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TXC Corporation
7M-14.31818MAAJ-T CRYSTAL, 14.31818MHZ, 18PF, 3.2 X 2.5MM; Frequency Nom:14.31818MHz; Crystal Case:SMD, 3.2mm x 2.5mm; Frequency Stability + / -:30ppm; Load Capacitance:18pF; Frequency Tolerance + / -:30ppm; Product Range:7M Series; No. of Pins:4 RoHS Compliant: Yes 7M-14.31818MAAJ-T ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 (2) 7M-14.31818MAAJ-T Cut Tape 1,037 3,000 $0.053 $0.053 $0.053 $0.053 $0.053 More Info
7M-14.31818MAAJ-T TAPE & REEL - FULL 0 3,000 $0.602 $0.602 $0.602 $0.578 $0.445 More Info
element14 Asia-Pacific 7M-14.31818MAAJ-T Cut Tape 2,058 1 $1.53 $1.36 $1.12 $0.881 $0.881 More Info
Farnell element14 (2) 7M-14.31818MAAJ-T Cut Tape 2,058 5 - £0.709 £0.532 £0.42 £0.347 More Info
7M-14.31818MAAJ-T Reel 0 5 - £0.709 £0.532 £0.42 £0.347 More Info

7M-14.31818MAAJ-T datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
7M-14.31818MAAJ-T 7M-14.31818MAAJ-T ECAD Model TXC Crystals, Crystals and Oscillators, CRYSTAL 14.31818MHZ 18PF SMD Original PDF

7M-14.31818MAAJ-T Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
EIA 549 Class 130B transformer

Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell BO 680Y 1000 rpm dc motor 12v 100watt clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
Text: No file text available


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PDF 000pF 000pF 0201ZD103KAT2A 0201ZC103KAT2A 0201YC101KAT2A 0201YC271KAT2A 0201YC471KAT2A 02013A1R0CAT2A 02013A4R7CAT2A 02013A100JAT2A EIA 549 Class 130B transformer mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell BO 680Y 1000 rpm dc motor 12v 100watt clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
2001 - ST 24C256

Abstract: m24c256 eeprom 24c64 93c46 rotated at24C02d eeprom Cross Reference AT24c32d AT24C21 atmel 93c56 93C66 national semiconductor
Text: , A1 and A2. These pins have no internal connection.) 128 24C00 T - t / p 128 24LC00 T - t / p 1K 24AA01 T - t / p AT24C01-10-pt-v T CAT24WC01-pt-v T 1K 24C01B T - t / p PCA8581-p 1K 24LC01B T - t / p PCA8581C-p 1K 24C01C T - t / p AT24C01A-10-pt-v T CAT24WC01-pt-v T PCA8581-p 1K 24LC014 T - t / p AT24C01A-10-pt-v T CAT24WC01-pt-v T PCA8581C-p 1K 24LC21 T - t / p AT24C21-10-pt-v T PCB2421C-p 1K 24LC21A T - t / p 1K 24LCS21 T - t / p 1K 24LCS21A T - t / p 2K 24AA02 T - t / p AT24C02d-10-pt-v T CAT24WC02-pt-v T 2K 24C02B T


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PDF OT-23 24C00 24LC00 24AA01 AT24C01-10-pt-v CAT24WC01-p1-80-2290-061 DS21621A DS21621A* ST 24C256 m24c256 eeprom 24c64 93c46 rotated at24C02d eeprom Cross Reference AT24c32d AT24C21 atmel 93c56 93C66 national semiconductor
PDSP2110

Abstract: No abstract text available
Text: (For Yellow Only) 1 0.209 (5.31) — 1 1 t t t i 11 i n I i r n FEATURES • Eight 0.200â , . -40°C to +100°C Maximum Solder Temperature 0.063” below seating plane, t <5 s e c , US C1 C2 C3 C4 C5 F¡r 0.030 (0.76) Typ. R2 t R3 R4 0.01 (0.254) R5 i , intensity is meaaured at Ta = T j = 25°C. No time is allowed for the device to warm up prior to measurement , /2/3/4 2 -1 2 4 Character Set ROM Page 1 (D7 = 0) D O 0 1 0 t A C S II D 1


