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OCETGCJ-NF-77.764MHZ Raltron Electronics Corporation Chip One Exchange 889 - -

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2002 - 1200w high frequency transformer

Abstract: planar transformer L40A NE3210 zr38600 SE3213-001 High power planar Transformer delta transformer NE321
Text: RATIO OPERATING L(X-Y) SE3213-001 7.64mH 25% 147.5uH 25% 147.5uH 25% FREQUENCY 350KHz (2-3


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PDF 32x21x13 100KHz -40oC 130oC. 1800Vrms. SE3213-001 350KHz 3000Vdc 1500Vdc 1200w high frequency transformer planar transformer L40A NE3210 zr38600 High power planar Transformer delta transformer NE321
341V

Abstract: RA45H7687M1 22an VGG13
Text: Recommendation of the output power control for RA45H7687M1 AN-900-026-A CONTOUR MAP @ 764MHz NOTE: Pout


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PDF AN-900-026-A RA45H7687M1 RA45H7687M1, RA45H7687M1 806MHz 20dBm 341V 22an VGG13
2001 - Not Available

Abstract: No abstract text available
Text: 2483.5MHz] [DC to 746MHz] [746 to 764MHz ] [776 to 794MHz] [824 to 849MHz] [869 to 894MHz] [894 to


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PDF DEA202441BT-2106A2 110GHz 170GHz 800GHz 960GHz 200GHz 4505GHz 400GHz 450GHz 484GHz
DEA202450BT-1261A2

Abstract: DEA202450BT-2038A1 DEA202450BT-1213C1 DEA202450BT-1283A2 DEA202441BT-2106A2 DEA202450BT-1275A1 DEA202450BT-3201B2 3717d
Text: 2483.5MHz] [DC to 746MHz] [746 to 764MHz ] [776 to 794MHz] [824 to 849MHz] [869 to 894MHz] [894 to


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PDF DEA202450BT-1261A2 DEA202441BT-2106A2 DEA202450BT-3201B2 DEA202450BT-1213C1 DEA202450BT-1275A1 DEA202450BT-2038A1 DEA202450BT-1283A2 2002/95/EC, 1600MHz 3200MHz DEA202450BT-1261A2 DEA202450BT-2038A1 DEA202450BT-1213C1 DEA202450BT-1283A2 DEA202441BT-2106A2 DEA202450BT-1275A1 DEA202450BT-3201B2 3717d
2010 - RA20H8087M

Abstract: RA20H8087M-101
Text: 40 16 30 12 IDD 20 8 f= 764MHz , VDD=12.5V, VGG=5V 10 0 4 0 -15 -10 -5 , VDD(V) DRAIN CURRENT IDD(A) 60 14 OUTPUT POWER P out(W) 16 f= 764MHz , VGG=5V, Pin , VOLTAGE VGG(V) OUTPUT POWER P out(W) 12 f= 764MHz , VDD=12.5V, Pin=50mW DRAIN CURRENT I DD(A


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PDF RA20H8087M 806-870MHz RA20H8087M 20-watt 870-MHz RA20H8087M-101
2005 - TB204

Abstract: LP802
Text: 50mW <-60 100mW 200mW 5th <-60 -55 <-60 PEP 100mW 400mW F1= 764MHz Pin 1tone 0.8mW


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PDF TB204 LP802 470MHz 476MHz 100mW 198mW 400mW LP802
mitsubishi rf

Abstract: RA45H7687M1 sirf 1v GG13
Text: power control for RA45H7687M1 - AN-900-026 CONTOUR MAP @ 764MHz NOTE: Pout less than 20dBm is not


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PDF AN-900-026 RA45H7687M1 RA45H7687M1, RA45H7687M1 20dBm AN-900-026 806MHz mitsubishi rf sirf 1v GG13
2011 - Not Available

