DU CTOR INC Tñ ·' ·· D E § 7TL.4142


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PDF NE555 NE555 NE555IN NE556 IC NE555 Ne555 ic of ic ne555 NE555ID D004 power ic NE555 Application note NE555 APPLICATION NE555CN D004 ic
Not Available

Abstract: No abstract text available
Text: Junction-to-Ambient - ELECTRONICS 7TL.4142 OCGTfibb 1S3 Max. Units 1.02 — 62.5 °C/W


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PDF SFP9640 -200V O-220 003b32fl 00M1N 7Tb4142 DD3h33D
Not Available

Abstract: No abstract text available
Text: Junction-to-Ambient - 62.5 When mounted on the minimum pad size recommended (PCB Mount). ELECTRONICS 7TL4142


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PDF SFW/I9610 -200V 100cC) 00400fiS 00400flb
Not Available

Abstract: No abstract text available
Text: SAMSUNG S E M I CO NDUC TO R INC OS DE J 7TL.4142 0D0bl20 7 - - KS54AHCT O f i f i KS74AHCT FEATURES · Function, pln-out, speed end drive compatibility with 54/74ALS logic family · Low power consumption characteristic of CMOS · High-Drive-Current outputs: I ol = 8 mA ® V ol. =0.5V · Inputs and outputs interface directly with TTL, NMOS and CMOS devices · Wide operating voltage range: 4.5V to S.5V · Characterized for operation over industrial and military temperature ranges: KS74AHCT: - 4 0 ° C to +85`>C .


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PDF 0D0bl20 KS54AHCT KS74AHCT 54/74ALS KS74AHCT: 300-mil 7Tb414S 90-XO 14-Pin
IRF 537

Abstract: SSS1N50A T0-220F
Text: , Duty Cycle < 2% © Essentially Independent of Operating Temperature 7TL.4142 00404T2 3T4 N-CHANNEL


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PDF SSS1N50A T0-220F 00404Rb IRF 537 SSS1N50A T0-220F
A30Z

Abstract: 3224B V256D ttl 74112
Text: change without notice. (C) 1996 Samsung Electronics Printed in Korea. Page : 1 ( KM416V256DJ ) 7TL4142 , Electronics Printed in Korea. Page : 10 ( KM416V256DJ ) ■7TL4142 00322m T57 ■This Material , ) ■7TL4142 003B2S7 314 ■This Material Copyrighted By Its Respective Manufacturer ELECTRONICS


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PDF 16V256DJ 256Kx16 KM416V256DJ Q0322bt. A30Z 3224B V256D ttl 74112
VGS-30V PCHANNEL

Abstract: No abstract text available
Text: bvdss £ = . I I.o2- 2 BVdss~Vdd BVn ID(t)\ \ Time VDS(t) 7TL4142 00400^0 m


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PDF SFW/I9620 -200V 7TL4142 VGS-30V PCHANNEL
Not Available

Abstract: No abstract text available
Text: tu re Derating Curve 276 ELECTRONICS 7TL.4142 O D í f i n o 2DQ


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PDF IRFZ44/40 IRFZ44 IRFZ40 7Tb4142
SSF9N80A

Abstract: No abstract text available
Text: ) s \ y y \ v — t, —» Time ■VDS(t) 7TL.4142 G040B7B 744 SSF9N80A N-CHANNEL POWER


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PDF SSF9N80A 004G273 003b333 003b33M D03b335 SSF9N80A
IRL520

Abstract: IRL521 521 MOSFET UJ 79a
Text: limited by junction temperature ELECTRONICS 877 7TL.4142 DDST+lti GTb IRL520/521 N-CHANNEL LOGIC


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PDF IRL520/521 O-220 O-220 IRL520 IRL521 7RL4142 -25CW 521 MOSFET UJ 79a
HMM-11520

Abstract: No abstract text available
Text: bDE D 7TL.4142 G 0 1 2 D 0 , ì TT3 « S M G K ; HMM


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PDF HMM-11520
SSF5N80A

Abstract: PU 4145 pj 89 diode
Text: €”- li i«c2 —————— 2 bvn«-vn BVn ID(t) ■VDS(t) Time 7TL.4142 004050b T7b SSF5N80A


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PDF SSF5N80A GG40207 B2739 003b333 003b33M D03b335 SSF5N80A PU 4145 pj 89 diode
IRF820

Abstract: No abstract text available
Text: Drain Current Vs. C ase Temperature 316 ELECTRONICS 7TL.4142 0 0 2 0 2 3 0 717


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PDF IRF820/821 O-220 IRF820 IRF821 IRF820
Not Available

Abstract: No abstract text available
Text: axim um S afe O perating Area 514 ELECTRONICS 7TL.4142 0 0 2 0 4 2 0 120 ■N-CHANNEL


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PDF SSP5N80/70 SSP5N80 SSP5N70
Not Available

Abstract: No abstract text available
Text: |js, Duty Cycle £2% Essentially Independent of Operating Temperature 7TL4142 OGBTSM4 in the


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PDF IRLS530A T0-220F 300nF 7Tb4142
KA7514

Abstract: EL25 KA7514A BR4 DIODE samsung smps circuit diagram
Text: notice. Page: 2 (K A 7514A D ) (C) 1996 Samsung Electronics Printed in Korea. 7TL4142 0032701


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PDF KA7514AD KA7514 500mA KA75141KA7514A KA7514A KA7514AD El-25 EE-25 EL25 BR4 DIODE samsung smps circuit diagram
Not Available

Abstract: No abstract text available
Text: Characteristics Maximum Sate Operating Area 139 ^^^^^ELECTRONICS ■7TL.4142 00Eflfc,7û 21Ã


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PDF IRFR9024/20 IRFU9024/20 IRFR9024/9Ã IRFR9024/U9024 FR9020/U9020 IRFU9024/902Ã IRFR9020/U9020
Not Available

Abstract: No abstract text available
Text: 7TL.4142 G O l ? ^ lb2


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PDF SMF-03340 F-03340 F-03300. F-03300
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