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PDF PDSP2110 PDSP2111 PDSP2112 PDSP2113 PDSP2114 PDSP2110/1/2/3/4 PDSP2110
Not Available

Abstract: No abstract text available
Text: TOSHIBA TMP47C231A/931A C M O S 4-BIT M I C R O C O N T R O L L E R TMP47C231 AN T h e 4 7 C 2 3 1 A is t h e h i g h s p e e d a n d h i g h p e r f o r m a n c e 4 - b i t s i n g l e c h i p m i c r o c o m p u t e r b a s e d o n t h e T L C S - 4 7 C M O S s e r ie s , r e m o t e c o n t r o l s i g n a l p r e p r o c e s s o r , A /D c o n v e rte r i n p u t f o r AFC s ig n a l o r key in p u t , c o n v e r t e r (P ulse W i d t h M o d u l a t i o n ) o u t p u t , a n


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PDF TMP47C231A/931A TMP47C231
1996 - 1501-12

Abstract: ac 1501-12 V53C664H
Text: 6 4 A H PKG. SPEED ( t RAC ) DEVICE K (SOJ) Description Pkg. K BLANK (0°C to , , Operating 160 150 140 mA t RC = tRC (min.) 2.0 mA RAS,CAS at VIH other inputs VSS , , RAS-Only Refresh 50 55 60 160 150 140 mA t RC = tRC (min.) 2 VDD Supply Current , 50 Symbol Parameter 55 60 Min. Max. Min. Max. Min. Max. Unit Notes 32 t DVWL2 tDS Data-In Set-Up Time 0 - 0 - 0 - ns 14 33 t WL1DX tDH Data-In Hold Time


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PDF V53C664H V53C664H 16-bit 1501-12 ac 1501-12
1997 - TT 2170

Abstract: DH 40 74LVT16244 HB56UW1672E-6A HB56UW1672E-7A
Text: Test Conditions Operating current* , * 2 I CC1 - 2350 - 1990 mA t RC = min , 2350 - 1990 mA t RC = min Standby current* I CC5 - 100 - 100 mA , 1900 mA t RC = min EDO page mode current*1, * 3 I CC7 - 2170 - 1900 mA t HPC = min Input leakage current I LI ­10 10 ­10 10 µA 0 V Vin 4.6 , Max Min Max Unit Random read or write cycle time t RC 104 - 124 - ns


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PDF HB56UW1672E 16777216-word 72-bit ADE-203-683A 64-Mbit HM5164405ATT) 16-bit 74LVT16244) TT 2170 DH 40 74LVT16244 HB56UW1672E-6A HB56UW1672E-7A
1997 - HM51W16400BLS-6

Abstract: HM51W16400BLS-7 HM51W16400BLS-8 HM51W16400BS-6 HM51W16400BS-7 HM51W16400BS-8 HM51W16400BTS-6 HM51W16400BTS-7 Hitachi DSA0015
Text: I CC1 - 80 - 70 - 65 mA t RC = min Standby current I CC2 - 2 , Unit Test Conditions I CC3 - 80 - 70 - 65 mA t RC = min I CC5 - , 70 - 65 mA t RC = min Fast page mode current *1, *3 I CC7 - 70 - 60 - 50 mA t PC = min Battery backup current (Standby by with CBR refresh) (L-version , : tRC = 31.3 µs t RAS 0.3 µs Self refresh mode current (L-version) I CC11 - 200 -


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PDF HM51W16400B 304-Word ADE-203-368A mW/252 mW/234 HM51W16400BS/BLS HM51W16400BLS-6 HM51W16400BLS-7 HM51W16400BLS-8 HM51W16400BS-6 HM51W16400BS-7 HM51W16400BS-8 HM51W16400BTS-6 HM51W16400BTS-7 Hitachi DSA0015
1996 - HM514405C