Abstract: No abstract text available
Text: ) DRAIN CURRENT I DD (A) POWER GAIN Gp (dB) 50 Gp 20 16 12 f= 764MHz V DD=12.8V V GG1=3.4V V GG2 , Pout (W) 90 80 70 60 50 40 30 20 10 0 2 4 6 8 10 12 14 16 DRAIN VOLTAGE V DD (V) I DD f= 764MHz V , Pout (W) (dBm) 60 50 40 30 20 I DD f= 764MHz V DD=12.8V V GG1=3.4V Pin=50m W 60 50 40 30 I DD , 2 3 4 5 GATE VOLTAGE V GG2 (V) Pout (W) Pout (dBm ) 60 50 40 30 20 10 Pout (W) f= 764MHz V DD


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PDF RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz Oct2011
2009 - RA20H8087M

Abstract: RF MOSFET MODULE RA20H8087M-101 F8068
Text: 24 Pout 50 20 Gp 40 16 30 12 IDD 20 8 f= 764MHz , VDD=12.5V, VGG , 14 OUTPUT POWER P out(W) 16 f= 764MHz , VGG=5V, Pin=50mW 70 DRAIN CURRENT IDD(A , OUTPUT POWER P out(W) 12 f= 764MHz , VDD=12.5V, Pin=50mW DRAIN CURRENT I DD(A) OUTPUT POWER P


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PDF RA20H8087M 806-870MHz RA20H8087M 20-watt 870-MHz RF MOSFET MODULE RA20H8087M-101 F8068
2011 - ta1294

Abstract: No abstract text available
Text: 738 ~ 764MHz 820 ~ 846MHz 990 ~ 1010MHz 1072 ~ 1092MHz 1128 ~ 1804MHz 1804 ~ 1856MHz 1856 ~ 3000MHz dB


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PDF MP03642 10dBm 928MHz) 702MHz 764MHz 846MHz 1010MHz ta1294
DEA252450BT-2109C3

Abstract: 5104db DEA252450BT-2063C1 DEA252450BT-2037C1 DEA252450BT-2031A1 DEA252450BT-2027A1 DEA252450BT-2024D4 DEA252450BT-2024C5 DEA252450BT-2024C2 DEA252400BT-2030A1
Text: 764MHz ] [776 to 794MHz] [824 to 849MHz] [869 to 880MHz] [880 to 915MHz] [925 to 960MHz] [1570 to


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PDF DEA252450BT-2080B2 DEA252450BT-2024C2 DEA252450BT-2024C5 DEA252400BT-2030A1 DEA252450BT-2024D4 DEA252450BT-2027A1 DEA252450BT-2031A1 DEA252450BT-2063C1 DEA252450BT-2109C3 DEA252450BT-2037C1 DEA252450BT-2109C3 5104db DEA252450BT-2063C1 DEA252450BT-2037C1 DEA252450BT-2031A1 DEA252450BT-2027A1 DEA252450BT-2024D4 DEA252450BT-2024C5 DEA252450BT-2024C2 DEA252400BT-2030A1
RA45H7687M1

Abstract: RA45H8994M1 PIN3D mitsubishi Lot No
Text: .: 764MHz -20 30 Gain 20 0 -10 Ph. Freq.: 785MHz -20 VGG2=5V VGG2=5V -30 , ] 40 Gain 20 10 0 -10 Ph. Freq.: 764MHz -20 30 Gain 20 No.1 No.2 No.3 No , .1 No.2 No.3 No.1 No.2 No.3 10 Gain 20 10 0 -10 Freq.: 764MHz -20 Gain 20 , Freq.: 764MHz 0 -10 No.1 No.1 No.2 No.3 -20 No.2 No.3 -30 Lot No: 06XXA -40


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PDF AN-900-027-A RA45H8994M1 RA45H7687M1 RA45H8994M1/7687M1 50ohm, 06XXA 835MHz RA45H7687M1 PIN3D mitsubishi Lot No
2003 - RA20H8087M

Abstract: RA20H8087M-01 RA20H8087M-E01
Text: DRAIN CURRENT versus INPUT POWER 20 Gp 40 16 30 12 IDD 20 8 f= 764MHz , VDD , VOLTAGE VDD (V) DRAIN CURRENT I DD(A) 60 14 OUTPUT POWER P out(W) 16 f= 764MHz , V GG , 4 4.5 5 GATE VOLTAGE VGG(V) 0 5.5 60 OUTPUT POWER Pout(W) 12 f= 764MHz , V DD