Abstract: HM514405CS-6 HM514405CS-7 HM514405CS-8 HM514405CTT-6 HM514405CTT-7 HM514405CTT-8
Text: HM514405C Series Timing Waveforms*24 Read Cycle t RC t RAS RAS tT t RP t CRP t RSH t CAS t CSH t RCD CAS t RAD t ASR Address t RAL t CAH t RAH t ASC Row Column t RCHA t CAL t RCS t OHR t RCHR t RCHC t OFR t CAC t AA t OFF1 Dout Dout t RAC t OFF2 t DZC t OAC t CDD t WEZ High-Z Din t WDD t ODD t DZO t OEP 12 t RCH t RRH WE OE t RDD t OH HM514405C Series Early Write Cycle t RC t RAS RAS t


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PDF HM514405C 576-word ADE-203-259A 300-mil 26-pin HM514405CS-6 HM514405CS-7 HM514405CS-8 HM514405CTT-6 HM514405CTT-7 HM514405CTT-8
1997 - HM51W17800J-5

Abstract: HM51W17800J-6 HM51W17800J-7 HM51W17800LJ-5 HM51W17800S-5 HM51W17800S-6 HM51W17800S-7 Hitachi DSA0015
Text: conditions Operating current* * I CC1 - 110 - 100 - 90 mA t RC = min Standby , t RC = min Standby current* I CC5 - 5 5 5 mA RAS = VIH CAS = VIL Dout = enable CAS-before-RAS refresh current I CC6 - 110 - 100 - 90 mA t RC = min Fast page mode current*1, *3 I CC7 - 100 - 90 85 mA t PC = min Battery backup , interface Dout = High-Z CBR refresh: tRC = 62.5 µs t RAS 0.3 µs Self refresh mode current (L-version


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PDF HM51W17800 152-word ADE-203-664C 28-pin ns/60 HM51W17800J-5 HM51W17800J-6 HM51W17800J-7 HM51W17800LJ-5 HM51W17800S-5 HM51W17800S-6 HM51W17800S-7 Hitachi DSA0015
S M T209

Abstract: bird sound door bell t449 t418 T328 T125 liang ji T474 T431 t469 T456
Text: PIEZO B. LEVEL HOLD MODE FOR SPEAKER M 6 6 / M 67 2 BATTERY T 1 2V - 3.6V + " IO u F Vss 3 Vda Outpul 1 , NO. M66/ T -01S M66/ T -02 M66/ T -03 M66/ T -04 M66/ T -05B M66/ T -06 M66/ T -08 M 66/ T -11 M66/ T -17 M 66/ T -18 M 66/Ï-30 M 66/ T -31 M66/ T -32A M66/ T -33 M66/ T -34 M66/ T -35 M66/ T -36 M66/ T -37 M66/ T -39A M66/ T -41 M66/ T -42 M66/ T -44 M66/ T -45 M66/ T -46 M66/ T -48 M66/ T -49 M66/ T -50 M 66/ T -51 M66/ T -52 M66/ T -54 M66/ T -56 M66/ T -58 M 66/ T -61 M66/ T -65 M66/ T -68 M66/ T -7I M66/ T -72 M66/ T -73 M66/ T -79 M66/ T -80 M66/ T -81 M66/ T -83 M66/ T -84 M66


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PDF M66/T-01S M66/T-02 M66/T-03 M66/T-04 M67/T-01 M67/T-01S M67/T-47 M67/T-77 67/T-115 M67/T-204 S M T209 bird sound door bell t449 t418 T328 T125 liang ji T474 T431 t469 T456
2003 - HM51W17800J-6

Abstract: HM51W17800J-7 HM51W17800LS-6 HM51W17800LS-7 HM51W17800S-6 HM51W17800S-7 HM51W17800TT-6
Text: 100 - 90 mA t RC = min Standby current I CC2 - 2 - 2 mA TTL , High-Z I CC3 - 100 - 90 mA t RC = min Standby current* I CC5 - 5 , - 100 - 90 mA t RC = min Fast page mode current*1, * 3 I CC7 - 90 - 85 mA t PC = min Battery backup current (Standby with CBR refresh) (L-version) I CC10 - 400 - 400 µA CMOS interface Dout = High-Z CBR refresh: tRC = 62.5 µs t RAS 0.3


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PDF HM51W17800 ADE-203-664E 152-word 28-pin ns/70 mW/324 HM51W17800J-6 HM51W17800J-7 HM51W17800LS-6 HM51W17800LS-7 HM51W17800S-6 HM51W17800S-7 HM51W17800TT-6
Hitachi DSA00776

Abstract: HM5164165AJ-5 HM5164165AJ-6 HM5164165AJ-7 HM5164165ALJ-5 HM5164165ALJ-6
Text: Read cycle (Output disabled) Notes: 1. H: High (inactive) L: Low (active) D: H or L 2. t WCS 0 ns Early write cycle t WCS < 0 ns Delayed write cycle 3. Mode is determined by the OR function of the , Max Min Max Unit Test conditions I CC1 - TBD - 140 - 120 mA t RC = min , High-Z ICC3 - TBD - 140 - 120 mA t RC = min Standby current* I CC5 - , current ICC6 - TBD - 150 - 130 mA t RC = min EDO page mode current*1, * 3 I


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PDF HM5164165A HM5165165A 4194304-word 16-bit ADE-203-453 304-word 16-bit. Hitachi DSA00776 HM5164165AJ-5 HM5164165AJ-6 HM5164165AJ-7 HM5164165ALJ-5 HM5164165ALJ-6
115M1

Abstract: D3V-016M-1 D3V-016M-2 D3V-016-2 11G22 11G21 115M3 D3V-015M-1 6G51 ot 112
Text: roller lever 8. Special Code T : High temperature (200°C and 155°C) 9. Mounting Hole Size , D3V-111-3 5- T - D3V-111M-1 5- T - D3V-111M-2 5- T - D3V-111M-3 5- T - D3V-112-1 5- T - D3V-112-2 5- T - D3V-112-3 5- T - D3V-112M-1 5- T - D3V-112M-2 5- T - D3V-112M-3 5- T - D3V-113-1 5- T - D3V-113-2 5- T - D3V-113-3 5- T - M D3V-113M-1 5- T - D3V-113M-2 5- T - D3V-113M-3 5- T - Internal D3V-114-1 5- T - D3V-114-2 5- T - D3V-114-3 5- T - M D3V-114M-1 5- T - D3V-114M-2 5- T


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PDF EN61058-1 UL1054 D3V-116M-1 D3V-66M-1 D3V-11G6M-1 D3V-016M-1 115M1 D3V-016M-2 D3V-016-2 11G22 11G21 115M3 D3V-015M-1 6G51 ot 112
TE 555-4

Abstract: No abstract text available
Text: /l 0© © ® © © o u Q N CD Cl O C7 Q N T T T T —1 —i T CO T T T —1 —i T CO T T T —1 —l T T T T T —1 —l T T T T T —1 —i T CO T T T CD —1 CL O C7 Q N i T z ^ o 50 - A WW — © £7 O . 7 O J *»r © n “0 T T Tl T © LO —i T T T T T —1 n “0 T T T


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PDF SD-5554 WRI77EN TE 555-4
1997 - Hitachi DSA00164

Abstract: No abstract text available
Text: disabled) Notes: 1. H: High (inactive) L: Low (active) D: H or L 2. t WCS 0 ns Early write cycle t , 170 - 150 mA t RC = min I CC2 - 2 - 2 mA TTL interface RAS, UCAS , Unit Test conditions I CC3 - 170 - 150 mA t RC = min I CC5 - 5 , t RC = min EDO page mode current*1, * 3 I CC7 - 165 - 145 mA t HPC = min , CMOS interface Dout = High-Z CBR refresh: tRC = 125 µs t RAS 0.3 µs Self refresh mode current


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PDF HM5118165I 1048576-word 16-bit ADE-203-754A 576-word 16-bit. 42-pin ns/70 Hitachi DSA00164
1997 - Hitachi DSA00164

Abstract: Nippon capacitors
Text: conditions Notes Operating current I CC1 - 944 - 864 - 784 mA t RC = min 1, 2 , High-Z RAS-only refresh current I CC3 - 944 - 864 - 784 mA t RC = min 2 , CAS-before-RAS refresh current I CC6 - 944 - 864 - 784 mA t RC = min Fast page mode current I CC7 - 864 - 784 - 744 mA t PC = min Input leakage current I LI ­10 , Min Max Unit Random read or write cycle time t RC 90 - 110 - 130 -