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PDF RA20H8087M 851-870MHz RA20H8087M 20-watt 870-MHz becom-2-2833-9793 RA20H8087M-01 RA20H8087M-E01
3717d

Abstract: DEA202450BT-1283A2 DEA202450BT DEA202450BT-1261A2 092dB DEA202450BT-2038A1
Text: ] [2400 to 2483.5MHz] [2400 to 2483.5MHz] [2400 to 2483.5MHz] [DC to 746MHz] [746 to 764MHz ] [776 to


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PDF DEA202450BT-1261A2 DEA202441BT-2106A2 DEA202450BT-3201B2 DEA202450BT-1213C1 DEA202450BT-1275A1 DEA202450BT-2038A1 DEA202450BT-1283A2 2002/95/EC, 2400MHz 2450MHz 3717d DEA202450BT-1283A2 DEA202450BT DEA202450BT-1261A2 092dB DEA202450BT-2038A1
2006 - RA20H8087M

Abstract: RA20H8087M-101 20W power transistor
Text: 8 f= 764MHz , VDD=12.5V, VGG=5V 10 0 4 -5 0 5 10 15 30 12 20 16 , VDD(V) DRAIN CURRENT IDD(A) 60 14 OUTPUT POWER P out(W) 16 f= 764MHz , VGG=5V, Pin , 4.5 5 GATE VOLTAGE VGG(V) 5.5 OUTPUT POWER P out(W) 12 f= 764MHz , VDD=12.5V, Pin


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PDF RA20H8087M 806-870MHz RA20H8087M 20-watt 870-MHz RA20H8087M-101 20W power transistor
2004 - RA20H8087M

Abstract: RA20H8087M-01 20W power transistor
Text: IDD 20 8 f= 764MHz , VDD=12.5V, VGG=5V 10 0 4 -5 0 5 10 15 30 12 , VDD(V) DRAIN CURRENT I DD(A) 60 14 OUTPUT POWER P out(W) 16 f= 764MHz , VGG=5V, Pin , GATE VOLTAGE VGG(V) 5.5 60 OUTPUT POWER Pout(W) 12 f= 764MHz , VDD=12.5V, Pin=50mW DRAIN


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PDF RA20H8087M 851-870MHz RA20H8087M 20-watt 870-MHz RA20H8087M-01 20W power transistor
2008 - transistor j326

Abstract: PD84010-E a05t DB-84010-860 EXCELDRC35C GRM42-6 102J EEVHB1V100P
Text: ] Output Power [dBm] 38 37 36 35 34 45 40 35 764MHz 810MHz 860MHz 764MHz 33 810MHz , 38 45 40 37 35 764MHz 810MHz 860MHz 36 35 764MHz 810MHz 860MHz 30 34


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PDF DB-84010-860 PD84010-E DB-84010-860 transistor j326 a05t EXCELDRC35C GRM42-6 102J EEVHB1V100P
2011 - Not Available

Abstract: No abstract text available
Text: 60 20 50 20 OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 70 15 18 f= 764MHz , CURRENT I DD (A) I DD 10 8 f= 764MHz V DD=12.8V V GG1=3.4V V GG2=5V 20 18 f=870MHz V , =50, unless otherwise specified) 12 10 Pout (dBm ) 40 8 30 6 Pout (W) 10 4 f= 764MHz , 10 10 Pout (dBm ) GATE VOLTAGE V GG2 (V) 60 40 5 12 f= 764MHz V DD=12.8V V GG1


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PDF RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz
2007 - TB203

Abstract: LP801
Text: : 626MHz Pout 1tone Pout 2tones 3rd 25mW 50mW 100mW 183mW F1: 764MHz Pin 1tone 1.2mW 4.9mW F2 , 400mW F1: 764MHz Pin 1tone 0.9mW 3.6mW F2: 770MHz Pout 1tone Pout 2tones 3rd 25mW 50mW , 50mW <-60 100mW 195mW 5th <-60 -55 <-60 PEP 100mW 400mW F1: 764MHz Pin 1tone 0.9mW


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PDF TB203 LP801 28Vdc 17dBm
2011 - Not Available