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PDF HB56A264EJ-5/6/7 152-word 64-bit ADE-203-740A HB56A264EJ 16-Mbit HM5117800) 16-bit 74ABT16244) Hitachi DSA00164 Nippon capacitors
2002 - M/76952

Abstract: No abstract text available
Text: AREA 8.3 +0.2 -0 RECOMMENDED P.C. BOARD LAYOUT (COMPONENT SIDE) M 34 ELCO P T , 8071 Variation Code Side View Pin Loading 3.0 13.45 003 25 T T T T T T T T T T T T T T T T T T T T T T T T T Long Tail T T T T T T T T T T T T T T T T T T T T T T T T T L2, 3 15.4 3.0 13.45 004 25 T M M M M M T Long Tail T M M M M M T T M M M M M T T M M M M M T T M M M M M T T M M M M M T T M M M M M T


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1997 - 5165165

Abstract: Nippon capacitors
Text: time -6A/-6AL 0 0 1 1 1 1 0 0 3C t RAC = 60 ns RAS access time -7A/-7AL 0 1 0 0 0 1 1 0 46 t RAC = 70 ns CAS access time -6A/-6AL 0 0 0 0 1 1 1 1 0F t CAC = 15 ns CAS access time -7A/-7AL 0 0 0 1 0 0 1 0 12 t CAC = 18 ns 11 Module configuration type 0 0 0 0 , mA t RC = min Standby current I CC2 - 8 - 8 mA TTL interface RAS, CAS =


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PDF HB56HW465DB-A 4196304-word 64-bit ADE-203-829A 64-Mbit HM5165165A/AL) 24C02) HB56HW465DB-A 5165165 Nippon capacitors
1997 - HB56UW264DB-6L

Abstract: 24C02 Hitachi DSA00200 HM51W17805 HB56UW264DB-7L HB56UW264DB-7 HB56UW264DB-6 HB56UW264DB-5L HB56UW264DB-5 Nippon capacitors
Text: (+) 8 Module i t erfac e signal lev els 0 n 0 0 0 0 0 0 1 01 LVTTL 9 RAS access time -5/-5L 0 0 1 1 0 0 1 0 32 t RAC = 50 ns -6/-6L 0 0 1 1 1 1 0 0 3C t RAC = 60 ns -7/-7L 0 1 0 0 0 1 1 0 46 t RAC = 70 ns 0 0 0 0 1 1 0 1 0D t CAC = 13 ns -6/-6L 0 0 0 0 1 1 1 1 0F t CAC = 15 ns -7/-7L 0 0 0 1


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PDF HB56UW264DB 64-bit, ADE-203-735C 16-Mbit HM51W17805) 24C02) 144-pin HB56UW264DB-6L 24C02 Hitachi DSA00200 HM51W17805 HB56UW264DB-7L HB56UW264DB-7 HB56UW264DB-6 HB56UW264DB-5L HB56UW264DB-5 Nippon capacitors
1997 - Nippon capacitors

Abstract: No abstract text available
Text: 1990 - 1720 mA t RC = min Standby current I CC2 - 82 - 82 mA TTL , 0.2 V Dout = High-Z I CC3 - 1990 - 1720 mA t RC = min Standby current* I , current I CC6 - 2620 - 2260 mA t RC = min Fast page mode current*1, * 3 I CC7 - 1540 - 1360 mA t PC = min Input leakage current I LI ­10 10 ­10 , 70 ns Parameter Symbol Min Max Min Max Unit Random read or write cycle time t


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PDF HB56AW3272E-A 33554432-word 72-bit ADE-203-830A 64-Mbit HM5164400A) 16-bit 74LVT16244) Nippon capacitors
1997 - Hitachi DSA00164

Abstract: No abstract text available
Text: Read cycle (Output disabled) Notes: 1. H: High (inactive) L: Low (active) D: H or L 2. t WCS 0 ns Early write cycle t WCS < 0 ns Delayed write cycle 3. Mode is determined by the OR function of the , CC1 - 200 - 170 - 150 mA t RC = min I CC2 - 2 - 2 - 2 mA , t RC = min Standby current* I CC5 - 5 5 5 RAS = VIH, UCAS, LCAS = VIL Dout = enable CAS-before-RAS refresh current I CC6 - 190 - 170 - 150 mA t RC = min


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PDF HM5118165 16-bit) ADE-203-636D 576-word 16-bit. 42-pin 50-pin ns/60 Hitachi DSA00164
2003 - HM5118165

Abstract: HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165LJ-5 HM5118165LJ-6 HM5118165LJ-7 HM5118165TT-5 HM5118165TT-6
Text: ) Notes: 1. H: High (inactive) L: Low (active) D: H or L 2. t WCS 0 ns Early write cycle t WCS < 0 ns , Test conditions I CC1 - 200 - 170 - 150 mA t RC = min I CC2 - 2 - , Min Max Min Max Min Max Unit Test conditions I CC3 - 200 - 170 - 150 mA t RC = , CAS-before-RAS refresh current I CC6 - 190 - 170 - 150 mA t RC = min EDO page mode current*1, * 3 I CC7 - 185 - 165 - 145 mA t HPC = min RAS-only refresh current* 2


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PDF HM5118165 16-bit) ADE-203-636D 576-word 16-bit. 42-pin 50-pin ns/60 HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165LJ-5 HM5118165LJ-6 HM5118165LJ-7 HM5118165TT-5 HM5118165TT-6
1997 - HM51W17805BJ-6

Abstract: HM51W17805BJ-7 HM51W17805BJ-8 HM51W17805BLJ-6 HM51W17805BLJ-7 HM51W17805BLJ-8 HM51W17805BS-6 HM51W17805BS-7 Hitachi DSA0015
Text: Operating current I CC1 - 120 - 110 - 100 mA t RC = min Standby current I CC2 , High-Z RAS-only refresh current*2 I CC3 - 120 - 110 - 100 mA t RC = min I CC5 , t RC = min I CC7 - 120 - 110 - 100 mA t HPC = min Battery backup current , Dout = High-Z CBR refresh: tRC = 62.5 µs t RAS 0.3 µs Self refresh mode current (L-version) I , Max Unit Notes Random read or write cycle time t RC 104 - 124 - 144 -


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PDF HM51W17805B 152-word ADE-203-462B 28-pin ns/70 HM51W17805BJ-6 HM51W17805BJ-7 HM51W17805BJ-8 HM51W17805BLJ-6 HM51W17805BLJ-7 HM51W17805BLJ-8 HM51W17805BS-6 HM51W17805BS-7 Hitachi DSA0015
2001 - 17805

Abstract: ct rac 70 HM51W17805 HM51W17805J-5 HM51W17805J-6 HM51W17805LS-6
Text: Test conditions Operating current I CC1 - 110 - 100 - 90 mA t RC = min , - 90 mA t RC = min I CC5 - 5 5 5 mA RAS = VIH, CAS = VIL Dout = enable CAS-before-RAS refresh current I CC6 - 110 - 100 - 90 mA t RC = min EDO page mode current*1, *3 I CC7 - 100 - 90 85 mA t HPC = min Battery , CMOS interface Dout = High-Z CBR refresh: t RC = 62.5 µs t RAS 0.3 µs Self refresh mode current


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PDF E0155H10 ADE-203-631D HM51W17805 HM51W 152-w 28-pin ns/60 17805 ct rac 70 HM51W17805J-5 HM51W17805J-6 HM51W17805LS-6
2001 - Not Available

Abstract: No abstract text available
Text: conditions I CC1 — 110 — 100 — 90 mA t RC = min I CC2 — 2 — 2 , — 90 mA t RC = min I CC5 — 5 5 5 mA RAS = VIH CAS = VIL Dout = enable CAS-before-RAS refresh current I CC6 — 110 — 90 mA t RC = min EDO page mode current* 1, * 3 I CC7 — 85 mA t HPC = min Battery backup current* 4 , refresh: t RC = 62.5 µs t RAS ≤ 0.3 µs CMOS interface RAS, CAS ≤ 0.2V Dout = High-Z ct


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PDF E0156H10 ADE-203-630D HM5117805 152-w 28-pin ns/60
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