Abstract: No abstract text available
Text: IDD 20 16 12 8 f= 764MHz , VDD=12.5V, VGG=5V 50 40 30 20 10 0 -15 -10 20 16 12 IDD f , CURRENT versus DRAIN VOLTAGE 80 OUTPUT POWER P out(W) DRAIN CURRENT IDD(A) 16 f= 764MHz , VGG=5V, Pin , ) DRAIN CURRENT IDD(A) 12 f= 764MHz , VDD=12.5V, Pin=50mW 12 DRAIN CURRENT IDD(A) f=806MHz, VDD


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PDF RA20H8087M 806-870MHz RA20H8087M 20-watt 870-MHz
1559MHz

Abstract: 0943D DEA252450BT-2080B 5104db 544db
Text: (Pass band) [DC to 76MHz] [76 to 108MHz] [480MHz] [746 to 764MHz ] [776 to 794MHz] [824 to 849MHz] [869


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PDF DEA252450BT-2080B2 DEA252450BT-2024C2 DEA252450BT-2024C5 DEA252400BT-2030A1 DEA252450BT-2024D4 DEA252450BT-2027A1 DEA252450BT-2031A1 DEA252450BT-2063C1 DEA252450BT-2109C3 DEA252450BT-2037C1 1559MHz 0943D DEA252450BT-2080B 5104db 544db
2010 - RA45H7687M1

Abstract: RA45H7687M1-101
Text: =806MHz V GG1=3.4V V GG2=5V Pin=50m W 20 16 Pout 50 2 18 30 f= 764MHz V GG1 , DRAIN CURRENT I DD (A) I DD 10 8 f= 764MHz V DD=12.8V V GG1=3.4V V GG2=5V 24 Pout , 10 Pout (dBm ) 40 8 30 6 10 4 f= 764MHz V DD=12.8V V GG1=3.4V Pin=50m W , ) GATE VOLTAGE VGG2 (V) 60 40 5 12 f= 764MHz V DD=12.8V V GG1=3.4V Pin=2dBm 50 5


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PDF RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz RA45H7687M1-101
RA45H7687M1

Abstract: RA45H8994M1 AN-900-027-B
Text: 0 -10 Ph. Freq.: 764MHz -20 30 Gain 20 0 -10 Ph. Freq.: 785MHz -20 , [dB]Relative Phase [deg] 40 Gain 20 10 0 -10 Ph. Freq.: 764MHz -20 30 Gain , .: 764MHz -20 Gain 20 No.1 10 No.2 No.3 0 -10 Ph. Freq.: 785MHz -20 Ph. No , difference among individuals [deg] 0 -10 -20 -30 Lot No: 06XXA -40 Freq.: 764MHz 0


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PDF AN-900-027-B RA45H8994M1 RA45H7687M1 RA45H8994M1/7687M1 50ohm, 06XXA 835MHz RA45H7687M1 AN-900-027-B
mitsubishi Lot No

Abstract: AN-900-027 RA45H7687M1 RA45H8994M1 MITSUBISHI APPLICATION NOTE RF POWER
Text: ]Relative Phase [deg] Gain [dB]Relative Phase [deg] 30 20 10 0 -10 Ph. Freq.: 764MHz -20 , 20 10 0 -10 Ph. Freq.: 764MHz -20 30 Gain 20 No.1 No.2 No.3 No.1 10 No , .2 No.3 No.1 No.2 No.3 10 Gain 20 10 0 -10 Freq.: 764MHz -20 Gain 20 No , [deg] 0 -10 -20 -30 Lot No: 06XXA -40 Freq.: 764MHz 0 -10 No.1 No.1 No


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PDF AN-900-027 RA45H8994M1 RA45H7687M1 RA45H8994M1/7687M1 50ohm, 06XXA 835MHz mitsubishi Lot No AN-900-027 RA45H7687M1 MITSUBISHI APPLICATION NOTE RF POWER
2011 - BAND PASS FILTER

Abstract: RFBPF
Text: Insertion Loss VSWR Impedance 2450± 50 MHz 2.5 dB max 2.0 max 50 25@ 746~ 764MHz 30@ 824~ 849MHz 26@ 869


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PDF RFBPF2012040AHT RFBPF2012040AHT 11b/g/n, BAND PASS FILTER RFBPF
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